BF996SA [VISHAY]
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N.Channel双栅MOS -场效应四极管，耗尽型
| 型号： | BF996SA |
| 厂家： | 
VISHAY |
| 描述： | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
Integrated gate protection diodes
Low noise figure
High cross modulation performance
Low input capacitance
Low feedback capacitance
High AGC-range
2
1
G2
D
S
G1
13 579
94 9279
3
4
BF996S Marking: MH
Plastic case (SOT 143)
12623
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Test Conditions
Type
Symbol
V
DS
Value
20
30
10
200
150
Unit
V
mA
mA
mW
C
I
D
±I
G1/G2SM
T
≤ 60 C
P
tot
amb
T
Ch
Storage temperature range
T
stg
–65 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Document Number 85010
Rev. 3, 20-Jan-99
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1 (8)
BF996S
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
Test Conditions
I = 10 A, –V = –V
Type
Symbol
V
(BR)DS
Min Typ Max Unit
= 4 V
20
V
D
G1S
G2S
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
±I
±I
= 10 mA, V
= 10 mA, V
= V = 0
±V
±V
8
14
14
50
50
18
V
G1S
G2S
G2S
G1S
DS
(BR)G1SS
(BR)G2SS
= V = 0
8
V
DS
±V
±V
= 5 V, V
= 5 V, V
= V = 0
±I
±I
nA
nA
mA
G1S
G2S
G1S
DS
G1SS
= V = 0
DS
G2S
G2SS
Drain current
V
DS
= 15 V, V
= 0, V
= 4 V
BF996S
BF996SA
BF996SB
I
I
I
4
4
9.5
G1S
G2S
DSS
DSS
DSS
10.5 mA
18
2.5
mA
V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
V
= 15 V, V
= 15 V, V
= 4 V, I = 20 A
–V
–V
DS
G2S
G1S
D
G1S(OFF)
= 0, I = 20 A
2.0
V
DS
D
G2S(OFF)
Electrical AC Characteristics
V
DS
= 15 V, I = 10 mA, V
= 4 V, f = 1 MHz , T
= 25 C, unless otherwise specified
D
G2S
amb
Parameter
Test Conditions
Symbol
Min
15
Typ Max Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
21s
18.5
2.2
1.1
25
mS
pF
pF
fF
C
C
2.6
35
issg1
V
= 0, V
= 4 V
G2S
G1S
issg2
C
rss
C
oss
10.8 1.2
25
18
pF
dB
dB
dB
dB
dB
G = 2 mS, G = 0.5 mS, f = 200 MHz
G
G
S
L
ps
G = 3.3 mS, G = 1 mS, f = 800 MHz
S
L
ps
AGC range
Noise figure
V
G2S
= 4 to –2 V, f = 800 MHz
G
ps
40
G = 2 mS, G = 0.5 mS, f = 200 MHz
F
F
1.0
1.8
S
L
G = 3.3 mS, G = 1 mS, f = 800 MHz
S
L
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Document Number 85010
Rev. 3, 20-Jan-99
2 (8)
BF996S
Vishay Telefunken
Common Source S–Parameters
V
DS
, = 15 V , V
= 4 V , Z0 = 50
T
amb
= 25 C, unless otherwise specified
G2S
S11
S21
S12
S22
LOG
MAG
dB
LOG
MAG
dB
LOG
MAG
dB
LOG
MAG
dB
I /mA
D
f/MHz
ANG
deg
ANG
deg
ANG
deg
ANG
deg
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
–0.05
–0.15
–0.43
–0.70
–1.03
–1.33
–1.62
–1.92
–2.21
–2.49
–2.80
–3.07
–3.31
–0.05
–0.16
–0.48
–0.76
–1.11
–1.43
–1.75
–2.07
–2.40
–2.70
–3.03
–3.32
–3.59
–0.05
