BYT77 [VISHAY]
Fast Silicon Mesa Rectifiers; 快速硅梅萨整流器
| 型号： | BYT77 |
| 厂家： | 
VISHAY |
| 描述： | Fast Silicon Mesa Rectifiers |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT77.BYT78
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Controlled avalanche characteristics
Applications
94 9588
Fast ”soft recovery” rectifier
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
Test Conditions
Type
BYT77
BYT78
Symbol
Value
800
1000
100
Unit
V
V
A
A
V
R
V
R
Peak forward surge current
Average forward current
t =10ms, half sinewave
I
p
FSM
T
amb
45 C
I
3
FAV
Junction and storage
temperature range
T =T
–65...+175
C
j
stg
Non repetitive reverse
avalanche energy
I
=400mA,
E
R
15
mJ
(BR)R
inductive load L=120mH
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=10mm, T =constant
on PC board with spacing 37.5mm
Symbol
Value
25
70
Unit
K/W
K/W
R
thJA
R
thJA
L
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =3A
V
1.0
1
60
1.1
5
150
300
V
A
A
ns
F
F
V
R
I
I
R
V , T =150 C
R
j
R
Reverse recovery time
I =0.5A, I =1A, i =0.25A
F
t
rr
R
R
Document Number 86034
Rev. 3, 07-Dec-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYT77.BYT78
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
40
30
20
10
0
240
200
160
120
80
V
R RM
V
R
l
l
R
=70K/W
800
thJA
40
T =constant
L
0
30
1000
0
5
10
15
20
25
0
200
400
600
94 9466
l – Lead Length ( mm )
94 9467
Reverse / Repetitive Peak Reverse Voltage ( V )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
1000
2.0
1.6
1.2
0.8
Scattering Limit
100
10
1
f
20kHz
=70K/W
0.4
0
R
thJA
V =V
R
PCB
R RM
0.1
200
200
0
40
80
120
160
0
40
80
120
160
94 9468
T
amb
– Ambient Temperature ( °C )
94 9469
T – Junction Temperature ( °C )
j
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 5. Reverse Current vs. Junction Temperature
4
3
2
100
T =175°C
j
10
1
T =25°C
j
1
0
0.1
0.01
f
20kHz
=25K/W
R
thJA
L=10mm
200
3.0
0
40
80
120
160
0
0.6
1.2
1.8
2.4
94 9471
T
amb
– Ambient Temperature ( °C )
94 9472
V – Forward Voltage ( V )
F
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86034
Rev. 3, 07-Dec-99
2 (4)
BYT77.BYT78
Vishay Telefunken
80
60
40
20
0
f=470kHz
T =25°C
j
100
0.1
1
10
V – Reverse Voltage ( V )
R
94 9470
Figure 7. Typ. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
4.3 max.
Sintered Glass Case
SOD 64
Cathode Identification
technical drawings
according to DIN
specifications
Weight max. 1.0g
1.35 max.
26 min.
26 min.
4.2 max.
94 9587
Document Number 86034
Rev. 3, 07-Dec-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYT77.BYT78
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86034
Rev. 3, 07-Dec-99
4 (4)
相关型号：
BYT77-TAP
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY
BYT77-TR
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY
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