BYV13 [VISHAY]
Fast Silicon Mesa Rectifiers; 快速硅梅萨整流器
| 型号： | BYV13 |
| 厂家： | 
VISHAY |
| 描述： | Fast Silicon Mesa Rectifiers |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV12...BYV16
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
Glass passivated junction
Hermetically sealed package
Soft recovery characteristic
Low reverse current
Applications
94 9539
Fast rectifier and switch for example for TV–line output
circuits and switch mode power supply
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
100
400
600
800
1000
40
Unit
V
V
V
V
BYV12
BYV13
BYV14
BYV15
BYV16
V =V
R
RRM
RRM
RRM
RRM
RRM
V =V
R
V =V
R
V =V
R
V =V
R
V
A
Peak forward surge current
t =10ms,
I
p
FSM
half sinewave
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
I
I
9
1.5
–65...+175
A
A
C
FRM
ϕ=180 , T =25 C
amb
FAV
T =T
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=10mm, T =constant
on PC board with spacing 25mm
Symbol
Value
45
100
Unit
K/W
K/W
R
thJA
R
thJA
L
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =1A
V
1.5
5
150
300
200
V
A
A
ns
nC
F
F
V =V
I
I
1
60
R
RRM
R
V =V
, T =150 C
R
RRM
j
R
Reverse recovery time
Reverse recovery charge
I =0.5A, I =1A, i =0.25A
t
rr
Q
F
R
R
I =1A, di/dt=5A/ s
F
rr
Document Number 86039
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYV12...BYV16
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
240
120
R
thJA
=100K/W
l
l
200
160
120
80
100
80
60
40
20
0
V
R RM
BYV12
V
R
T =constant
L
BYV16
BYV14
BYV13
BYV15
40
0
1000
0
200
400
600
800
30
0
5
10
15
20
25
V ,V
– Reverse / Repetitive Peak Reverse
Voltage ( V )
R
RRM
94 9517
94 9101
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 4. Junction Temperature vs. Reverse/Repetitive
Peak Reverse Voltage
1.2
1000
V
20kHz
R RM
1.0
0.8
0.6
0.4
0.2
0
f
Scattering Limit
100
R
100K/W
thJA
PCB
10
1
V =V
R
R RM
0.1
200
200
0
40
80
120
160
0
40
80
120
160
94 9519
T
amb
– Ambient Temperature ( °C )
94 9521
T – Junction Temperature ( °C )
j
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 5. Reverse Current vs. Junction Temperature
100
2.0
V
R RM
f
20kHz
45K/W
10
1.6
1.2
0.8
0.4
0
R
thJA
L=10mm
T =175°C
j
1
T =25°C
j
0.1
0.01
200
4
0
40
80
120
160
0
1
2
3
94 9518
T
amb
– Ambient Temperature ( °C )
94 9520
V
– Forward Voltage ( V )
F
Figure 3. Max. Average Forward Current vs. Ambient
Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86039
Rev. 2, 24-Jun-98
2 (4)
BYV12...BYV16
Vishay Telefunken
12
10
8
6
4
2
f=470kHz
T =25°C
j
0
100
0.1
1
10
V – Reverse Voltage ( V )
R
94 9523
Figure 7. Typ. Diode Capacitance vs. Reverse Voltage
1000
V
=1000V
R RM
R
thJA
=100K/W
100
10
1
T
=25°C
amb
T
amb
=45°C
T
amb
=60°C
T
=70°C
amb
T
=100°C
amb
–5
–4
–3
–2
–1
0
1
0
1
10
10
10
10
10
10
10
10
10
I
– Repetitive Peak
Forward Current ( A )
FRM
94 9522
t – Pulse Length ( s )
p
Figure 8. Thermal Response
Dimensions in mm
3.6 max.
94 9538
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
0.82 max.
26 min.
26 min.
4.2 max.
Document Number 86039
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYV12...BYV16
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86039
Rev. 2, 24-Jun-98
4 (4)
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