BC817 [VISHAY]
Small Signal Transistors (NPN); 小信号晶体管（ NPN ）
| 型号： | BC817 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistors (NPN) |
| 文件： | 总5页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817, BC818
Small Signal Transistors (NPN)
FEATURES
SOT-23
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier
applications.
.122 (3.1)
.118 (3.0)
♦
♦
.016 (0.4)
Top View
3
Especially suited for automatic insertion
in thick- and thin-film circuits.
1
2
♦ These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.
.037(0.95) .037(0.95)
♦
As complementary types, the PNP transistors BC807
and BC808 are recommended.
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
.016 (0.4) .016 (0.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
Type
Marking
BC817-16
-25
6A
6B
6C
-40
BC818-16
-25
6E
6F
6G
-40
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Emitter Voltage
BC817
BC818
V
V
50
30
V
V
CES
CES
BC817
BC818
V
V
45
25
V
V
CEO
CEO
Emitter-Base Voltage
Collector Current
V
5
V
EBO
I
I
I
800
mA
mA
mA
mA
mW
°C
C
Peak Collector Current
Peak Base Current
Peak Emitter Current
1000
200
CM
BM
–I
P
1000
3101)
150
EM
Power Dissipation at T = 50 °C
SB
tot
Junction Temperature
T
T
j
Storage Temperature Range
1) Device on fiberglass substrate, see layout
–65 to +150
°C
S
4/98
BC817 THRU BC818
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V = 1 V, I = 100 mA
CE
C
–
–
–
–
–
–
Current Gain Group-16
h
h
h
h
h
h
100
160
250
60
100
170
–
–
–
–
–
–
250
400
600
–
–
–
FE
FE
FE
FE
FE
FE
-25
-40
at V = 1 V, I = 300 mA
-16
-25
-40
CE
C
Thermal Resistance Junction Substrate
Backside
R
R
–
–
3201)
K/W
thSB
Thermal Resistance Junction to Ambient Air
–
–
–
–
4501)
0.7
K/W
V
thJA
Collector Saturation Voltage
V
CEsat
at I = 500 mA, I = 50 mA
C
B
Base-Emitter Voltage
at V = 1 V, I = 300 mA
V
BE
–
–
1.2
V
CE
C
Collector-Emitter Cutoff Current
at V = 45 V
BC817
BC818
I
I
I
–
–
–
–
–
–
100
100
5
nA
nA
CE
CES
CES
CES
at V = 25 V
CE
at V = 25 V, T = 150 °C
A
µ
CE
j
Emitter-Base Cutoff Current
I
–
–
–
–
100
nA
EBO
at V = 4 V
EB
Gain-Bandwidth Product
f
T
100
12
–
MHz
pF
at V = 5 V, I = 10 mA, f = 50 MHz
CE
C
Collector-Base Capacitance
at V = 10 V, f = 1 MHz
C
CBO
CB
1) Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.06 (1.5)
Dimensions in inches (millimeters)
.20 (5.1)
Layout for R
test
th J A
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
RATINGS AND CHARACTERISTIC CURVES BC817, BC818
RATINGS AND CHARACTERISTIC CURVES BC817, BC818
RATINGS AND CHARACTERISTIC CURVES BC817, BC818
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