CNY75B [VISHAY]
Optocoupler with Phototransistor Output; 光电耦合器与光电晶体管输出
| 型号： | CNY75B |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Phototransistor Output |
| 文件： | 总10页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
B
6
C
5
E
4
Features
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110 / resp. IEC
60664)
1
2
3
• Climatic classification 55/100/21
(IEC 60068 part 1)
A (+) C (-) nc
• Special construction: Therefore, extra low cou-
pling capacity of typical 0.2 pF, high Common
Mode Rejection
V
D
E
• Low temperature coefficient of CTR
• CTR offered in 3 groups
Pb
e3
17186
Pb-free
• Rated isolation voltage (RMS includes DC)
For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, com-
puter peripheral interface, microprocessor sys-
tem interface.
V
= 600 V
(848 V peak)
IOWM
RMS
• Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
RMS
• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index: CTI
≥ 275
Description
• Thickness through insulation ≥ 0.75 mm
• Lead-free component
The CNY75A/ B/ C/ GA/ GB/ GC consists of a pho-
totransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-pin plastic dual inline
package.
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
The elements are mounted on one leadframe provid-
ing a fixed distance between input and output for high-
est safety requirements.
Agency Approvals
• UL1577, File No. E76222 System Code A, Double
Protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
• VDE related features:
Optocoupler for electrical safety requirements
• Rated impulse voltage (transient overvoltage)
IEC 60950/ EN 60950
V
= 6 kV peak
IOTM
• Isolation test voltage (partial discharge test volt-
Office machines (applied for reinforced isolation for mains voltage
≤
age) V = 1.6 kV
400 VRMS)
pd
VDE 0804
• FIMKO (SETI): EN 60950, Certificate No. 12399
Telecommunication apparatus and data processing
IEC 60065
Applications
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced iso-
lation):
Safety for mains-operated electronic and related house hold appa-
ratus
For appl. class I - IV at mains voltage ≤ 300 V
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
1
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
For additional information on the available options refer to
Option Information.
Order Information
Part
Remarks
CNY75A
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
CNY75B
CNY75C
CNY75GA
CNY75GB
CNY75GC
G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
5
Unit
V
Reverse voltage
Forward current
IF
IFSM
Pdiss
Tj
60
3
mA
A
Forward surge current
Power dissipation
Junction temperature
tp ≤ 10 µs
100
125
mW
°C
Output
Parameter
Test condition
Symbol
VCBO
Value
90
Unit
V
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
VCEO
VECO
IC
90
7
V
V
50
mA
mA
mW
°C
Collector peak current
Power dissipation
tp/T = 0.5, tp ≤ 10 ms
ICM
100
150
125
Pdiss
Tj
Junction temperature
Coupler
Parameter
Test condition
Symbol
VISO
Value
3750
Unit
AC isolation test voltage (RMS) t = 1 min
Total power dissipation
VRMS
Ptot
Tamb
Tstg
Tsld
250
mW
°C
Ambient temperature range
Storage temperature range
- 55 to + 100
- 55 to + 125
260
°C
Soldering temperature
2 mm from case, t ≤ 10 s
°C
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2
Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 50 mA
Symbol
VF
Min
Typ.
1.25
Max
1.6
Unit
V
Forward voltage
Reverse current
V
V
R = 6 V
R = 0, f = 1 MHz
IR
Cj
10
µA
Junction capacitance
50
pF
Output
Parameter
Test condition
Symbol
VCBO
Min
90
Typ.
Max
150
Unit
V
Collector base voltage
IC = 100 µA
Collector emitter voltage
Emitter collector voltage
IC = 1 mA
VCEO
VECO
ICEO
90
7
V
V
I
E = 100 µA
CE = 20 V, IF = 0
Collector-emitter leakage
current
V
nA
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
Max
0.3
Unit
V
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
Cut-off frequency
VCE = 5 V, IF = 10 mA,
fc
110
0.3
kHz
pF
RL = 100 Ω
Coupling capacitance
f = 1 MHz
Ck
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
Typ.
