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BZG04C150-TR [VISHAY]

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SIMILAR TO SMA, 2 PIN, Transient Suppressor;
BZG04C150-TR
型号： BZG04C150-TR
厂家： VISHAY    VISHAY
描述：

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SIMILAR TO SMA, 2 PIN, Transient Suppressor

光电二极管 电视
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BZG04C...  
Vishay Semiconductors  
VISHAY  
Silicon Zener Diodes with surge Current Specificaton  
Features  
• Glass passivated junction  
• High reliability  
• Stand-off Voltage range 8.2 V to 220 V  
• Excellent clamping cabability  
15811  
• Fast response time (typ. ≤ 1 ps from 0 to VZmin  
)
Applications  
Protection from high voltage, high energy transients  
Mechanical Data  
Case: DO214AC  
Weight: 77 mg  
Packaging Codes/Options:  
TR / 1.5k 7 " reel  
TR3 / 6k 13 " reel 6k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
< 25 K/W, T = 100 °C  
Symbol  
Value  
3
Unit  
W
Power dissipation  
R
R
P
P
P
thJA  
thJA  
amb  
Diss  
Diss  
< 100 K/W, T  
= 50 °C  
1.25  
300  
W
W
amb  
Non repetitive peak surge power t = 10/1000 µs sq.pulse,  
p
ZSM  
dissipation  
T = 25 °C prior to surge  
j
Peak forward surge current  
Junction temperature  
10 ms single half sine wave  
I
50  
150  
A
FSM  
T
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
stg  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
25  
Unit  
Junction lead  
R
R
K/W  
K/W  
thJL  
thJA  
Junction ambient  
mounted on epoxy-glass hard  
tissue, Fig. 1a  
150  
125  
100  
mounted on epoxy-glass hard  
tissue, Fig. 1b  
R
R
K/W  
K/W  
thJA  
thJA  
mounted on Al-oxid-ceramic  
(Al O ), Fig. 1b  
2
3
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
Max  
1.2  
Unit  
V
Forward voltage  
I = 0.5 A  
V
F
F
Document Number 85594  
Rev. 2.0, 15-Oct-03  
www.vishay.com  
1
BZG04C...  
Vishay Semiconductors  
VISHAY  
Electrical Characteristics  
Partnumber  
Standoff Voltage  
Breakdown Voltage  
@ I  
TK @ I  
Clamping Voltage  
VZ  
R
V
I
V
V
@ I  
@ I  
R
R
(BR)  
R
CL(R)  
PP  
ZT  
*)  
*)  
V
µA  
V
mA  
%/K  
V
A
max  
20  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
min  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
typ  
max  
0.09  
0.1  
max  
BZG04C8V2  
BZG04C9V1  
BZG04C10  
BZG04C11  
BZG04C12  
BZG04C13  
BZG04C15  
BZG04C16  
BZG04C18  
BZG04C20  
BZG04C22  
BZG04C24  
BZG04C27  
BZG04C30  
BZG04C33  
BZG04C36  
BZG04C39  
BZG04C43  
BZG04C47  
BZG04C51  
BZG04C56  
BZG04C62  
BZG04C68  
BZG04C75  
BZG04C82  
BZG04C91  
BZG04C100  
BZG04C110  
BZG04C120  
BZG04C130  
BZG04C150  
BZG04C160  
BZG04C180  
BZG04C200  
BZG04C220  
8.2  
9.1  
10  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
14.8  
15.7  
17  
20.3  
19.1  
17.7  
15.9  
14.4  
13.1  
11.7  
10.6  
9.7  
8.9  
7.9  
7.1  
6.5  
6.0  
5.5  
4.9  
4.6  
4.2  
3.8  
3.5  
3.2  
2.9  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.1  
11  
0.1  
18.9  
20.9  
22.9  
25.6  
28.4  
31  
12  
0.1  
13  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
15  
16  
18  
20  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
65.5  
70.8  
78.6  
86.5  
94.4  
103.5  
114  
126  
139  
152  
167  
185  
204  
224  
249  
276  
305  
336  
380  
22  
24  
27  
31  
30  
34  
33  
37  
36  
40  
39  
44  
43  
48  
47  
52  
51  
58  
56  
64  
62  
70  
68  
77  
75  
85  
82  
94  
5
91  
104  
114  
124  
138  
153  
168  
188  
208  
228  
251  
5
100  
110  
120  
130  
150  
160  
180  
200  
220  
5
5
5
5
5
5
2
2
2
*)  
10/1000 µs pulse  
www.vishay.com  
2
Document Number 85594  
Rev. 2.0, 15-Oct-03  
BZG04C...  
Vishay Semiconductors  
VISHAY  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
a)  
b)  
3.0  
2.5  
5.0  
2.0  
2.0  
2.0  
1.5  
1.0  
1.5  
10.0  
0.5  
0
1.0  
25.0  
25.0  
2.0  
0
0.5  
V
1.0  
1.5  
94 9313  
– Forward Voltage ( V )  
94 9581  
F
Figure 1. Boards for R  
definition (copper overlay 35µ)  
Figure 4. Forward Current vs. Forward Voltage  
thJA  
10000  
1000  
100  
10  
2.6  
2.4  
2.2  
7.0  
2.4  
94 9314  
100  
0.01  
0.1  
t
1
10  
– Pulse Length ( ms )  
94 9582  
p
Figure 2. Recommended foot pads (in mm)  
Figure 5. Non Repetitive Surge Power Dissipation vs. Pulse  
Length  
40  
30  
20  
l
l
10  
0
T =constant  
L
30  
0
5
10  
15  
20  
25  
l – Lead Length ( mm )  
94 9570  
Figure 3. Typ. Thermal Resistance vs. Lead Length  
Document Number 85594  
Rev. 2.0, 15-Oct-03  
www.vishay.com  
3
BZG04C...  
Vishay Semiconductors  
VISHAY  
1000  
100  
t /T=0.5  
p
t /T=0.2  
p
10  
1
t /T=0.1  
p
t /T=0.05  
p
t /T=0.02  
p
t /T=0.01  
p
–5  
–4  
–3  
–2  
–1  
0
1
2
10  
10  
10  
10  
10  
10  
10  
10  
t
p
– Pulse Length ( s )  
94 9583  
Figure 6. Thermal Response  
Package Dimensions in mm  
14275  
www.vishay.com  
4
Document Number 85594  
Rev. 2.0, 15-Oct-03  
BZG04C...  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85594  
Rev. 2.0, 15-Oct-03  
www.vishay.com  
5

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