DG411LAZ/883 [VISHAY]
IC QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CQCC20, LCC-20, Multiplexer or Switch;
| 型号： | DG411LAZ/883 |
| 厂家： | 
VISHAY |
| 描述： | IC QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CQCC20, LCC-20, Multiplexer or Switch |
| 文件： | 总10页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG411L/412L/413L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D 2.7- thru 12-V Single Supply or
D Widest Dynamic Range
D Precision Automatic Test Equipment
D Precision Data Acquisition
"3- thru "6-Dual Supply
D Low Signal Errors and Distortion
D On-Resistance—rDS(on): 17
D Fast Switching—tON: 19 ns
ꢀ
D Break-Before-Make Switching Action D Communication Systems
D Simple Interfacing
D Battery Powered Systems
D Computer Peripherals
D SDSL, DSLAM
—tOFF: 12 ns
D TTL, CMOS Compatible
D Low Leakage: 0.25 nA
D 2000-V ESD Protection
D Audio and Video Signal Routing
DESCRIPTION
The DG411L/412L/413L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG411/412/413 with improved performance
Combining high speed (tON: 19 ns), flat rDS(on) over the analog
signal range (5 ꢀ ), minimal insertion lose (-3 dB at 280 MHz),
and excellent crosstalk and off-isolation performance (-50 dB
at 50 MHz), the DG411L/412L/413L are ideally suited for audio
and video signal switching.
Using BiCMOS wafer fabrication technology allows the
DG411L/412L/413L to operate on single and dual supplies.
Single supply voltage ranges from 3 to 12 V while dual supply
operation is recommended with "3 to "6 V.
The DG411L and DG412L respond to opposite control logic as
shown in the Truth Table. The DG413L has two normally open
and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411L/412L
Dual-In-Line, TSSOP and SOIC
IN
D
IN
D
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
2
1
1
1
2
TRUTH TABLE
S
S
2
Logic
DG411L
DG412L
V+
V-
0
1
ON
OFF
ON
V
L
OFF
GND
Logic “0” v 0.8 V
Logic “1” w 2.4 V
S
3
S
4
D
4
D
3
IN
4
IN
3
Top View
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
1
DG411L/412L/413L
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413L
Dual-In-Line, TSSOP and SOIC
IN
D
1
2
3
4
5
6
7
8
16 IN
2
1
1
1
TRUTH TABLE
D
2
15
14
13
12
11
10
9
Logic SW1, SW4
SW2, SW3
S
S
2
0
1
OFF
ON
ON
V-
V+
OFF
GND
V
L
Logic “0” v 0.8 V
Logic “1” w 2.4 V
S
4
S
3
D
D
3
4
4
IN
IN
3
Top View
ORDERING INFORMATION
Temp Range
DG411L/412L
Package
Part Number
DG411LDY
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin CerDIP
LCC-20
DG412LDY
DG411LDQ
-40 to 85_C
DG412LDQ
DG411LAK, DG411LAK/883
DG412LAK, DG412LAK/883
DG411LAZ/883
-55 to 125_C
DG412LAZ/883
DG413L
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin CerDIP
LCC-20
DG413LDY
DG413LDQ
-40 to 85_C
DG413LAK, DG413LAK/883
DG413LAZ/883
-55 to 125_C
ABSOLUTE MAXIMUM RATINGS