Max
1.25
Unit
IC/IF
VCE = 5 V, IF = 1 mA
CNY75GA
15
%
CNY75GB
CNY75GC
CNY75GA
CTR
CTR
CTR
30
60
63
%
%
%
VCE = 5 V, IF = 10 mA
CNY75GB
CNY75GC
CTR
CTR
100
160
200
320
%
%
Switching Characteristics
Parameter
Current
Delay
Rise time
Storage
Fall time
Turn-on
time
Turn-off
time
Turn-on
time
Turn-off
time
Test
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 1.0 kΩ
condition
(see figure 3)
tS
(see figure 4)
Symbol
IF
tD
tr
tf
ton
toff
ton
toff
Unit
mA
10
10
10
µs
2.0
2.5
2.8
µs
2.5
3.0
4.2
µs
0.3
0.3
0.3
µs
2.7
3.7
4.7
µs
4.5
5.5
7.0
µs
3.0
4.0
5.0
µs
µs
CNY75GA
CNY75GB
CNY75GC
10.0
16.5
11.0
25.0
20.0
37.5
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
3
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter
Test condition
Test condition
Test condition
Symbol
IF
Min
Min
Min
Typ.
Typ.
Typ.
Max
130
Unit
mA
Forward current
Output
Parameter
Symbol
Pdiss
Max
265
Unit
mW
Power dissipation
Coupler
Parameter
Symbol
VIOTM
Max
6
Unit
kV
Rated impulse voltage
Safety temperature
Tsi
150
°C
Insulation Rated Parameters
Parameter
Test condition
Symbol
Vpd
Min
1.6
Typ.
Max
Unit
kV
Partial discharge test voltage - 100 %, ttest = 1 s
Routine test
Partial discharge test voltage - tTr = 60 s, ttest = 10 s,
VIOTM
6
kV
Lot test (sample test)
(see figure 2)
Vpd
RIO
RIO
RIO
1.3
kV
Ω
1012
1011
109
Insulation resistance
V
V
V
IO = 500 V
IO = 500 V, Tamb ≤ 100 °C
IO = 500 V, Tamb ≤ 150 °C
Ω
Ω
(construction test only)
V
IOTM
t , t = 1 to 10 s
1
2
275
250
225
200
175
150
125
100
t , t = 1 s
3
4
t
= 10 s
= 12 s
test
t
stres
P
si
(mW)
V
Pd
V
V
IOWM
IORM
75
50
25
0
I
si
(mA)
0
t
3
t
t
test 4
t
1
t
Tr
= 60 s
t
2
t
stres
13930
0
25
T
50
75 100 125 150 175
t
95 10923
- Ambient Temperature ( °C )
amb
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
www.vishay.com
4
Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
300
250
200
150
100
50
V
I =0
F
=30V
CE
Coupled device
1000
Phototransistor
IR-diode
100
10
1
0
100
0
25
50
75
0
40
80
120
96 11700
T
amb
– Ambient Temperature(°C )
T
amb
– Ambient Temperature( °C )
95 11038
Figure 3. Total Power Dissipation vs. Ambient Temperature
Figure 6. Collector Dark Current vs. Ambient Temperature
1
1000
100
10
V
=5V
CB
0.1
0.01
1
0.001
0.1
100
1
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- Forward Voltage ( V )
I
– Forward Current ( mA )
96 11862
V
95 11039
F
F
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Base Current vs. Forward Current
100
1.5
V
=5V
CE
V
=5V
CE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I =10mA
F
10
1
0.1
0.01
100
0.1
1
10
–30–20 –10
0
10 20 30 40 50 60 70 80
I
– Forward Current ( mA )
96 11918
T
amb
– Ambient Temperature (°C )
95 11040
F
Figure 5. Relative Current Transfer Ratio vs. Ambient
Temperature
Figure 8. Collector Current vs. Forward Current
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
5
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
100
1.0
0.8
0.6
I =50mA
F
CTR=50%
20mA
10mA
10
1
CNY75A
5mA
0.4
0.2
0
20%
2mA
1mA
10%
CNY75A
0.1
100
100
0.1
1
10
1
10
I – Collector Current ( mA )
C
V
– Collector Emitter Voltage ( V )
95 11041
95 11034
CE
Figure 9. Collector Current vs. Collector Emitter Voltage
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
