BAV99GS08 [VISHAY]
0.15A, 70V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3;
| 型号： | BAV99GS08 |
| 厂家： | 
VISHAY |
| 描述： | 0.15A, 70V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV99
Vishay Semiconductors
VISHAY
Dual Switching Diode
\
3
Features
• Fast switching speed
• High conductance
1
2
• Surface mount package ideally suited for auto-
matic insertion
17435
• Connected in series
Marking: KJE, JE
Packaging Codes/Options:
Mechanical Data
Case: SOT-23 Plastic Package
E8/10 K per 13" reel (8 mm tape), 30 K/box
E9/3K per 7" reel (8 mm tape), 30 K/box
Weight: approx. 8 mg
Parts Table
Part
Type differentiation
Dual Serial
Ordering code
BAV99-GS08
Marking
Remarks
Package
SOT-23
BAV99
JE
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VRM
Value
Unit
V
Non repetitive peak reverse voltage
100
70
Repetitive peak reverse voltage = Working
peak reverse voltage = DC Blocking voltage
VRRM
VRWM
VR
=
=
V
Peak forward surge current
Average forward current
tp = 1s
IFSM
IFSM
IFAV
1
A
A
tp = 1 µs
4.5
150
half wave rectification with resistive load and
f ≥ 50 MHz, on ceramic substrate
10 mm x 8 mm x 0.7 mm
mA
Forward current
on ceramic substrate
10 mm x 8 mm x 0.7 mm
IF
250
300
mA
Power dissipation
on ceramic substrate
Ptot
mW
10 mm x 8 mm x 0.7 mm
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
RthJA
Value
Unit
K/W
on ceramic substrate 10 mm x 8
mm x 0.7 mm
430
Junction and storage temperature
range
Tj = Tstg
- 55 to + 150
°C
Document Number 85718
Rev. 6, 19-Feb-03
www.vishay.com
1
BAV99
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VF
Max
Unit
mV
Forward voltage
Reverse current
IF = 1 mA
IF = 10 mA
715
855
1
VF
VF
VF
IR
mV
V
IF = 50 mA
IF = 150 mA
1.25
2.5
50
V
VR = 70 V
µA
µA
µA
pF
ns
VR = 70 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
VR = 0, f = 1 MHz
IR
IR
30
Diode capacitance
CD
trr
1.5
6
Reverse recovery time
IF = 10 mA to IR = 1 mA, VR = 6 V,
RL = 100 Ω
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
1000
100
T =100°C
j
10
T =25°C
j
1
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
V
F
– Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 85718
Rev. 6, 19-Feb-03
BAV99
Vishay Semiconductors
VISHAY
Package Dimensions in mm
top view
Document Number 85718
Rev. 6, 19-Feb-03
www.vishay.com
3
BAV99
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85718
Rev. 6, 19-Feb-03
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