CBA3750CKAHW [VISHAY]
Thin Film Binary MOS Capacitors;型号: | CBA3750CKAHW |
厂家: | VISHAY |
描述: | Thin Film Binary MOS Capacitors |
文件: | 总3页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CBA
Vishay Electro-Films
www.vishay.com
Thin Film Binary MOS Capacitors
FEATURES
• Wire bondable
• User value selection
• Four capacitors with common connection
• Capacitance range: 0.25 pF to 15 pF in binary
increments
• Dielectric: Silicon dioxide
Product may not be to scale
• Chip size: 0.019" x 0.030"
The CBA MOS capacitor chips each contain four different
capacitors in binary increments allowing the user many
choices in value selection. Two versions of CBA capacitors
are available: one with a total capacitance of 3.75 pF and
one with a total capacitance of 15 pF.
• Substrate: Silicon with gold backing
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The CBAs are 100 % electrically tested and
visually inspected to MIL-STD-883.
Vishay EFI CBA binary MOS multi-value capacitor chips are
designed for hybrid packages in which microwave circuits
are to be trimmed. This is done on the CBA chips by
selecting the bonding pad for the required capacitance and
wire-bonding by conventional techniques.
WV (DC) VALUES AND TOLERANCES
CAPACITOR MODEL
CBA 3.75 pF
CBA 15 pF
UNIT
Case Size
0203
0203
Total Capacitance
Capacitance Values
Tolerance
3.75
15
pF
pF
%
V
0.25, 0.50, 1.0, 2.0
1.0, 2.0, 4.0, 8.0
25
10
30
DC Working Voltage
100
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
VALUE
UNIT
pF
Capacitance Range
0.25 to 15
100
Maximum Working Voltage
V
Peak Voltage at + 25 °C
1.5 x working voltage
0.1 max. MOS
Dissipation Factor, 1 kHz, 1 VRMS, + 25 °C
Q at 1 mHz, 50 mVRMS, + 25 °C
%
1000 min.
TCC, - 55 °C to + 150 °C
+ 15 25
ppm/°C
Insulation Resistance at Working Voltage, + 25 °C
Operating Temperature Range
109 min.
°C
%
%
%
%
- 55 to + 150
Thermal Shock
0.25 + 0.25 pF max. C/C
1.0 + 0.25 pF max. C/C
0.25 + 0.25 pF max. C/C
0.25 + 0.25 pF max.
Moisture Resistance, MIL-STD-202, Method 106
Short Time Overload, + 25 °C, 5 s; 1.5 x Working Voltage
High Temperature Exposure: 100 h at + 150 °C Ambient
Life, MIL-STD-202, Method 108,
Condition D, + 125 °C Ambient, 1000 h at Working Voltage
2.0 + 0.25 pF max. C/C
%
Revision: 02-May-13
Document Number: 61041
1
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CBA
Vishay Electro-Films
www.vishay.com
CONFIGURATIONS in inches
0.004 0.004 0.004 0.008
0.019
0.015
0.00375
0.0075
0.030
SCHEMATIC
TOP BONDING PADS
TOP BONDING PADS
1.0 pF
4.0 pF
0.25 pF 0.5 pF
2.0 pF
1.0 pF 2.0 pF
8.0 pF
Back of chip
Back of chip
MECHANICAL SPECIFICATIONS
PARAMETER
VALUE
Chip Size
0.019" x 0.030" 0.002" (0.48 mm x 0.75 mm 0.05 mm)
0.010" 0.003" (0.25 mm 0.08 mm)
Semiconductor silicon
Chip Thickness
Chip Substrate Material
Dielectric
Silicon dioxide (MOS)
Bonding Pads
Backing
10 kÅ minimum aluminum
3 kÅ minimum gold
GLOBAL PART NUMBER INFORMATION
Global Part Number: CBA3750CMAHWS
Global Part Number Description: CBA 3.75 pF 20 % Al H WS
C
B
A
3
7
5
0
C
M
A
H
W
S
CAPACITANCE
MULTIPLIER
CODE
CAPACITANCE
(pF)
TOLERANCE
CODE
VISUAL
CLASS
PACKAGING
CODE
MODEL
TERMINATION
CBA
First 4 digits
are significant
figures of
C = 0.001
B = 0.01
K = 10 %
M = 20 %
L = 25 %
G = Au
A = Al
H = Class H
K = Class K
WS = Waffle pack
100 min., 1 mult
capacitance
Revision: 02-May-13
Document Number: 61041
2
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 01-Jan-2021
Document Number: 91000
1
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