100
1.0
CTR=50%
I =50mA
F
20mA
10mA
0.8
CNY75B
10
1
0.6
5mA
2mA
1mA
20%
0.4
0.2
10%
CNY75B
0.1
0
100
– Collector Emitter Voltage ( V )
100
0.1
1
10
1
10
V
I
– Collector Current ( mA )
C
95 11042
95 11043
CE
Figure 10. Collector Current vs. Collector Emitter Voltage
Figure 13. Collector Emitter Saturation Voltage vs. Collector
Current
1.0
100.0
CTR=50%
I =50mA
F
20mA
10mA
0.8
CNY75C
10.0
1.0
0.6
0.4
5mA
2mA
1mA
0.2
20%
10%
0
CNY75C
0.1
100
1
10
0.1
1.0
10.0
100.0
I
– Collector Current ( mA )
96 11919
V
– Collector Emitter Voltage ( V )
95 11044
C
CE
Figure 11. Collector Current vs. Collector Emitter Voltage
Figure 14. Collector Emitter Saturation Voltage vs. Collector
Current
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Document Number 83536
Rev. 1.7, 26-Oct-04
6
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
1000
800
1000
V
=5V
CE
CNY75C(G)
V
=5V
CE
100
10
1
600
400
200
0
100
100
0.01
0.1
1
10
0.1
1
10
I – Forward Current ( mA )
F
I
– Collector Current ( mA )
95 11035
95 11046
C
Figure 15. DC Current Gain vs. Collector Current
Figure 18. Current Transfer Ratio vs. Forward Current
1000
50
CNY75A(G)
=5V
CNY75A(G)
V
CE
Saturated Operation
40
30
V =5V
S
100
R =1kˇΩ
L
t
t
off
20
10
0
10
1
on
100
20
0.1
1
10
0
5
10
15
I
– Forward Current ( mA )
I
– Forward Current ( mA )
95 11036
95 11033
F
F
Figure 16. Current Transfer Ratio vs. Forward Current
Figure 19. Turn on / off Time vs. Forward Current
1000
50
CNY75B(G)
CNY75B(G)
Saturated Operation
V =5V
S
V
=5V
CE
40
R =1kˇΩ
L
100
10
1
30
t
t
off
20
10
0
on
100
20
0.1
1
10
0
5
10
15
I
– Forward Current ( mA )
I
– Forward Current ( mA )
95 11045
95 11048
F
F
Figure 17. Current Transfer Ratio vs. Forward Current
Figure 20. Turn on / off Time vs. Forward Current
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
7
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
50
20
15
CNY75C(G)
Saturated Operation
t
off
CNY75C(G)
Non Saturated
Operation
40
30
V =5V
S
R =1kˇΩ
L
V =5V
S
R =100ˇΩ
L
t
t
on
10
20
10
0
off
5
0
t
on
20
10
0
5
10
15
0
2
4
6
8
I
– Forward Current ( mA )
I – Collector Current ( mA )
C
95 11050
95 11049
F
Figure 21. Turn on / off Time vs. Forward Current
Figure 24. Turn on / off Time vs. Collector Current
20
CNY75A(G)
Non Saturated
Operation
Customer Code/
Identification/
Option
15
Product Code
VDE Logo
V =5V
S
t
t
R =100ˇΩ
L
on
10
V
D
E
UL Logo
off
5
0
V XXXY 68
Plant Code
Package Code
Vishay Logo
17936
10
0
2
4
6
8
Date Code (year, week)
I
– Collector Current ( mA )
95 11032
C
Figure 22. Turn on / off Time vs. Collector Current
Figure 25. Marking example
20
CNY75B(G)
Non Saturated
Operation
V =5V
S
15
R =100ˇΩ
L
10
t
t
on
5
0
off
10
0
2
4
6
8
I
– Collector Current ( mA )
95 11047
C
Figure 23. Turn on / off Time vs. Collector Current
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8
Document Number 83536
Rev. 1.7, 26-Oct-04
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Package Dimensions in mm
14770
Package Dimensions in mm
14771
Document Number 83536
Rev. 1.7, 26-Oct-04
www.vishay.com
9
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
10
Document Number 83536
Rev. 1.7, 26-Oct-04
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