BYS10-25-E3 [VISHAY]
DIODE 1.5 A, 25 V, SILICON, RECTIFIER DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Rectifier Diode;
| 型号： | BYS10-25-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1.5 A, 25 V, SILICON, RECTIFIER DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Rectifier Diode 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYS10-25 thru BYS10-45
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
1.5 A
25 V to 45 V
40 A
VF
0.50 V
Tj max.
150 °C
DO-214AC (SMA)
Features
Mechanical Data
• Low profile package
Case: DO-214AC (SMA)
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• High surge capability
Polarity: Color band denotes the cathode end
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Device marking code
Symbol
BYS10-25
BYS 025
25
BYS10-35
BYS 035
35
BYS10-45
BYS 045
45
Unit
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
IFSM
V
A
A
Maximum average forward rectified current
1.5
Peak forward surge current single half sine-wave
superimposed on rated load
at 8.3 ms
at 10 ms
40
30
Junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Document Number 86013
14-Jul-05
www.vishay.com
1
BYS10-25 thru BYS10-45
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified#
Parameter
Test condition
at 1.0 A (1)
Symbol
VF
BYS10-25
BYS10-35
500
BYS10-45
Unit
mV
Maximuminstantaneousforward
voltage
(1)
Maximum DC reverse current
TJ = 25 °C
IR
500
10
µA
mA
at VRRM
TJ = 100 °C
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Symbol
RθJL
BYS10-25
BYS10-35
25
BYS10-45
Unit
Maximum Thermal Resistance - Junction Lead
°C/W
150 (1)
125 (2)
100 (3)
Maximum Thermal Resistance - Junction Ambient
RθJA
°C/W
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1000
7
BYS10-45
6
100
10
5
BYS10-35
4
R =25K/W
thJA
3
2
BYS10-25
V =V
R
RRM
1
1
0
R
=100K/W
thJA
0.1
200
200
0
40
80
120
160
0
40
80
120
160
Tj -- JunctionTemperature (°C)
Tj -- JunctionTemperature (°C)
Figure 1. Max. Reverse Power Dissipation
vs. Junction Temperature
Figure 2. Max. Reverse Current
vs. Junction Temperature
www.vishay.com
Document Number 86013
14-Jul-05
2
BYS10-25 thru BYS10-45
Vishay General Semiconductor
100
2.0
1.6
1.2
0.8
0.4
0
V
=V
, Half Sinewave, R
=25K/W
R
RRM
thJA
T =150°-C
j
10
1
BYS10-25
BYS10-35
T =25°-C
j
0.1
BYS10-45
40 80
0.01
200
0
120
160
2.0
0
0.4
0.8
1.2
1.6
Tamb -- Ambient Temperature (°C)
VF -- Forward Voltage (V)
Figure 3. Max. Average Forward Current
vs. Ambient Temperature
Figure 5. Max. Forward Current
vs. Forward Voltage
100
10
2.0
V =0V, Half Sinewave
R
1.6
1.2
0.8
0.4
0
R =25K/W
thJA
100K/W
125K/W
1
150K/W
0.1
0.01
0.1
1
10
100
200
0
40
80
120
160
t, Heating Time (sec.)
Tamb -- Ambient Temperature (°C)
Figure 4. Max. Average Forward Current
vs. Ambient Temperature
Figure 6. Diode Capacitance
vs. Reverse Voltage
Package outline dimensions in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 MAX.
(1.88 MAX.)
0.066 MIN.
(1.68 MIN.)
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.060 MIN.
0.012 (0.305)
0.006 (0.152)
(1.52 MIN.)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number 86013
14-Jul-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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