–0.17
–0.50
–0.81
–1.18
–1.52
–1.86
–2.20
–2.53
–2.86
–3.21
–3.50
–3.80
–8.5
3.24
164.9 –56.84
150.9 –50.57
134.7 –48.51
121.3 –46.98
108.4 –46.40
96.5 –46.40
85.0 –47.02
74.1 –47.53
63.6 –47.81
53.1 –48.52
43.7 –48.53
33.6 –46.95
24.1 –44.44
165.3 –56.24
151.8 –49.97
136.3 –47.91
123.3 –46.48
110.9 –45.91
99.5 –45.91
88.7 –46.53
78.1 –47.13
67.9 –47.41
57.9 –48.21
48.7 –48.43
38.9 –47.04
29.6 –44.54
165.4 –55.74
152.0 –49.47
136.7 –47.41
123.8 –45.98
111.5 –45.41
100.3 –45.41
89.6 –46.13
79.4 –46.63
69.2 –47.00
59.4 –47.91
50.2 –48.33
40.8 –47.04
31.5 –44.53
82.2
–0.08
–0.18
–0.29
–0.44
–0.59
–0.76
–0.91
–1.08
–1.26
–1.45
–1.57
–1.75
–1.92
–0.11
–0.21
–0.33
–0.47
–0.65
–0.81
–0.96
–1.12
–1.32
–1.49
–1.61
–1.79
–1.96
–0.15
–0.24
–0.36
–0.52
–0.68
–0.84
–1.02
–1.16
–1.35
–1.53
–1.66
–1.84
–2.00
–3.4
–7.1
–9.7
–17.7
–24.6
–32.1
–39.2
–45.8
–52.3
–58.7
–64.7
–70.7
–76.6
–82.5
–88.6
–9.0
–18.7
–26.0
–33.7
–41.2
–48.3
–55.1
–61.6
–67.9
–74.2
–80.2
–86.4
–92.3
–9.4
–19.4
–27.1
–35.0
–42.9
–50.3
–57.2
–63.9
–70.4
–76.8
–82.9
–89.0
–95.1
3.63
2.51
2.01
1.45
0.94
0.43
–0.10
–0.59
–1.12
–1.52
–1.93
–2.35
5.19
5.58
4.45
3.95
3.40
2.88
2.39
1.88
1.39
0.90
0.50
0.13
–0.28
6.07
6.44
5.31
4.80
4.23
3.72
3.22
2.72
2.24
1.74
1.34
0.95
0.56
75.6
67.7
62.8
57.8
57.3
58.9
63.3
73.1
83.5
102.1
120.4
131.7
81.9
75.0
67.2
61.8
56.3
55.8
56.7
60.7
69.9
80.0
98.9
118.2
130.5
81.4
74.6
66.4
60.8
55.1
54.4
54.9
58.5
67.3
76.7
95.2
115.3
128.7
–12.3
–15.1
–17.4
–19.7
–22.0
–24.3
–26.2
–28.4
–30.5
–32.7
–3.5
5
–7.2
–9.8
–12.6
–15.3
–17.8
–20.0
–22.4
–24.6
–26.6
–28.8
–31.0
–33.3
–3.6
10
–7.3
–10.0
–12.9
–15.7
–18.0
–20.4
–22.7
–25.0
–27.1
–29.4
–31.6
–33.9
15
1000
1100
1200
1300
Document Number 85010
Rev. 3, 20-Jan-99
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3 (8)
BF996S
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
300
250
200
150
100
50
22
20
18
16
14
12
10
8
5V
4V
3V
2V
1V
V
=15V
DS
0
6
4
2
V
=–1V
G1S
0
0
0
20 40 60 80 100 120 140 160
– Ambient Temperature ( °C )
–1
–0.5
0.0
0.5
1.0
1.5
96 12159
T
amb
12852
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
32
28
24
20
16
12
8
4.0
2V
1.5V
1V
V
=4V
=200mW
G2S
V
V
=15V
DS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
P
tot
=4V
G2S
f=1MHz
0.5V
0
–0.5V
=–1V
4
V
G1S
0
0
2
4
6
8
10 12 14 16
–1
–0.5
0.0
I – Drain Current ( mA )
D
0.5
1.0
1.5
12849
V
– Drain Source Voltage ( V )
12853
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Drain Current
22
3.0
6V 5V 4V
3V
20
18
16
14
12
10
8
V
V
=15V
=0
DS
V
=15V
DS
2.5
2.0
1.5
1.0
0.5
0
2V
1V
G1S
f=1MHz
0.5V
0
6
4
2
V
=–1V
G2S
0
–1
–0.5
0.0
0.5
1.0
1.5
