BC807 [VISHAY]

Small Signal Transistors (PNP); 小信号晶体管（ PNP ）

BC807


型号：	BC807
厂家：	VISHAY
描述：	Small Signal Transistors (PNP) 小信号晶体管（ PNP ）晶体晶体管
文件：	总5页 (文件大小：231K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC807, BC808

Small Signal Transistors (PNP)

SOT-23

FEATURES

♦

PNP Silicon Epitaxial Planar Transistors

for switching, AF driver and amplifier

applications.

.122 (3.1)

.118 (3.0)

.016 (0.4)

Top View

3

Especially suited for automatic insertion

in thick- and thin-film circuits.

♦

♦

These transistors are subdivided into three groups -16,

-25 and -40 according to their current gain.

1

2

.037(0.95)

.037(0.95)

♦

As complementary types, the NPN transistors BC817

and BC818 are recommended.

.102 (2.6)

.094 (2.4)

MECHANICAL DATA

.016 (0.4) .016 (0.4)

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

Marking code

Dimensions in inches and (millimeters)

Pin configuration

1 = Base, 2 = Emitter, 3 = Collector.

Type

Marking

BC807-16

-25

5A

5B

5C

-40

BC808-16

-25

5E

5F

5G

-40

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Value

Unit

Collector-Emitter Voltage

Collector-Emitter Voltage

BC807

BC808

–V

–V

50

30

V

V

CES

CES

BC807

BC808

–V

–V

45

25

V

V

CEO

CEO

Emitter-Base Voltage

Collector Current

–V

5

V

EBO

–I

–I

–I

500

mA

mA

mA

mA

mW

°C

C

Peak Collector Current

Peak Base Current

Peak Emitter Current

1000

200

CM

BM

I

1000

310¹⁾

150

EM

Power Dissipation at T = 50 °C

P

tot

SB

Junction Temperature

T

T

j

Storage Temperature Range

¹⁾Device on fiberglass substrate, see layout

–65 to +150

°C

S

4/98

BC807, BC808

ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at –V = 1 V, –I = 100 mA

CE

C

–

–

–

–

–

–

h

h

h

h

h

h

100

160

250

60

100

170

–

–

–

–

–

–

250

400

600

–

–

–

Current Gain Group-16

FE

FE

FE

FE

FE

FE

-25

-40

at –V = 1 V, –I = 300 mA

-16

-25

-40

CE

C

Thermal Resistance Junction Substrate

Backside

R

–

–

320¹⁾

K/W

thSB

Thermal Resistance Junction to Ambient Air

Collector Saturation Voltage

R

–

–

–

–

450¹⁾

0.7

K/W

V

thJA

–V

–V

CEsat

at –I = 500 mA, –I = 50 mA

C

B

Base-Emitter Voltage

at –V = 1 V, –I = 300 mA

–

–

1.2

V

BE

CE

C

Collector-Emitter Cutoff Current

at –V = 45 V

BC807

BC808

–I

CES

–I

CES

–I

CES

–

–

–

–

–

–

100

100

5

nA

nA

µA

CE

at –V = 25 V

CE

at –V = 25 V, T = 150 °C

CE

j

Emitter-Base Cutoff Current

–I

EBO

–

–

100

nA

at –V = 4 V

EB

Gain-Bandwidth Product

f

–

100

12

–

MHz

pF

T

at –V = 5 V, –I = 10 mA, f = 50 MHz

CE

C

Collector-Base Capacitance

at –V = 10 V, f = 1 MHz

C

CBO

CB

¹⁾Device on fiberglass substrate, see layout

.30 (7.5)

.12 (3)

.04 (1)

.08 (2)

.04 (1)

.08 (2)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.06 (1.5)

Dimensions in inches (millimeters)

.20 (5.1)

Layout for R

tes t

thJ A

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

RATINGS AND CHARACTERISTIC CURVES BC807, BC808

RATINGS AND CHARACTERISTIC CURVES BC807, BC808

RATINGS AND CHARACTERISTIC CURVES BC807, BC808

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