DF005M-E3/45 [VISHAY]
Diode Rectifier Bridge Single 50V 1A 4-Pin Case DFM Tube;型号: | DF005M-E3/45 |
厂家: | VISHAY |
描述: | Diode Rectifier Bridge Single 50V 1A 4-Pin Case DFM Tube 光电二极管 |
文件: | 总4页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
~
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
1 A
MECHANICAL DATA
IF(AV)
Case: DFM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM
IR
50 A
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 1.0 A
TJ max.
1.1 V
150 °C
Quad
Polarity: As marked on body
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Device marking code
DF005
50
DF01
100
70
DF02
200
DF04
400
DF06
600
DF08
800
DF10
1000
700
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
35
140
280
420
560
Maximum DC blocking voltage
50
100
200
400
600
800
1000
Maximum average forward output rectified current
at TA = 40 °C
IF(AV)
1.0
50
A
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
I2t
A
Rating for fusing (t < 8.3 ms)
10
A2s
°C
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A
VF
IR
1.1
V
Maximum reverse current at
rated DC blocking voltage per
diode
TA = 25 °C
5.0
μA
pF
TA = 125 °C
500
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
25
Revision: 16-Aug-13
Document Number: 88571
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005M
DF01M
DF02M
DF04M
DF06M
DF08M
DF10M
UNIT
RJA
RJL
40
(1)
Typical thermal resistance
°C/W
15
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
DF06M-E3/45
0.416
45
50
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
0.5
0
10
60 Hz
Resistive or
Inductive Load
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
P. C. B. M o unted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
0.01
0.4
0.6
0.8
20
40
60
80
100
120
140 150
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
60
50
40
30
20
10
0
100
TJ = 150 °C
Single Sine-Wave
10
TJ = 125 °C
1
0.1
TJ = 25 °C
40
1.0 Cycle
0.01
1
100
0
20
60
80
100
10
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Current Per Diode
Revision: 16-Aug-13
Document Number: 88571
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
100
10
1
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
0.01
100
1
10
100
1
10
0.1
t - Heating Time (s)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.013 (0.33)
0.0086 (0.22)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.350 (8.9)
0.300 (7.6)
0.205 (5.2)
0.195 (5.0)
0.075 (1.90)
0.055 (1.39)
Revision: 16-Aug-13
Document Number: 88571
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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