b
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Power Dissipation (Package)
c
16-Pin TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
d
16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
V
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V
L
e
16-Pin CerDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
a
, V , V . . . . . . . . . . -0.3 to (V+ +0.3 V) or 30 mA, whichever occurs first
N
S
D
Notes:
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal
X
X
X
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7 mW/_C above 75_C
Storage Temperature
(DQ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C
(AK Suffix) . . . . . . . . . . . . . . . . . . . -65 to 150_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
2
DG411L/412L/413L
Vishay Siliconix
a
SPECIFICATIONS (SINGLE SUPPLY 12 V)
Test Conditions
Unless Specified
A Suffix Limits D Suffix Limits
-55 to 125_C
-40 to 85_C
V+ = 12 V, V- = 0 V
f
Typc
Parameter
Symbol
Tempb
Mind
Maxd
Mind
Maxd
Unit
V
= 5 V, V = 2.4 V, 0.8 V
L
IN
Analog Switch
e
Analog Signal Range
V
Full
0
12
0
12
V
ANALOG
Drain-Source
On-Resistance
V+ = 10.8 V, V- = 0 V
I = 10 mA, V = 2/9 V
S D
Room
Full
20
30
45
30
40
r
ꢀ
DS(on)
Room
Full
-1
-15
1
15
-1
-10
1
10
I
I
S(off)
Switch Off
Leakage Current
V
= 1/11 V, V = 11/1 V
S
D
Room
Full
-1
-15
1
15
-1
-10
1
10
nA
ꢁA
ns
D(off)
D(on)
Channel On
Leakage Current
Room
Full
-1
-15
1
15
-1
-10
1
10
I
V = V = 11/1 V
S D
Digital Control
Input Current, V Low
I
V
Under Test = 0.8 V
Under Test = 2.4 V
Full
Full
0.01
-1.5
-1.5
1.5
1.5
-1
-1
1
1
IN
IL
IN
IN
Input Current, V High
I
IH
V
IN
Dynamic Characteristics
Room
Full
20
12
50
70
50
60
Turn-On Time
Turn-Off Time
t
ON
R
L
= 300 ꢀ , C = 35 pF
L
= 5 V See Figure 2
V
S
Room
Full
30
48
30
40
t
OFF
Break-Before-Make
Time Delay
DG413L Only, V = 5 V
S
t
D
Room
6
R
L
= 300 ꢀ , C = 35 pF
L
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 10 nF
Room
Room
5
pC
dB
g
g
L
e
Off Isolation
OIRR
71
R
L
= 50 ꢀ , C = 5 pF,
f = 1 MHz
L
Channel-to-Channel
X
Room
95
TALK
e
Crosstalk
Source Off Capaci-
tance
C
S(off)
C
D(off)
C
D(on)
Room
Room
Room
5
6
e
e
Drain Off Capacitance
f = 1 MHz
pF
Channel On Capaci-
15
e
tance
Power Supplies
Room
Full
0.02
1
7.5
1
5
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
Room
Full
-0.002
0.002
-0.002
-1
-7.5
-1
-5
V
= 0 or 5 V
ꢁ
A
IN
Room
Full
1
7.5
1
5
I
L
Room
Full
-1
-7.5
-1
-5
I
GND
a
SPECIFICATIONS (DUAL SUPPLY "5 V)
Test Conditions
Unless Specified
A Suffix Limits D Suffix Limits
-55 to 150_C
-40 to 85_C
V+ = 5 V, V- = -5 V
f
Typc
Parameter
Symbol
Tempb
Mind
Maxd
Mind
Maxd
Unit
V
= 5 V, V = 2.4 V, 0.8 V
L
IN
Analog Switch
e
Analog Signal Range
V
Full
-5
5
-5
5
V
ANALOG
Drain-Source
On-Resistance
V+ = 5 V, V- = -5 V
