CNY17-4-X001 [VISHAY]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, DIP-6;
| 型号： | CNY17-4-X001 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, DIP-6 输出元件 光电 |
| 文件： | 总4页 (文件大小：467K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CNY17
TRIOS Phototransistor
Optocoupler
FEATURES
Dimensions in inches (mm)
• High Current Transfer Ratio
CNY17-1, 40 to 80%
CNY17-2, 63 to 125%
CNY17-3, 100 to 200%
CNY17-4, 160 to 320%
pin one ID
2
1
3
6
5
4
1
2
3
Anode
Cathode
NC
Base
.248 (6.30)
.256 (6.50)
Collector
Emitter
• Breakdown Voltage, 5300 V
RMS
4
5
6
• Field-Effect Stable by TRIOS—TRansparent
IOn Shield
• Long Term Stability
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (1.22)
.022 (0.55)
.039
(1.00)
Min.
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
VE
D
.130 (3.30)
.150 (3.81)
•
VDE #0884, Available with Option 1
18°
4°
DESCRIPTION
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
The CNY17 is an optically coupled pair consisting
of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon NPN phototransistor.
3°–9°
.010 (.25)
typ.
.300–.347
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
(7.62–8.81)
Signal information, including a DC level, can be trans-
mitted by the device while maintaining a high degree
of electrical isolation between input and output.
Characteristics (T =25°C)
A
The CNY17 can be used to replace relays and trans-
formers in many digital interface applications, as well
as analog applications such as CRT modulation.
Parameter
Emitter
Symbol
Values
Unit Condition
Maximum Ratings (T =25°C)
Emitter
Forward Voltage
VF
1.25
(≤1.65)
V
IF = 60 mA
A
Reverse Voltage .............................................6.0 V
Forward Current .......................................... 60 mA
Surge Current (t≤10 µs)................................. 2.5 A
Power Dissipation......................................100 mW
Detector
Collector-Emitter Breakdown Voltage..............70 V
Emitter-Base Breakdown Voltage...................7.0 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)..................... 100 mA
Power Dissipation......................................150 mW
Package
Breakdown Voltage
Reverse Current
Capacitance
VBR
IR
≥6.0
IR = 10 mA
VR = 6.0 V
VR=0 V, f=1.0 MHz
—
0.01 (≤10)
25
µA
—
pF
Thermal Resistance
Detector
Rthjamb
750
K/W
Capacitance
CCE
CCB
CEB
5.2
6.5
7.5
pF
VCE=5.0 V, f=1.0 MHz
VCB=5.0 V, f=1.0 MHz
VEB=5.0 V, f=1.0 MHz
Isolation Test Voltage (between emitter &
detector referred to climate DIN 50014,
part 2, Nov. 74) (t=1 sec)...................5300 V
Thermal Resistance
Rthjamb
500
K/W
—
Package
RMS
Creepage Distance ................................. ≥7.0 mm
Clearance Distance................................. ≥7.0 mm
Isolation Thickness between
Emitter and Detector.............................≥0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1 ...........................................175
Collector-Emitter
Saturation Voltage
IF =10 mA,
IC=2.5 mA
VCEsat
0.25 (≤0.4)
V
Coupling Capacitance CC
0.6
pF
—
Isolation Resistance
12
V =500 V, T =25°C.............................. ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C............................ ≥10
IO
A
Storage Temperature...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Junction Temperature...................................100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) .........260°C
Document Number: 83606
Revision 17-August-01
www.vishay.com
2–68
Figure 3. Current transfer ratio versus
Current Transfer Ratio and Collector-Emitter Leakage Current by dash
diode current (T =–25°C, V =5.0 V)
number (T =25°C)
A
CE
A
I /I =f (I )
C
F
F
-1
-2
-3
-4
Unit
%
IC/IF at VCE=5.0 V
(IF=10 mA)
40-80
30 (>13)
63-125
45 (>22)
100-200
70 (>34)
160-320
90 (>56)
IC/IF at VCE=5.0 V
(IF=1.0 mA)
%
Collector-Emitter
Leakage Current
(VCE=10 V) (ICEO
2.0 (≤ 50) 2.0 (≤ 50) 5.0 (≤ 100) 5.0 (≤ 100) nA
)
1
2
3
4
Figure 1. Linear Operation (without saturation)
IF
RL=75 Ω
VCC=5 V
IC
47 Ω
Figure 4. Current transfer ratio versus
I =10 mA, V =5.0 V, T =25°C
diode current (T =0°C, V =5.0 V)
F
CC
A
A
CE
I /I =f (I )
Load Resistance
Turn-On Time
Rise Time
RL
75
W
C
F
F
tON
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
t
r
Turn-Off Time
Fall Time
tOFF
t
f
Cut-off Frequency
f
CO
1
2
3
4
Figure 2. Switching Operation (with saturation)
IF
1 KΩ
VCC=5 V
47 Ω
Figure 5. Current transfer ratio versus
diode current (T =25°C, V =5.0 V)
A
CE
-1
F
-2 and -3
F
-4
F
I /I =f (I )
C
F
F
(I =20 mA)
(I =10 mA)
(I =5.0 mA)
Turn-On Time
Rise Time
tON
3.0
2.0
18
4.2
3.0
23
6.0
4.6
25
µs
µs
µs
µs
t
f
Turn-Off Time
Fall Time
tOFF
11
14
15
t
f
1
2
3
4
Document Number: 83606
Revision 17-August-01
www.vishay.com
2–69
Figure 6. Current transfer ratio versus
diode current (T =50°C)
Figure 9.Transistor characteristics
(B=550) CNY17-3, -4 I =f(V
Figure 12. Collector emitter off-state
current I =f (V, T) (T =25°C, I =0)
)
A
C
CE
CEO
A
F
V
=5.0 V, I /I =f (I )
(T =25°C, I =0)
CE
C
F
F
A F
1
2
3
4
Figure 13. Saturation voltage versus
collector current and modulation
Figure 7. Current transfer ratio versus
Figure 10. Output characteristics
CNY17-3, -4 (T =25°C) I =f(V
diode current (T =75°C) V =5.0 V
)
depth CNY17-1 V
=f (I ) (T =25°C)
C A
sat
A
CE
A
C
CE
CE
1
2
3
4
Figure 14. Saturation voltage versus
collector current and modulation
Figure 11. Forward voltage V =f (I )
Figure 8. Current transfer ratio versus
temperature (I =10 mA, V =5.0 V)
F
F
F
CE
depth CNY17-2 V
(T =25°C)
=f (I )
I /I =f (T)
CE
C
sat
C
F
A
4
3
2
1
Document Number: 83606
Revision 17-August-01
www.vishay.com
2–70
Figure 15. Saturation voltage versus
collector current and modulation
Figure 17. Permissible pulse load
D=parameter, T =25°C, I =f (t )
Figure 19. Permissible forward
current P =f (T )
A
F
p
A
tot
depth CNY17-3 V
=f (I ) (T =25°C)
CE
C A
sat
Figure 18. Permissible power
dissipation transistor and diode
Figure 16. Saturation voltage versus
collector current and modulation
P
=f (T )
depth CNY17-4 V
=f (I ) (T =25°C)
A
CE
C A
tot
sat
Document Number: 83606
Revision 17-August-01
www.vishay.com
2–71
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