BC859 [VISHAY]
Small Signal Transistors (PNP); 小信号晶体管（ PNP ）
| 型号： | BC859 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistors (PNP) |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856 THRU BC859
Small Signal Transistors (PNP)
FEATURES
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
SOT-23
♦
♦
.122 (3.1)
.118 (3.0)
Especially suited for automatic insertion in
thick- and thin-film circuits.
.016 (0.4)
Top View
3
♦ These transistors are subdivided into three groups A, B
and C according to their current gain. The type BC856 is
available in groups A and B, however, the types BC857,
BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
1
2
.037(0.95)
.037(0.95)
As complementary types, the NPN transistors
BC846 … BC849 are recommended.
♦
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Ty pe
Dimensions in inches and (millimeters)
Marking
Type
Mar king
BC856A
3A
3B
3E
3F
3G
3J
BC859A
4A
4B
4C
B
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
B
C
BC857A
B
C
BC858A
B
C
3K
3L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
BC856
BC857
–V
–V
–V
80
50
30
V
V
V
CBO
CBO
CBO
BC858, BC859
BC856
BC857
BC858, BC859
–V
–V
–V
80
50
30
V
V
V
CES
CES
CES
BC856
BC857
BC858, BC859
–V
–V
–V
65
45
30
V
V
V
CEO
CEO
CEO
Emitter-Base Voltage
Collector Current
–V
5
V
EBO
–I
–I
–I
100
mA
mA
mA
mA
mW
°C
C
Peak Collector Current
Peak Base Current
Peak Emitter Current
200
CM
BM
200
I
200
EM
Power Dissipation at T = 50 °C
P
3101)
SB
tot
Junction Temperature
T
T
150
j
Storage Temperature Range
–65 to +150
°C
S
4/98
BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at –V = 5 V, –I = 2 mA, f = 1 kHz
CE
C
–
h
h
h
h
h
h
h
h
h
–
–
–
1.6
3.2
6
–
–
220
330
600
2.7
4.5
8.7
18
–
–
–
4.5
8.5
15
30
60
110
Current Gain
Current Gain Group A
fe
–
B
fe
fe
C
–
Input Impedance
Current Gain Group A
ie
ie
ie
kΩ
kΩ
kΩ
µS
µS
µS
B
C
oe
oe
oe
Output Admittance
Current Gain Group A
30
60
B
C
–
Reverse Voltage Transfer Ratio
Current Gain Group A
–4
·
h
h
h
–
–
–
1.5 10
–
–
–
–
–
–
re
re
re
–4
·
2 10
3 10
B
C
–4
·
DC Current Gain
at –V = 5 V, –I = 10 µA
CE
C
–
–
–
Current Gain Group A
h
h
h
–
–
–
90
150
270
–
–
–
FE
FE
FE
B
C
at –V = 5 V, –I = 2 mA
CE
C
–
–
–
h
h
h
110
200
420
180
290
520
220
450
800
Current Gain Group A
FE
FE
FE
B
C
Thermal Resistance Junction to Substrate
Backside
R
–
–
3201)
K/W
K/W
thSB
thJA
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
R
–
–
4501)
at –I = 10 mA, –I = 0.5 mA
–V
–V
–
–
90
250
300
650
mV
mV
C
B
CEsat
CEsat
at –I = 100 mA, –I = 5 mA
C
B
Base Saturation Voltage
at –I = 10 mA, –I = 0.5 mA
–V
–V
–
–
700
900
–
–
mV
mV
C
B
BEsat
BEsat
at –I = 100 mA, –I = 5 mA
C
B
Base-Emitter Voltage
at –V = 5 V, –I = 2 mA
–V
–V
600
–
660
–
750
800
mV
mV
CE
C
BE
BE
at –V = 5 V, –I = 10 mA
CE
C
Collector-Emitter Cutoff Current
at –V = 80 V
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–I
CBO
–I
CBO
–
–
–
–
–
–
–
–
0.2
0.2
0.2
–
–
–
15
15
15
4
4
4
nA
nA
nA
µA
µA
µA
nA
µA
BC856
BC857
CE
at –V = 50 V
CE
at –V = 30 V
BC858, BC859
BC856
CE
at –V = 80 V, T = 125 °C
CE
j
at –V = 50 V, T = 125 °C
BC857
CE
j
at –V = 30 V, T = 125 °C
BC858, BC859
CE
j
–
–
15
5
at –V = 30 V
CB
at –V = 30 V, T = 150 °C
CB
j
Gain-Bandwidth Product
at –V = 5 V, –I = 10 mA, f = 100 MHz
f
T
–
150
–
MHz
CE
C
1) Device on fiberglass substrate, see layout
BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
–
Typ.
–
Max.
6
Unit
pF
Collector-Base Capacitance
C
CBO
at –V = 10 V, f = 1 MHz
CB
Noise Figure
at –V = 5 V, –I = 200 µA, R = 2 kΩ,
f = 1 kHz, ∆f = 200 Hz BC856, BC857, BC858
CE
C
G
F
F
–
–
2
1
10
4
dB
dB
BC859
Noise Figure
at –V = 5 V, –I = 200 µA, R = 2 kΩ,
CE
C
G
F
f = 30…15000 Hz
BC859
–
1.2
4
dB
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
test
thJ A
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859
Collector-base cutoff current
versus junction temperature
nA
BC856...BC859
104
103
-I
CBO
102
10
Test voltage -V
equal to the given
:
CBO
1
maximum value
-V
CEO
typical
maximum
10-1
0
100
200 °C
T
j
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859
Collector saturation voltage
versus collector current
Collector current
versus base-emitter voltage
BC856...BC859
V
0.5
BC856...BC859
mA
102
-V
= 5 V
T CE
-IC -I
B = 20
amb = 25 °C
5
4
3
0.4
2
-V
-IC
CEsat
10
0.3
5
4
3
2
0.2
0.1
0
1
T
=
100 °C
amb
25 °C
5
4
3
2
-50 °C
10-1
102 mA
10-1
2
1
2
10
-I
2
5
5
5
0
0.5
1 V
-V
C
BE
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859
相关型号：
BC859-A
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
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