DG189 [VISHAY]
High-Speed Drivers with Dual SPDT JFET Switches; 与双SPDT开关JFET高速驱动器
| 型号： | DG189 |
| 厂家： | 
VISHAY |
| 描述： | High-Speed Drivers with Dual SPDT JFET Switches |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG189/190/191
Vishay Siliconix
High-Speed Drivers with Dual SPDT JFET Switches
Constant On-Resistance Over
Entire Analog Range
Low Leakage
Low Crosstalk
Rad Hardness
Low Distortion
Eliminates Large Signal Errors
High Precision
High Bandwidth Capability
Fault Protection
Audio Switching
Video Switching
Sample/Hold
Guidance and Control Systems
Aerospace
The DG189/190/191 are precision dual single-pole,
double-throw (SPDT) analog switches designed to provide
accurate switching of video and audio signals. This series is
To achieve fast and accurate switch performance, each device
comprises four n-channel JFET transistors and a TTL
compatible bipolar driver. The driver is designed to achieve
break-before-make switching action, eliminating the
inadvertent shorting between channels and the crosstalk
which would result. In the on state, each switch conducts
current equally well in either direction. In the off condition, the
switches will block up to 20 V peak-to-peak, with feedthrough
of less than –60 dB at 10 MHz.
ideally suited for applications requiring
on-resistance over the entire analog range.
a
constant
The major difference in the devices is the on-resistance
(DG189—10 , DG190—30 , DG191—75 Reduced
errors are achieved through low leakage current (ID(on)
< 2 nA). Applications which benefit from the flat JFET
on-resistance include audio switching, video switching, and
data acquisition.
Dual-In-Line
Flat Package
D
S
1
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
14
13
12
11
10
9
S
D
S
3
4
4
2
2
2
NC
IN
1
D
D
S
3
1
D
3
V–
D
S
S
3
V
R
1
IN
IN
1
S
D
V
L
4
V+
V–*
V+
IN
4
8
V
L
V
R
NC
2
Top View
D
2
S
2
Refer to JAN38510 Information, Military Section
*Common to Substrate and Case
Top View
Logic
SW1, SW2
SW3, SW4
0
1
OFF
ON
ON
OFF
Logic “0”
0.8 V
Logic “1” w 2.4 V
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-1
DG189/190/191
Vishay Siliconix
Temp Range
Package
Part Number
DG189BP
DG190BP
DG191BP
–25 to 85 C
16-Pin Sidebraze
DG189AP/883, 5962-9068901MEA
DG190AP/883, JM38510/11107BEA
DG191AP/883, JM38510/11108BEA
JM38510/11107BXA
16-Pin Sidebraze
14-Pin Flat Pack
–55 to 125 C
JM38510/11108BXA
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
V+ to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V
Current (S or D) DG190, DG191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150 C
D
V , V to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 to 33 V
S
D
L
D
V
V
V
V
V
V
V
to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "22 V
D
a
Power Dissipation
to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
b
16-Pin Sidebraze . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
L
IN
c
14-Pin Flat Pack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
L
R
to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V
R
IN
R
R
Notes:
to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V
a. All leads welded or soldered to PC Board.
b. Derate 12 mW/ C above 75 C
c. Derate 10 mW/ C above 75 C
to V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V
IN
Current (S or D) DG189 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
V
L
V+
S
D
IN
V
R
V–
FIGURE 1.
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-2
DG189/190/191
Vishay Siliconix
A Suffix
–55 to 125 C
B Suffix
–25 to 85 C
Test Conditions
Unless Specified
V+ = 15 V, V– = –15 V, V = 5 V
L
Tempb
Typc
Mind Maxd Mind Maxd Unit
f
Parameter
Symbol
V
R
= 0 V, V = 0.8 V or 2 V
IN
Analog Switch
e
Analog Signal Range
V
Full
–7.5