–2
–1
0
1
2
3
4
5
12851
V
– Gate 1 Source Voltage ( V )
12854
V
– Gate 2 Source Voltage ( V )
G2S
G1S
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
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Document Number 85010
Rev. 3, 20-Jan-99
4 (8)
BF996S
Vishay Telefunken
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
18
16
14
12
10
8
f=1300MHz
V
=4V
G2S
f=1MHz
1100MHz
900MHz
700MHz
500MHz
300MHz
100MHz
V
V
=15V
DS
6
=4V
G2S
4
I =10mA
D
f=100...1300MHz
2
0
0
2
4
6
8
10 12 14 16 18 20
0
1
2
3
4
5
6
7
8
9
10
12856
V
– Drain Source Voltage ( V )
12857
Re (y ) ( mS )
11
DS
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 10. Short Circuit Input Admittance
10
0
4V
V
V
=15V
DS
f=200MHz
3V
f=100MHz
300MHz
0
=4V
G2S
2V
–5
–10
–15
–20
–25
f=100...1300MHz
–10
–20
1V
500MHz
0
–0.2V
I =5mA
D
–30
–0.4V
–0.6V
700MHz
900MHz
1100MHz
–40
10mA
15mA
–0.8V
–50
–60
V
=–1V
G2S
1300MHz
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0
– Gate 1 Source Voltage ( V )
–15 –10 –5
0
5
10
15
20
12855
V
12858
Re (y
)
( mS )
G1S
21
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
Figure 11. Short Circuit Forward Transfer Admittance
20
7
4V
3V
f=1300MHz
1100MHz
V
V
=15V
=4V
V
=15V
18
16
14
12
10
8
DS
DS
6
5
4
3
2
1
0
f=1MHz
G2S
2V
I =10mA
D
f=100...1300MHz
900MHz
700MHz
500MHz
1V
6
300MHz
100MHz
0.5
4
2
0.5V
V
=0
G2S
0
0
2
4
6
8
10 12 14 16 18
0.0
1.0
1.5
2.0
( mS )
2.5
3.0
12850
I
– Drain Current ( mA )
12859
Re (y
)
22
D
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Output Admittance
Document Number 85010
Rev. 3, 20-Jan-99
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5 (8)
BF996S
Vishay Telefunken
VDS = 15 V, ID = 10 mA, VG2S = 4 V , Z0 = 50
S11
S12
j
90°
120°
60°
j0.5
j2
150°
1300MHz
30°
j0.2
j5
100
0
0.2
0.5
1
2
5
180°
0.08
0.16
0°
100
–j0.2
–j5
–150°
–30°
1300MHz
–j
–j0.5
–j2
–120°
–60°
12 968
–90°
12 969
Figure 13. Input reflection coefficient
Figure 15. Reverse transmission coefficient
S21
S22
j
90°
120°
60°
j0.5
j2
500
150°
30°
700
300
j0.2
j5
100
1300MHz
1
180°
2
0°
0
0.2
0.5
1
2
5
100
–j0.2
–j5
1300MHz
–150°
–30°
–j0.5
–j2
–120°
–60°
12 971
–j
–90°
12 970
Figure 14. Forward transmission coefficient
Figure 16. Output reflection coefficient
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Document Number 85010
Rev. 3, 20-Jan-99
6 (8)
BF996S
Vishay Telefunken
Dimensions in mm
96 12240
Document Number 85010
Rev. 3, 20-Jan-99
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7 (8)
BF996S
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85010
Rev. 3, 20-Jan-99
8 (8)
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