BYG21M-E3/TR3 [VISHAY]
DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode;
| 型号： | BYG21M-E3/TR3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode 软恢复二极管 快速软恢复二极管 局域网 光电二极管 |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYG21K-E3/HE3, BYG21M-E3/HE3
www.vishay.com
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMA (DO-214AC)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
1.5 A
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
VRRM
800 V, 1000 V
30 A
IFSM
IR
1.0 μA
MECHANICAL DATA
VF
trr
1.6 V
Case: SMA (DO-214AC)
120 ns
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
ER
20 mJ
TJ max.
Package
Diode variation
150 °C
SMA (DO-214AC)
Single
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG21K
BYG21K
800
BYG21M
BYG21M
1000
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
V
A
1.5
30
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
A
Pulse energy in avalanche mode, non repetitive
ER
20
mJ
°C
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 08-Mar-17
Document Number: 88961
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG21K-E3/HE3, BYG21M-E3/HE3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
BYG21K
BYG21M
UNIT
IF = 1 A
1.5
1.6
1
Maximum instantaneous
forward voltage
(1)
TJ = 25 °C
VF
V
IF = 1.5 A
TJ = 25 °C
Maximum reverse current
VR = VRRM
IR
µA
ns
TJ = 100 °C
10
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
trr
120
I
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG21K
BYG21M
UNIT
Typical thermal resistance, junction to lead, TL = const.
RJL
25
°C/W
(1)
RJA
150
125
100
(2)
Typical thermal resistance, junction to ambient
RJA
°C/W
(3)
RJA
Notes
(1)
Mounted on epoxy-glass hard tissue
Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYG21K-E3/TR
0.064
TR
TR3
H
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
BYG21K-E3/TR3
BYG21KHE3_A/H (1)
BYG21KHE3_A/I (1)
0.064
0.064
0.064
I
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VR = VRRM
Half Sine-Wave
TJ = 150 °C
RθJA = 25 K/W
1
TJ = 25 °C
RθJA = 125 K/W
RθJA = 150 K/W
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
Forward Voltage (V)
Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Revision: 08-Mar-17
Document Number: 88961
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG21K-E3/HE3, BYG21M-E3/HE3
www.vishay.com
Vishay General Semiconductor
100
200
VR = VRRM
TA = 125 °C
150
100
50
TA = 100 °C
TA = 75 °C
TA = 50 °C
10
TA = 25 °C
IR = 0.5 A, iR = 0.125 A
1
0
25
50
75
100
re (°C)
125
150
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Junction Temperatu
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current
120
1000
VR = VRRM
100
80
60
40
20
125 K/W DC
PR - Limit
at 100 % VR
100
10
1
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
PR - Limit
tp/T = 0.05
at 80 % VR
tp/T = 0.02
tp/T = 0.01
Single Pulse
0
25
50
75
100
125
150
10-5
10-4
10-3
10-2
10-1
100
101
102
Junction Temperature (°C)
Pulse Length (s)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 7 - Thermal Response
25
f = 1 MHz
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Revision: 08-Mar-17
Document Number: 88961
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG21K-E3/HE3, BYG21M-E3/HE3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 08-Mar-17
Document Number: 88961
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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