BF995B [VISHAY]
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管，耗尽型
| 型号： | BF995B |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF995
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
2
1
G2
G1
D
S
13 579
94 9279
3
4
BF995 Marking: MB
Plastic case (SOT 143)
12623
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Test Conditions
Type
Symbol
V
DS
Value
20
30
10
200
150
Unit
V
mA
mA
mW
C
I
D
±I
G1/G2SM
T
≤ 60 C
P
tot
amb
T
Ch
Storage temperature range
T
stg
–55 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Document Number 85009
Rev. 3, 20-Jan-99
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BF995
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
Test Conditions
I = 10 A, –V = –V
Type
Symbol
V
(BR)DS
Min Typ Max Unit
= 4 V
20
V
V
V
D
G1S
G2S
±I
G1S
±I
G2S
= 10 mA, V
= 10 mA, V
= V = 0
±V
±V
8
14
14
G2S
G1S
DS
(BR)G1SS
(BR)G2SS
= V = 0
8
DS
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
±V
±V
= 5 V, V
= 5 V, V
= V = 0
±I
±I
100 nA
100 nA
G1S
G2S
G1S
DS
G1SS
= V = 0
DS
G2S
G2SS
Drain current
V
= 15 V, V
= 0, V
= 4 V
BF995
BF995A
BF995B
I
I
I
4
4
9.5
18
mA
DS
G1S
G2S
DSS
DSS
DSS
10.5 mA
18
3.5
mA
V
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
V
= 15 V, V
= 15 V, V
= 4 V, I = 20 A
–V
–V
DS
G2S
G1S
D
G1S(OFF)
= 0, I = 20 A
3.5
V
DS
D
G2S(OFF)
Electrical AC Characteristics
V
DS
= 15 V, I = 10 mA, V
= 4 V, f = 1 MHz , T
= 25 C, unless otherwise specified
D
G2S
amb
Parameter
Test Conditions
Symbol
Min
12
Typ Max Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
21s
15
3.7
1.6
25
mS
pF
pF
fF
C
C
issg1
V
= 0, V
= 4 V
G2S
G1S
issg2
C
rss
C
oss
1.6
20
50
pF
dB
dB
dB
G = 2 mS, G = 0.5 mS, f = 200 MHz
G
ps
S
L
AGC range
Noise figure
V
G2S
= 4 to –2 V, f = 200 MHz
G
ps
G = 2 mS, G = 0.5 mS, f = 200 MHz
F
1.8
2.5
S
L
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Document Number 85009
Rev. 3, 20-Jan-99
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BF995
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
300
250
200
150
100
50
22
20
18
16
14
12
10
8
V
=15V
DS
V
=5V
f=1MHz
G2S
4V
3V
6
0V
4
2V
1V
2
0
0
0
20 40 60 80 100 120 140 160
– Ambient Temperature ( °C )
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
– Gate 1 Source Voltage ( V )
96 12159
T
amb
96 12162
V
G1S
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Forward Transadmittance vs.
Gate 1 Source Voltage
22
20
18
16
14
12
10
8
4.0
V
=0.6V
G1S
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.4V
0.2V
V
V
=15V
DS
=4V
G2S
f=1MHz
0
–0.2V
6
–0.4V
–0.6V
–0.8V
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
– Gate 1 Source Voltage ( V )
96 12160
V
– Drain Source Voltage ( V )
96 12163
V
G1S
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
24
22
4.0
V
=15V
=10mA
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
V
V
f=1MHz
=15V
=0
DS
DS
V
=0.5V
0V
20
18
16
14
12
10
8
I
G1S
DS
G1S
–0.5V
6
4
2
0
–2 –1
0
1
2
3
4
5
6
–2 –1
0
1
2
3
4
5
6
7
96 12161
V
– Gate 2 Source Voltage ( V )
96 12164
V
– Gate 2 Source Voltage ( V )
G2S
G2S
Figure 3. Forward Transadmittance vs.
Gate 2 Source Voltage
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
Document Number 85009
Rev. 3, 20-Jan-99
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BF995
Vishay Telefunken
3.0
10
5
V
=15V
DS
V
=4V
G2S
V
=4V
G2S
2.5
2.0
1.5
1.0
0.5
0
f=1MHz
f=50...700MHz
f=50MHz
0
I =5mA
10mA
20mA
D
100MHz
200MHz
–5
–10
–15
–20
–25
–30
300MHz
400MHz
500MHz
600MHz
700MHz
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
Re (y ( mS )
96 12165
V
– Drain Source Voltage ( V )
96 12167
)
21
DS
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 9. Short Circuit Forward Transfer Admittance
18
7.0
6.5
6.0
5.5
f=700MHz
f=700MHz
600MHz
16
14
12
10
8
600MHz
I =5mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D
500MHz
500MHz
400MHz
I =20mA
D
400MHz
300MHz
300MHz
200MHz
100MHz
6
V
V
=15V
=4V
V
=15V
DS
DS
V
=4V
G2S
G2S
200MHz
100MHz
4
I =5...20mA
I =5...20mA
D
D
2
f=50...700MHz
f=50...700MHz
0
0
1
2
3
4
5
6
7
8
9
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Re (y ( mS )
96 12166
Re (y
)
( mS )
96 12168
)
22
11
Figure 8. Short Circuit Input Admittance
Figure 10. Short Circuit Output Admittance
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Document Number 85009
Rev. 3, 20-Jan-99
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BF995
Vishay Telefunken
VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50
S11 S12
j
90°
120°
60°
j0.5
j2
150°
30°
j0.2
j5
300
600
700MHz
0
0.2
0.5
1
2
5
180°
0.04
0.08
0°
50
100
–j0.2
–j5
700 MHz
300
–150°
–30°
500
–j0.5
–j2
–120°
–60°
12 920
–j
–90°
12 921
Figure 11. Input reflection coefficient
Figure 13. Reverse transmission coefficient
S21
S22
j
90°
120°
60°
j0.5
j2
30°
400
j0.2
j5
200
700MHz
0.8
50
180°
1.6
0°
0
0.2
0.5
1
2
5
100
300
500
700 MHz
I = 20mA
D
10mA
–j0.2
–j5
5mA
–150°
–j0.5
–j2
–120°
–60°
12 923
–j
–90°
12 922
Figure 12. Forward transmission coefficient
Figure 14. Output reflection coefficient
Document Number 85009
Rev. 3, 20-Jan-99
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BF995
Vishay Telefunken
Dimensions in mm
96 12240
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Document Number 85009
Rev. 3, 20-Jan-99
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BF995
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85009
Rev. 3, 20-Jan-99
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