BC338-16/E7 [VISHAY]
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN;
| 型号： | BC338-16/E7 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总7页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC337 / BC338
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
C 1
• NPN Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially
suited for AF-driver stages and low power output
stages.
2
B
• These types are also available subdivided into
three groups - 16, - 25, and - 40, according to their
DC current gain. As complementary types, the
PNP transistors BC327 and BC328 are recom-
mended.
3
2
1
E 3
18855_1
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
Type differentiation
hFE, 160 @ 100 mA
Ordering code
Remarks
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
BC337-16-BULK or BC337-16-TAP
Bulk / Ammopack
h
h
h
h
FE, 250 @ 100 mA
FE, 400 @ 100 mA
FE, 130 @ 300 mA
FE, 200 @ 300 mA
BC337-25-BULK or BC337-25-TAP
BC337-40-BULK or BC337-40-TAP
BC338-16-BULK or BC338-16-TAP
BC338-25-BULK or BC338-25-TAP
BC338-40-BULK or BC338-40-TAP
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
hFE, 320 @ 300 mA
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
50
Unit
V
Collector - emitter voltage
BC337
VCES
VCES
VCEO
VCEO
VEBO
IC
BC338
BC337
BC338
30
45
25
5
V
V
V
Emitter - base voltage
Collector current
V
800
1
mA
A
Collector peak current
Base current
ICM
IB
100
mA
mW
6251)
Power dissipation
Tamb = 25 ° C
Ptot
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
1
BC337 / BC338
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
2001)
Unit
Thermal resistance junction to
ambient air
RθJA
°C/W
Junction temperature
Tj
150
°C
°C
Storage temperature range
TS
- 65 to + 150
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
hFE
Min
100
Typ
160
Max
Unit
DC current gain
(current gain group - 16)
VCE = 1 V, IC = 100 mA
BC337-16
250
400
630
DC current gain
(current gain group - 25)
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 100 mA
VCE = 1 V, IC = 300 mA
VCE = 1 V, IC = 300 mA
VCE = 1 V, IC = 300 mA
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
hFE
hFE
hFE
hFE
hFE
160
250
60
250
400
130
200
320
DC current gain
(current gain group - 40)
DC current gain
(current gain group - 16)
DC current gain
(current gain group - 25)
100
170
DC current gain
(current gain group - 40)
Collector-emitter cut-off current VCE = 45 V
BC337
BC338
BC337
BC338
BC337
ICES
ICES
2
2
100
100
10
nA
nA
µA
µA
V
V
V
V
CE = 25 V
CE = 45 V, Tamb = 125 °C
CE = 25 V, Tamb = 125 °C
ICES
ICES
10
Collector - emitter breakdown
voltage
I
C = 10 mA
V(BR)CEO
45
BC338
BC337
BC338
V(BR)CEO
V(BR)CES
V(BR)CES
V(BR)EBO
20
50
30
5
V
V
V
V
I
I
C = 0.1 mA
E = 0.1 mA
Emitter - base breakdown
voltage
Collector saturation voltage
Base - emitter voltage
IC = 500 mA, IB = 50 mA
CE = 1 V, IC = 300 mA
VCEsat
VBE
0.7
1.2
V
V
V
Electrical AC Characteristics
Parameter
Test condition
Symbol
fT
Min
Typ
100
Max
Unit
Gain - bandwidth product
VCE = 5 V, IC = 10 mA,
f = 50 MHz
MHz
Collector - base capacitance
V
CB = 10 V, f = 1 MHz
CCBO
12
pF
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2
Document Number 85112
Rev. 1.2, 02-Nov-04
BC337 / BC338
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1
0.5
0.4
typical
limits
at T
= 25°C
amb
0.8
I
I
C
B
= 10
0.6
0.4
0.2
0
0.3
0.2
0.1
0
25°C
150°C
- 50°C
0
20 40 60 80 100 120 140 160180 200
0.1
1
10
100
1000
18845
T
amb
- Ambient Temperature ( °C )
I
- Collector Current ( mA )
18848
C
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Collector Saturation Voltage vs. Collector Current
1000
1000
25°C
T
= 25°
amb
-50°C
f = 20 MHz
150°C
100
V
= 5 V
CE
typical
limits
at T
1 V
10
= 25°C
100
amb
1
0.1
10
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
1
10
100
1000
18846
V
BE
- Base-Emitter Voltage ( V )
18849
I
C
- Collector Current ( mA )
Figure 2. Collector Current vs. Base-Emitter Voltage
Figure 5. Gain-Bandwidth Product vs. Collector Current
3
1000
10
150°C
2
10
0.5
0.2
0.1
0.05
- 50°C
100
10
T
amb
= 25°C
0.02
0.01
0.005
t
p
1
ν
= t /T
p
P
I
ν
= 0
V
CE
= 1 V
T
-1
10
10
-6
-5
-4
-3
-2
-1
2
0.1
1
10
100
1000
10
10 10 10 10 10
1
10 10
18847
t
- Pulse Length ( s )
18850
I
- Collector Current ( mA )
p
C
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. DC Current Gain vs. Collector Current
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
3
BC337 / BC338
Vishay Semiconductors
VISHAY
2
500
400
300
typical
limits
0.9
0.85
at T
= 25°C
25°C
amb
I
I
C
B
= 10
0.8
1
- 50°C
200
100
0
0.75
150°C
V
= 0.7 V
BE
0
0.1
1
10
100
1000
0
0.4
V - Collector Emitter Voltage ( V )
CE
0.8
1.2
1.6
2
I
- Collector Current ( mA )
18851
C
18854
Figure 7. Base Saturation Voltage vs. Collector Current
Figure 10. Collector Current vs. Collector Emitter Voltage
100
0.35
0.3
80
0.25
60
0.2
0.15
40
0.1
= 0.05 mA
20
I
B
0
0
2
4
6
8
10 12 14 16 18 20
V
CE
- Collector Emitter Voltage ( V )
18852
Figure 8. Collector Current vs. Collector Emitter Voltage
500
3.2
2.8
1.8
2.4
2
400
300
200
100
0
1.6
1.4
1.2
1
0.8
0.6
0.4
I
= 0.2 mA
1.6 2
B
0
0.4
0.8
1.2
V
CE
- Collector Emitter Voltage ( V )
18853
Figure 9. Collector Current vs. Collector Emitter Voltage
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Document Number 85112
Rev. 1.2, 02-Nov-04
4
BC337 / BC338
Vishay Semiconductors
VISHAY
Packaging for Radial Taping
Dimensions in mm
± 2
±2.7 ±±
± ±
Vers. Dim. "H"
27 ± 0.5
FSZ
0.9 max
5.08 ± 0.7
+ 0.6
4
± 0.2
2.54
- 0.±
6.3 ± 0.7
±2.7 ± 0.2
Measure limit over 20 index - holes: ± ±
±8787
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
5
BC337 / BC338
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
4.6 (0.181)
3.6 (0.142)
max. 0.55 (0.022)
2.5 (0.098)
Bottom
View
18776
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6
Document Number 85112
Rev. 1.2, 02-Nov-04
BC337 / BC338
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85112
Rev. 1.2, 02-Nov-04
www.vishay.com
7
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