I = 10 mA, V = "3.5 V
S D
Room
Full
20
33
45
33
40
r
ꢀ
DS(on)
Room
Full
-1
-15
1
15
-1
-10
1
10
I
I
S(off)
Switch Off
Leakage Current
V+ = 5.5 V, V- = -5.5 V
V = "4.5 V, V = #4.5 V
D
g
Room
Full
-1
-15
1
15
-1
-10
1
10
S
nA
D(off)
D(on)
Channel On
Leakage Current
V+ = 5.5 V, V- = -5.5 V
= V = "4.5 V
Room
Full
-1
-15
1
15
-1
-10
1
10
I
g
V
S
D
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
3
DG411L/412L/413L
Vishay Siliconix
a
SPECIFICATIONS (DUAL SUPPLY "5 V)
Test Conditions
Unless Specified
A Suffix Limits D Suffix Limits
-55 to 150_C
-40 to 85_C
V+ = 5 V, V- = -5 V
f
Typc
Parameter
Symbol
Tempb
Mind
Maxd
Mind
Maxd
Unit
V
= 5 V, V = 2.4 V, 0.8 V
L
IN
Digital Control
e
Input Current, V Low
I
V
Under Test = 0.8 V
Under Test = 2.4 V
Full
Full
0.05
0.05
-1.5
-1.5
1.5
1.5
-1
-1
1
1
IN
IL
IN
IN
ꢁA
e
Input Current, V High
I
IH
V
IN
Dynamic Characteristics
Room
Full
21
16
50
75
50
60
e
Turn-On Time
t
ON
R
= 300 ꢀ , C = 35 pF
L
= "3.5 V See Figure 2
L
V
S
Room
Full
35
50
35
40
e
Turn-Off Time
t
ns
OFF
Break-Before-Make
Time Delay
DG413L Only, V = 3.5 V
S
R = 300 ꢀ , C = 35 pF
L L
t
D
Room
6
e
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 10 nF
Room
Room
5
pC
dB
g
g
L
e
Off Isolation
OIRR
68
R
L
= 50 ꢀ , C = 5 pF,
f = 1 MHz
L
Channel-to-Channel
X
Room
85
TALK
e
Crosstalk
Source Off
Capacitance
C
S(off)
C
D(off)
C
D(on)
Room
Room
Room
9
9
e
e
Drain Off Capacitance
f = 1 MHz
pF
Channel On
Capacitance
20
e
Power Supplies
Room
Full
0.03
1
7.5
1
5
e
Positive Supply Current
I+
I-
Negative Supply
Room
Full
-0.002
0.002
-0.002
-1
-7.5
-1
-5
e
Current
V
= 0 or 5 V
ꢁ
A
IN
Room
Full
1
7.5
1
5
e
Logic Supply Current
I
L
Room
Full
-1
-7.5
-1
-5
e
Ground Current
I
GND
a
SPECIFICATIONS (SINGLE SUPPLY 5 V)
Test Conditions
Unless Specified
A Suffix Limits D Suffix Limits
-55 to 150_C
-40 to 85_C
V+ = 5 V, V- = 0 V
f
Typc
Parameter
Symbol
Tempb
Mind
Maxd
Mind
Maxd
Unit
V
= 5 V, V = 2.4 V, 0.8 V
L
IN
Analog Switch
e
Analog Signal Range
V
Full
5
5
V
ANALOG
Drain-Source
On-Resistance
V+ = 4.5 V, I = 5 mA
V = 1 V, 3.5 V
D
Room
Full
35
50
88
50
75
S
r
ꢀ
DS(on)
e
Dynamic Characteristics
Room
Hot
27
15
50
90
50
60
e
Turn-On Time
t
ON
R
= 300 ꢀ , C = 35 pF
= 3.5 V, See Figure 2
L
L
V
S
Room
Hot
30
55
30
40
e
Turn-Off Time
t
ns
OFF
Break-Before-Make
Time Delay
DG413L Only, V = 3.5 V,
S
R = 300 ꢀ , C = 35 pF
L L
t
Room
Room
6
D
e
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 10 nF
0.5
pC
g
g
L
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
4
DG411L/412L/413L
Vishay Siliconix
a
SPECIFICATIONS (SINGLE SUPPLY 5 V)
Test Conditions
Unless Specified
A Suffix Limits D Suffix Limits
-55 to 150_C
-40 to 85_C
V+ = 5 V, V- = 0 V
f
Typc
Parameter
Symbol
Tempb
Mind
Maxd
Mind
Maxd
Unit
V
= 5 V, V = 2.4 V, 0.8 V
L
IN
