BAV99-GS18 [VISHAY]
Rectifier Diode, 2 Element, 0.15A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3;
| 型号： | BAV99-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 2 Element, 0.15A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总4页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV99
Vishay Semiconductors
VISHAY
Small Signal Switching Diode, Dual
Features
• Fast switching speed
3
• High conductance
• Surface mount package ideally suited for auto-
matic insertion
1
2
18109
• Connected in series
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Marking
Remarks
Tape and Reel
BAV99
BAV99-GS18 or BAV99-GS08
JE
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
100
Unit
Non repetitive peak reverse
voltage
V
V
RM
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
V
= V
= V
R
70
V
RRM
RWM
Peak forward surge current
t = 1s
I
I
1
A
A
p
FSM
FSM
t = 1 µs
4.5
150
p
Average forward current
half wave rectification with
resistive load and f ≥ 50 MHz, on
ceramic substrate
I
mA
FAV
10 mm x 8 mm x 0.7 mm
Forward current
on ceramic substrate
10 mm x 8 mm x 0.7 mm
I
250
300
mA
F
Power dissipation
on ceramic substrate
P
mW
tot
10 mm x 8 mm x 0.7 mm
Document Number 85718
Rev. 1.7, 08-Jul-04
www.vishay.com
1
BAV99
Vishay Semiconductors
VISHAY
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
430
Unit
K/W
Junction ambient
on ceramic substrate
R
thJA
10 mm x 8 mm x 0.7 mm
Junction and storage
temperature range
T = T
- 55 to + 150
°C
j
stg
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
= 1 mA
Symbol
Min
Typ.
Max
715
Unit
mV
Forward voltage
I
I
I
I
V
V
V
V
F
F
F
F
F
F
F
F
= 10 mA
= 50 mA
= 150 mA
855
1
mV
V
1.25
2.5
50
30
1.5
6
V
Reverse current
V
V
V
V
= 70 V
I
I
I
µA
µA
µA
pF
ns
R
R
R
R
R
= 70 V, T = 150 °C
j
R
R
= 25 V, T = 150 °C
j
Diode capacitance
= 0, f = 1 MHz
C
D
Reverse recovery time
I
= 10 mA to I = 1 mA,
t
rr
F
R
V
= 6 V, R = 100 Ω
L
R
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
°
= 100 C
T
j
10
°
125 C
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- Forward Voltage ( V )
14356
V
F
Figure 1. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 85718
Rev. 1.7, 08-Jul-04
BAV99
Vishay Semiconductors
VISHAY
Layout for R
test
thJA
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85718
Rev. 1.7, 08-Jul-04
www.vishay.com
3
BAV99
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85718
Rev. 1.7, 08-Jul-04
相关型号：
BAV99-T1-LF
Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
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