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BS170KL-TR1 [VISHAY]

N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
BS170KL-TR1
型号： BS170KL-TR1
厂家： VISHAY    VISHAY
描述：

N-Channel 60-V (D-S) MOSFET
N通道60 -V （D -S ）的MOSFET
文件： 总4页 (文件大小：74K)
中文：  中文翻译
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2N7000KL/BS170KL  
New Product  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D ESD Protected: 2000 V  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
VGS(th) (V)  
ID (A)  
0.47  
2 @ V = 10 V  
GS  
60  
1.0 to 2.5  
D Direct Logic-Level Interface: TTL/CMOS  
D Soild State Relays  
4 @ V = 4.5 V  
0.33  
GS  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Battery Operated Systems  
TO-226AA  
(TO-92)  
TO-92-18RM  
(TO-18 Lead Form)  
D
1
1
Device Marking  
S
G
D
D
Device Marking  
Front View  
Front View  
100 W  
G
“S” 2N  
7000KL  
xxyy  
“S” BS  
G
S
2
2
170KL  
xxyy  
“S” = Siliconix Logo  
xxyy = Date Code  
“S” = Siliconix Logo  
xxyy = Date Code  
3
3
Top View  
Top View  
S
Ordering Information: 2N7000KL-TR1  
Ordering Information: BS170KL-TR1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
60  
"20  
0.47  
DS  
GS  
V
T
= 25_C  
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 70_C  
A
0.37  
A
a
Pulsed Drain Current  
I
1.0  
DM  
T
= 25_C  
= 70_C  
0.8  
A
Power Dissipation  
P
W
D
T
A
0.51  
Maximum Junction-to-Ambient  
R
thJA  
156  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 72705  
S-40247—Rev. A, 16-Feb-04  
www.vishay.com  
1
2N7000KL/BS170KL  
Vishay Siliconix  
New Product  
a
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
Typ  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 10 mA  
60  
1
(BR)DSS  
GS  
D
V
V
V
= V , I = 250 mA  
2.0  
2.5  
"1  
1
GS(th)  
DS  
GS D  
I
V
= 0 V, V = "10 V  
mA  
GSS  
DS  
GS  
V
= 60 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
A
DSS  
V
= 60 V, V = 0 V, T = 55_C  
10  
DS  
GS  
J
V
= 10 V, V = 7.5 V  
0.8  
0.5  
GS  
DS  
b
On-State Drain Current  
I
D(on)  
V
= 4.5 V, V = 10 V  
DS  
GS  
V
= 10 V, I = 0.5 A  
1.1  
1.6  
2
4
GS  
GS  
D
b
Drain-Source On-Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 0.2 A  
D
b
Forward Transconductance  
g
V
= 10 V, I = 0.5 A  
550  
0.87  
mS  
V
fs  
DS  
D
Diode Forward Voltage  
V
I
S
= 0.3 A, V = 0 V  
1.3  
0.6  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Q
0.4  
0.11  
0.15  
173  
3.8  
g
V
= 10 V, V = 4.5 V  
GS  
DS  
Q
gs  
Q
gd  
nC  
I
D
^ 0.25 A  
R
W
g
t
10  
15  
20  
15  
d(on)  
Turn-On Time  
Turn-Off Time  
V
D
= 30 V, R = 150 W  
L
t
r
4.8  
DD  
ns  
I
^^ 0.2 A, V  
= 10V  
GEN  
= 10 W  
t
12.8  
9.6  
R
g
d(off)  
t
f
Notes  
a. Pulse test: PW v300 ms duty cycle v2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
1.0  
1.2  
0.9  
0.6  
6 V  
T = −55_C  
J
V
= 10, 7 V  
GS  
5 V  
0.8  
0.6  
0.4  
0.2  
0.0  
25_C  
125_C  
4 V  
3 V  
0.3  
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72705  
S-40247—Rev. A, 16-Feb-04  
www.vishay.com  
2
2N7000KL/BS170KL  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
40  
32  
24  
16  
8
4.0  
V
= 0 V  
GS  
3.5  
3.0  
2.5  
C
iss  
V
= 4.5 V  
GS  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10 V  
GS  
C
oss  
C
rss  
0
0
5
10  
15  
20  
25  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
I
D
− Drain Current (mA)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
7
6
5
4
3
2
1
0
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
V
D
= 10 V  
DS  
V
= 10 V @ 500 mA  
GS  
I
= 250 mA  
V
= 4.5 V  
GS  
@ 200 mA  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
−50 −25  
0
J
25  
50  
75  
100 125 150  
Q
g
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-Source Voltage  
5
4
3
2
1
0
1000  
100  
V
= 0 V  
GS  
T = 125_C  
J
I
D
= 500 mA  
10  
1
T = 25_C  
J
I
D
= 200 mA  
T = −55_C  
J
0
2
4
6
8
10  
0.00  
0.3  
0.6  
0.9  
1.2  
1.5  
V
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
SD  
Document Number: 72705  
S-40247—Rev. A, 16-Feb-04  
www.vishay.com  
3
2N7000KL/BS170KL  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage Variance Over Temperature  
Single Pulse Power, Junction-to-Ambient  
0.4  
20  
16  
12  
0.2  
I
D
= 250 mA  
−0.0  
−0.2  
−0.4  
−0.6  
−0.8  
8
4
0
T
A
= 25_C  
−50 −25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
J
− Junction Temperature (_C)  
Time (sec)  
Safe Operating Area  
10  
I
Limited  
DM  
Limited by r  
DS(on)  
1
0.1  
1 ms  
10 ms  
100 ms  
I
D(on)  
Limited  
1 s  
10 s  
dc  
0.01  
T
= 25_C  
A
Single Pulse  
BV  
DSS  
Limited  
0.001  
0.1  
1
10  
100  
V
− Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
0.02  
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
=350_C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72705  
S-40247—Rev. A, 16-Feb-04  
www.vishay.com  
4

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