Power Supplies
Room
Hot
0.02
1
7.5
1
5
e
Positive Supply Current
I+
I-
Room
Hot
-0.002
0.002
-0.002
-1
-7.5
-1
-5
e
Negative Supply Current
V
IN
= 0 or 5 V
ꢁ
A
Room
Hot
1
7.5
1
5
e
Logic Supply Current
I
L
Room
Hot
-1
-7.5
-1
-5
e
Ground Current
I
GND
a
SPECIFICATIONS (SINGLE SUPPLY 3 V)
Test Conditions
Unless Specified
A Suffix Limits
Limits
-40 to 85_C
-55 to 150_C
V+ = 3 V, V- = 0 V
f
Typc
Parameter
Symbol
Tempb
Mind
Maxd
Mind
Maxd
Unit
V
= 3 V, V = 0.4 V
IN
L
Analog Switch
e
Analog Signal Range
V
Full
0
3
0
3
V
ANALOG
Drain-Source
On-Resistance
V+ = 2.7 V, V- = 0 V
Room
Full
65
80
115
80
100
r
ꢀ
DS(on)
I
S
= 5 mA, V = 0.5, 2.2 V
D
Room
Full
-1
-15
1
15
-1
-10
1
10
I
S(off)
Switch Off
Leakage Current
V+ = 3.3 V, V- = 0 V
V = 1, 2 V, V = 2, 1 V
D S
g
Room
Full
-1
-15
1
15
-1
-10
1
10
I
nA
D(off)
D(on)
Channel On
Leakage Current
V+ = 3.3 V, V- = 0 V
= V = 1, 2 V
Room
Full
-1
-15
1
15
-1
-10
1
10
I
g
V
S
D
Digital Control
Input Current, V Low
I
V
Under Test = 0.4 V
Under Test = 2.4 V
Full
Full
0.005
0.005
-1.5
-1.5
1.5
1.5
-1
-1
1
1
IN
IL
IN
IN
ꢁ
A
Input Current, V High
I
IH
V
IN
Dynamic Characteristics
Room
Full
50
30
85
150
85
110
Turn-On Time
Turn-Off Time
t
ON
R
= 300 ꢀ , C = 35 pF
= 1.5 V See Figure 2
L
L
V
Room
Full
60
100
60
85
S
t
ns
OFF
Break-Before-Make
Time Delay
DG413L Only, V = 1.5 V
S
t
D
Room
6
R
L
= 300 ꢀ , C = 35 pF
L
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 10 nF
Room
Room
1
pC
dB
g
g
L
e
Off Isolation
OIRR
68
R
L
= 50 ꢀ , C = 5 pF,
f = 1 MHz
L
Channel-to-Channel
X
Room
85
TALK
e
Crosstalk
Source Off
Capacitance
C
S(off)
C
D(off)
C
D(on)
Room
Room
Room
6
6
e
e
Drain Off Capacitance
f = 1 MHz
pF
Channel On
Capacitance
20
e
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
= input voltage to perform proper function.
IN
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
5
DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. Drain Voltage
(Single Supply)
r
vs. Drain Voltage and Temperature
(Single Supply)
DS(on)
DS(on)
100
80
60
40
20
0
50
40
30
20
10
0
V+ = 5 V
V- = 0 V
A
B
C
V
= 2.7 V
CC
D
V
= 4.5 V
CC
A=125_C
B= 85_C
E
V
= 12 V
CC
C= 25_C
D= -40_C
E= -55_C
0
3
6
Drain Voltage (V)
9
12
0
1
2
3
4
5
Drain Voltage (V)
r
vs. Drain Voltage and Temperature
(Dual Supply)
DS(on)
Supply Current vs. Temperature
35
28
21
14
7
0.30
0.25
0.20
0.15
0.10
0.05
0.00
V+ = 5 V
V- = 0 V
V" = "5 V
A
B
C
D
E
A=125_C
B= 85_C
C= 25_C
D= -40_C
E= -55_C
0
-5
-3
-1
1
3
5
-50
-25
0
25
50
75
100 125 150
Drain Voltage (V)
Temperature (_C)
Leakage Current vs. Analog Voltage
(Dual Supply)
Switching Time vs. Single Supply
30
20
50
V+ = 5 V
V- = -5 V
40
30
20
10
0
t
ON
10
I
D(on)
0
I
D(off)
t
OFF
I
S(off)
-10
-20
-30
-5
-3
-1
1
3
5
0
3
6
9
12
15
V
or V - Drain-Source Voltage
V+ - Positive Supply Voltage (V)
