BYVB32-200HE3/45 [VISHAY]
Dual Common-Cathode Ultrafast Rectifier; 双共阴极超快整流器
| 型号： | BYVB32-200HE3/45 |
| 厂家： | 
VISHAY |
| 描述： | Dual Common-Cathode Ultrafast Rectifier |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
FEATURES
TO-220AB
ITO-220AB
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
1
BYV32 Series
BYVF32 Series
PIN 1
PIN 2
CASE
PIN 1
PIN 2
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
PIN 3
PIN 3
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
2
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
1
BYVB32 Series
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
18 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
VRRM
IFSM
trr
50 V to 200 V
150 A
25 ns
VF
0.85 V
TJ max.
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 125 °C
100
IF(AV)
18
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
TJ, TSTG
VAC
150
A
°C
V
Operating storage and temperature range
- 65 to + 150
1500
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88558
Revision: 05-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL BYV32-50
BYV32-100 BYV32-150 BYV32-200 UNIT
Maximum instantaneous
IF = 20 A
TJ = 25 °C
TJ = 100 °C
1.15
0.85
VF
V
forward voltage per diode (1) IF = 5.0 A
Maximum DC reverse
current per diode at rated
DCblockingvoltage
TJ = 25 °C
TJ = 100 °C
10
600
IR
µA
Maximum reverse
recovery time per diode
IF = 1 A, VR = 30 V,
dI/dt = 100 A/µs, Irr = 10 % IRM
trr
25
45
ns
Typical junction
capacitance per diode
4.0 V, 1 MHz
CJ
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
BYV
BYVF
BYVB
UNIT
Typical thermal resistance from junction to case per diode
RθJC
1.6
5.0
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
BYV32-200-E3/45
1.85
1.97
1.35
1.35
1.85
1.97
1.35
1.35
45
45
45
81
45
45
45
81
BYVF32-200-E3/45
BYVB32-200-E3/45
BYVB32-200-E3/81
BYV32-200HE3/45 (1)
BYVF32-200HE3/45 (1)
BYVB32-200HE3/45 (1)
BYVB32-200HE3/81 (1)
50/tube
Tube
50/tube
Tube
800/reel
50/tube
Tape and reel
Tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88558
Revision: 05-May-08
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
20
1000
Resistive or Inductive Load
18
16
TC = 100 °C
100
10
1
12
8
4
TC = 25 °C
0
0.1
25
50
75
150
0
100
125
0
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics Per Diode
150
125
100
75
60
TJ = 25 °C
f = 1.0 MHz
Vsig = 5 mVp-p
TJ = 150 °C
10 ms Single Half Sine-Wave
50
40
30
20
10
0
50
25
0
1
100
1
100
10
10
Number of Cycles at 50 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number: 88558
Revision: 05-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.415 (10.54) MAX.
0.384 (9.75)
0.185 (4.70)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.148 (3.74)
7° REF.
0.113 (2.87)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.103 (2.62)
0.122 (3.08) DIA.
0.145 (3.68)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.135 (3.43)
0.580 (14.73)
PIN
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.025 (0.64)
0.104 (2.65)
0.096 (2.45)
0.020 (0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
www.vishay.com
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88558
Revision: 05-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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