15
–7.5
15
V
ANALOG
Drain-Source
On-Resistance
Room
Full
7.5
10
20
15
25
r
I = –10 mA, V = –7.5 V
S D
DS(on)
V
= "10 V, V = #10 V
Room
Hot
0.05
0.05
0.04
0.03
–0.1
300
10
1000
15
300
S
D
V+ = 10 V, V– = –20 V
Source Off
Leakage Current
I
S(off)
Room
Hot
10
1000
15
300
V
S
= "7.5 V, V = #7.5 V
D
V
S
= "10 V, V = #10 V
Room
Hot
10
1000
15
300
D
nA
V+ = 10 V, V– = –20 V
Drain Off
Leakage Current
I
I
D(off)
Room
Hot
10
1000
15
300
V
S
= "7.5 V, V = #7.5 V
D
Channel On
Leakage Current
Room
Hot
–2
–200
–10
–200
V
D
= V = "7.5 V
D(on)
S
Saturation Drain Current
I
2 ms Pulse Duration
Room
mA
DSS
Digital Input
Input Current with
Input Voltage High
Room
Hot
<0.01
–30
10
20
10
20
I
V
V
= 5 V
= 0 V
INH
IN
A
Input Current with
Input Voltage Low
I
Full
–250
–250
INL
IN
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
Room
Room
Room
Room
Room
Room
240
140
21
400
200
425
225
on
See Switching Time Test Circuit
ns
t
off
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
C
C
C
V
V
= –5 V, I = 0
D
S(off)
D(off)
D(on)
S
f = 1 MHz
= –5 V, I = 0
17
pF
dB
D
S
V
D
= V = 0 V
17
S
OIRR
f = 1 MHz, R = 75
>55
L
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
I–
Room
Room
Room
Room
0.6
–2.7
3.1
–1
1.5
4.5
1.5
4.5
–5
–2
–5
–2
V
IN
= 0 V, or 5 V
mA
I
L
Reference Supply Current
I
R
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-3
DG189/190/191
Vishay Siliconix
Test Conditions
Unless Specified
A Suffix
–55 to 125 C
B Suffix
–25 to 85 C
V+ = 15 V, V– = –15 V, V = 5 V
L
Tempb
Typc
Mind Maxd Mind Maxd Unit
f
Parameter
Symbol
V
R
= 0 V, V = 0.8 V or 2 V
IN
Analog Switch
e
Analog Signal Range
V
Full
–7.5
15
–7.5
15
V
ANALOG
Drain-Source
On-Resistance
Room
Full
18
0.06
0.1
30
60
50
75
r
I
= –10 mA, V = –7.5 V
DS(on)
S D
V
= "10 V, V = #10 V
Room
Hot
1
100
5
100
S
D
V+ = 10 V, V– = –20 V
Source Off
Leakage Current
I
S(off)
Room
Hot
1
100
5
100
V
= "7.5 V, V = #7.5 V
S
D
V
= "10 V, V = #10 V
Room
Hot
0.05
0.06
–0.02
1
100
5
100
S
D
nA
V+ = 10 V, V– = –20 V
Drain Off
Leakage Current
I
I
D(off)
Room
Hot
1
100
5
100
V
S
= "7.5 V, V = #7.5 V
D
Channel On
Leakage Current
Room
Hot
–2
–200
–10
–200
V
D
= V = "7.5 V
D(on)
S
Digital Input
Input Current with
Input Voltage High
Room
Hot
<0.01
–30
10
20
10
20
I
V
V
= 5 V
= 0 V
INH
IN
A
Input Current with
Input Voltage Low
I
Full
–250
–250
INL
IN
Dynamic Characteristics
Turn-On Time
t
Room
Room
Room
Room
Room
Room
85
95
9
150
130
180
150
on
See Switching Time Test Circuit
ns
Turn-Off Time
t
off
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
C
C
C
V
V
= –5 V, I = 0
D
S(off)
D(off)
D(on)
S
= –5 V, I = 0
S
6
f = 1 MHz
pF
dB
D
V
D
= V = 0 V
14
>50
S
OIRR
f = 1 MHz, R = 75
L
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
I–
Room
Room
Room
Room
0.6
–2.7
3.1
–1
1.5
4.5
1.5
4.5
–5
–2
–5
–2
V
IN
= 0 V, or 5 V
mA
I
L
Reference Supply Current
I
R
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-4
DG189/190/191
Vishay Siliconix
Test Conditions
Unless Specified
A Suffix
–55 to 125 C
B Suffix
–25 to 85 C
V+ = 15 V, V– = –15 V, V = 5 V
L
Tempb
Typc
Mind Maxd Mind Maxd Unit
f
Parameter
Symbol
V
R
= 0 V, V = 0.8 V or 2 V
IN
Analog Switch
e
Analog Signal Range
V
Full
–10
15
–10
15
V
ANALOG
Drain-Source
On-Resistance
Room
Full
35
75
150
100
150
r
I = –10 mA, V = –7.5 V
S D
DS(on)
V
= "10 V, V = #10 V
Room
Hot
0.05
0.07
0.04
0.05
–0.03
1
100
5
100
S
D
V+ = 10 V, V– = –20 V
Source Off
Leakage Current
I
S(off)
Room
Hot
1
100
5
100
V
V
= "10 V, V = #10 V
S
D
= "10 V, V = #10 V
Room
Hot
1
100
5
100
S
D
nA
V+ = 10 V, V– = –20 V
Drain Off
Leakage Current
I
I
D(off)
Room
Hot
1
100
5
100
V
S
= "10 V, V = #10 V
D
Channel On
Leakage Current
Room
Hot
–2
–200
–10
–200
V
D
= V = "10 V
D(on)
S
Digital Input