D
S
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
6
DG411L/412L/413L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Dual Supply
Charge Injection vs. Drain Voltage
45
6
4
36
V
= "5 V
SUPPLY
t
ON
t
OFF
27
18
9
2
V
= 3 V
SUPPLY
0
0
-2
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-5
-3
-1
1
3
5
V" Positive Supply Voltage (V)
Drain Voltage (V)
Drain Capacitance vs. Drain Voltage
(Single Supply)
Input Threshold vs. Single Supply Voltage
1.8
1.5
1.2
0.9
0.6
0.3
0.0
7
6
5
4
3
2
1
0
C
D(off)
@ V = 5 V
CC
C
D(off)
@ V = 12 V
CC
C
D(off)
@ V = 3 V
CC
0
2
4
6
8
10
12
14
0
3
6
9
12
V" Positive Supply Voltage (V)
V
- Drain Voltage (V)
D
Capacitance vs. Analog Signal
(Dual Supply)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
25
20
15
10
5
10
V
= "5 V
SUPPLY
C
D(on)
-10
V+ = 3 V
V- = 0 V
Insertion Loss
-3 dB = 280 MHz
R
L
= 50 ꢀ
-30
-50
-70
Off Isolation
Crosstalk
C /C
S
D(off)
-90
0
-110
-5
-3
-1
1
3
5
0.1
1
10
Frequency (MHz)
100
1000
Analog Voltage (V)
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
7
DG411L/412L/413L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V
L
V-
Level
Shift/
Drive
V
IN
V+
GND
V-
D
FIGURE 1.
TEST CIRCUITS
t <20 ns
r
t <20 ns
f
V
L
V+
V+
3 V
0 V
Logic
Input
50%
V
L
t
ON
S
D
Switch
Input*
V
S
V
O
V
S
V
O
90%
IN
GND
R
300
C
L
35 pF
L
ꢀ
0 V
V-
V-
Switch
Output
t
ON
90%
V
O
S
Switch
Input*
-V
C
L
(includes fixture and stray capacitance)
R
L
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
V
= V
S
O
R
L
+ r
DS(on)
FIGURE 2. Switching Time
V
V+
L
3 V
0 V
Logic
Input
50%
S
D
D
1
1
V
V
S1
S2
V
O1
V
S1
O1
IN
S
V
1
90%
V
O2
2
2
Switch
Output
0 V
V
S2
IN
2
R
300
L1
C
L1
35 pF
V
90%
O2
ꢀ
V-
V-
GND
R
300
L2
C
L2
35 pF
0 V
Switch
Output
t
D
t
D
ꢀ
C
L
(includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make (DG413L)
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
8
DG411L/412L/413L
Vishay Siliconix
TEST CIRCUITS
ꢂ V
O
V
V
V+
V+
L
L
V
O
X
IN
R
g
S
D
OFF
OFF
ON
ON
OFF
OFF
V
O
IN
GND
C
10 nF
V
g
L
3 V
V-
V-
IN
X
Q = ꢂ V x C
O
L
IN dependent on switch configuration Input polarity determined
X
by sense of switch.
FIGURE 4. Charge Injection
V
V
V+
L
L
C
C
V+
S
D
1
V
1
S
R
g
= 50
ꢀ
50
ꢀ
IN
1
0V, 2.4 V
S
D
2
2
V
NC
O
R
L
IN
2
0V, 2.4 V
GND
V-
V-
C
V
V
S
X
Isolation = 20 log
TALK
O
C = RF bypass
FIGURE 5. Crosstalk
V
V
L
L
V+
V+
C
C
V
V
L
L
V+
V+
C
C
V
O
S
D
V
S
R
g
= 50
ꢀ
S
D
R
50
L
IN
ꢀ
0V, 2.4 V
Meter
IN
HP4192A
Impedance
Analyzer
GND
V-
V-
C
0 V, 2.4 V
or Equivalent
GND
V-
V-
C
V
V
S
Off Isolation = 20 log
C = RF Bypass
O
FIGURE 6. Off Isolation
FIGURE 7. Source/Drain Capacitances
Document Number: 71397
S-03251—Rev. D, 17-Mar-03
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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