BF961 [VISHAY]

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管,耗尽型
BF961
元器件型号: BF961
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N沟道双栅MOS -场效应四极管,耗尽型

PDF文件: 总7页 (文件大小:161K)
下载文档:  下载PDF数据表文档文件
型号参数:BF961参数

BF961A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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39 VISHAY

BF961A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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34 VISHAY

BF961A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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14 VISHAY

BF961B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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23 VISHAY

BF961B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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14 VISHAY

BF961B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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18 VISHAY

BF963

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-103

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101 ETC

BF964

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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174 VISHAY

BF964S

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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82 VISHAY

BF964SA

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR

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48 ETC

BF964SA

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 TEMIC

BF964SB

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR

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24 ETC

BF964SB

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 TEMIC

BF965

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103

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137 ETC

BF966

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103

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153 ETC