BY448TAP [VISHAY]

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 1500V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;
BY448TAP
型号: BY448TAP
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 1500V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

整流二极管
文件: 总5页 (文件大小:124K)
中文:  中文翻译
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BY448 / BY458  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
e2  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
High voltage rectification diode  
949539  
Efficiency diode in horizontal deflection circuits  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 369 mg  
Mechanical Data  
Case: SOD-57 Sintered glass case  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Parts Table  
Part  
Type differentiation  
VR = 1500 V; IFAV = 2 A  
R = 1200 V; IFAV = 2 A  
Package  
BY448  
BY458  
SOD-57  
SOD-57  
V
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Part  
Symbol  
VR = VRRM  
Value  
Unit  
V
see electrical characteristics  
BY448  
1500  
BY458  
V
R = VRRM  
IFSM  
IFAV  
1200  
V
A
Peak forward surge current  
Average forward current  
Junction temperature  
tp = 10 ms, half sinewave  
30  
2
140  
A
Tj  
°C  
°C  
mJ  
Storage temperature range  
Tstg  
- 55 to + 175  
10  
Non repetitive reverse  
avalanche energy  
I
(BR)R = 0.4 A  
ER  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Symbol  
Value  
Unit  
l = 10 mm, TL = constant  
RthJA  
RthJA  
45  
K/W  
K/W  
on PC board with spacing  
25 mm  
100  
Document Number 86006  
Rev. 1.6, 14-Apr-05  
www.vishay.com  
1
BY448 / BY458  
Vishay Semiconductors  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
Max  
1.6  
Unit  
V
Forward voltage  
Reverse current  
IF = 3 A  
V
V
R = VRRM  
R = VRRM, Tj = 140 °C  
IR  
IR  
trr  
trr  
3
140  
20  
2
µA  
µA  
µs  
µs  
Total reverse recovery time  
Reverse recovery time  
IF = 1 A, - diF/dt = 0.05 A/µs  
IF = 0.5 A, IR = 1 A, iR = 0,25 A  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
120  
l
l
2.5  
2.0  
1.5  
1.0  
0.5  
0
V
= V  
RRM  
R
100  
80  
half sinewave  
R
= 45 K/W  
thJA  
l = 10 mm  
T = constant  
L
60  
40  
20  
0
R
= 100 K/W  
thJA  
PCB: d = 25 mm  
30  
0
25 50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
T
amb  
- Ambient Temperature (°C )  
l - Lead Length ( mm )  
94 9101  
16418  
Figure 1. Typ. Thermal Resistance vs. Lead Length  
Figure 3. Max. Average Forward Current vs. Ambient Temperature  
1000  
100  
V
= V  
RRM  
R
T
j
150  
C
=
°
10  
1
100  
10  
1
T =25  
j
C
°
0.1  
0.01  
0.001  
25  
50  
75  
100  
125  
150  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
- Forward V oltage ( V )  
16417  
V
16419  
T - Junction T emperature (°C )  
F
j
Figure 2. Forward Current vs. Forward Voltage  
Figure 4. Reverse Current vs. Junction Temperature  
www.vishay.com  
2
Document Number 86006  
Rev. 1.6, 14-Apr-05  
BY448 / BY458  
Vishay Semiconductors  
400  
350  
300  
250  
200  
150  
100  
50  
35  
30  
25  
20  
15  
10  
5
V
= V  
RRM  
R
f= 1 MHz  
P
-Limit  
R
@100 % V  
R
P
R
-Limit  
@80 % V  
R
0
0
0.1  
1
10  
V - Reverse Voltage ( V )  
R
100  
25  
50  
75  
100  
125  
150  
16420  
T - Junction Temperature (°C )  
j
16421  
Figure 5. Max. Reverse Power Dissipation vs. Junction  
Temperature  
Figure 6. Diode Capacitance vs. Reverse Voltage  
Package Dimensions in mm (Inches)  
3.6 (0.140)max.  
94 9538  
Sintered Glass Case  
SOD-57  
Cathode Identification  
ISO Method E  
0.82 (0.032) max.  
26(1.014) min.  
26(1.014) min.  
4.0 (0.156) max.  
Document Number 86006  
Rev. 1.6, 14-Apr-05  
www.vishay.com  
3
BY448 / BY458  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
4
Document Number 86006  
Rev. 1.6, 14-Apr-05  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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