Input Current with
Input Voltage High
Room
Hot
<0.01
–30
10
20
10
20
I
V
V
= 5 V
= 0 V
INH
IN
A
Input Current with
Input Voltage Low
I
Full
–250
–250
INL
IN
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
Room
Room
Room
Room
Room
Room
120
100
9
250
130
300
150
on
See Switching Time Test Circuit
ns
t
off
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
C
C
C
V
V
= –5 V, I = 0
D
S(off)
D(off)
D(on)
S
f = 1 MHz
= –5 V, I = 0
6
pF
dB
D
S
V
D
= V = 0 V
14
>50
S
OIRR
f = 1 MHz, R = 75
L
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
I–
Room
Room
Room
Room
0.6
–2.7
3.1
–1
1.5
4.5
1.5
4.5
–5
–2
–5
–2
V
IN
= 0 V, or 5 V
mA
I
L
Reference Supply Current
I
R
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-5
DG189/190/191
Vishay Siliconix
Supply Current vs. Temperature
I
vs. V and Temperature
IN IN
5
4
3
2
100
80
V
V
= 0
= 5 V
INL
INH
–I
INL
I
L
60
–I–
40
–I
R
1
0
20
0
I+
I
INH
–55 –35 –15
5
25
45
65
85 105 125
–55 –35 –15
5
25
45
65 85
105 125
Temperature ( C)
Temperature ( C)
r
vs. Temperature
Switching Time vs. V and Temperature (DG189)
D
230
DS(on)
100
V
V
= 7.5 V
DG191
D
210
t
= –7.5 V
ON
D
190
170
DG190
DG189
10
t
OFF
150
130
V = –7.5 V
D
I
S
= –10 mA
110
90
1
–50 –25
0
25
50
75
100 125
–55 –35 –15
5
25
45
65
85 105 125
Temperature ( C)
Temperature ( C)
Leakage vs. Temperature (DG189)
Switching Time vs. V and Temperature (DG190/191)
D
100
10
1
130
V+ = 10 V
V– = –20 V
= 5 V
= 0
V
V
= 7.5 V
120
110
100
90
D
V
V
L
R
= –7.5 V
D
t
ON
t
OFF
I
S(off)
80
70
I
D(on)
I
D(off)
60
50
0.1
25
45
65
85
105
125
–55 –35 –15
5
25
45
65
85 105 125
Temperature ( C)
Temperature ( C)
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-6
DG189/190/191
Vishay Siliconix
I
vs. Temperature (DG190/191)
Capacitance vs. V or V (DG189)
D(off)
D
S
30
26
100
10
f = 1 MHz
V+ = 10 V, V– = –20 V
= –10 V, V = 10 V
V
D
S
C
S(off)
22
18
14
10
C
D(on)
B Suffix
1
A Suffix
C
D(off)
0.1
25
45
65
85
105
125
–8
–4
0
4
8
Temperature ( C)
V
D
or V – Drain or Source Voltage (V)
S
Capacitance vs. V or V (DG190/191)
Off Isolation vs. Frequency
D
S
20
18
16
14
12
10
8
100
90
80
70
60
50
40
30
20
10
0
V
V
= 0.8 V
= 2 V
INL
INH
f = 1 MHz
C
D(on)
DG190/191
DG189
C
C
S(off)
V+ = 15 V, V– = –15 V
6
D(off)
V
= 0, V = 5 V
R
L
L
R
V
= 75
4
w 220 mV
Capacitance is measured from test terminal
to common.
IN
RMS
2
0
5
6
7
8
10
10
10
f – Frequency (Hz)
10
–10 –8 –6 –4 –2
0
2
4
6
8
10
V
D
or V – Drain or Source Voltage (V)
S
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-7
DG189/190/191
Vishay Siliconix
Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform.
+5 V
+15 V
t
: V = 3 V
S
t <10 ns
r
t <10 ns
f
ON
t
: V = –3 V
3 V
0 V
OFF
S
Logic
Input
V
L
V+
50%
S
S
D
D
1
1
V
V
S1
V
O
3
3
S2
3 V
0 V
C
R
L
1 k
L
90%
100 pF
IN
V
V–
R
t
t
OFF
ON
Switch
Output
0 V
–15 V
90%
–3 V
C
L
(includes fixture and stray capacitance)
R
L
V
+ V
x
R
S
) r
OUT
L
DS(on)
FIGURE 2. Switching Time
VIN
Logic Input
Voltage
V–
VR
VS
Negative
Supply
Voltage
(V)
Reference
Supply
Voltage
(V)
Analog
Voltage
Range
(V)
V+
Positive
VL
Logic Supply
Voltage
(V)
VINH(min)/VINL(max
Supply Voltage
(V)
)
Switch
(V)
b
15
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–7.5 to 15
–12.5 to 10
–4.5 to 12
DG189
DG190
10
12
b
15
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–10 to 15
–15 to 10
–7 to 12
DG191
10
12
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
b. Electrical Parameter Chart based on V+ = 15 V, V = 5 V, V = GND
L
R
Document Number: 70034
S-52880—Rev. C, 28-Apr-97
www.vishay.com FaxBack 408-970-5600
4-8
相关型号：
DG189AP883B
IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, DIP16, SIDE BRAZED, DIP-16, Multiplexer or Switch
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