DF10SMA [VISHAY]
Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, PLASTIC, CASE DFM, 4 PIN;
| 型号： | DF10SMA |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, PLASTIC, CASE DFM, 4 PIN 整流二极管 桥式整流二极管 光电二极管 |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF005S thru DF10S
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• High surge current capability
~
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 250 °C
~
• Solder dip 260 °C, 40 s
~
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
~
Case Style DFS
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
PRIMARY CHARACTERISTICS
IF(AV)
1 A
MECHANICAL DATA
Case: DFS
VRRM
IFSM
IR
50 V to 1000 V
50 A
Epoxy meets UL 94V-0 flammability rating
5 µA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF
1.1 V
TJ max.
150 °C
Polarity: As marked on body
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL DF005S DF01S
DF02S
DF02S
200
DF04S
DF04S
400
DF06S
DF06S
600
DF08S
DF08S
800
DF10S
DF10S
1000
UNIT
Device marking code
DF005S DF01S
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
V
V
V
140
280
420
560
700
Maximum DC blocking voltage
100
200
400
600
800
1000
Maximum average forward output rectified
current at TA = 40 °C (1)
IF(AV)
1.0
A
Peak forward surge current single half
sine-wave superimposed on rated load
IFSM
I2t
50
10
A
Rating for fusing (t < 8.3 ms)
A2s
°C
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
Document Number: 88573
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
DF005S thru DF10S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A
VF
1.1
V
Maximum DC reverse
current at rated DC blocking
voltage per diode
T
T
A = 25 °C
A = 125 °C
5.0
500
IR
µA
pF
Typical junction
CJ
25
capacitance per diode (1)
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
RθJA
RθJL
40
15
Typical thermal resistance (1)
°C/W
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
DF06S-E3/45
0.399
45
77
50
Tube
DF06S-E3/77
0.399
1500
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.0
60
50
40
30
20
10
0
TJ = 150 °C
Single Sine-Wave
60 Hz
Resistive or
Inductive Load
0.5
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
1.0 Cycle
0
20
40
60
80
140
160
100
120
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88573
Revision: 30-Jan-08
DF005S thru DF10S
Vishay General Semiconductor
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
TJ = 125 °C
10
1
1
0.1
TJ = 50 °C
40
0.1
0.01
0.01
20
80
0.1
1
10
100
0
60
100
t - Heating Time (s)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFS
Mounting Pad Layout
0.205 (5.2)
0.195 (5.0)
0.047 (1.20)
0.040 (1.02)
0.047 MIN.
(1.20 MIN.)
0.404 MAX.
(10.26 MAX.)
0.060 MIN.
(1.52 MIN.)
0.404 (10.3)
0.386 (9.80)
0.205 (5.2)
0.195 (5.0)
0.335 (8.51)
0.320 (8.13)
45°
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.009 (0.241)
0.130 (3.3)
0.120 (3.05)
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Document Number: 88573
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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