BAV99/E9 [VISHAY]

Rectifier Diode, 2 Element, 0.15A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3;
BAV99/E9
型号: BAV99/E9
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 2 Element, 0.15A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3

光电二极管
文件: 总2页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAL99, BAV99  
Small-Signal Diodes  
TO-236AB (SOT-23)  
Mounting Pad Layout  
.122 (3.1)  
.110 (2.8)  
0.037 (0.95)  
0.037 (0.95)  
.016 (0.4)  
Top View  
3
0.079 (2.0)  
1
2
0.035 (0.9)  
.037(0.95)  
.037(0.95)  
0.031 (0.8)  
Features  
Silicon Epitaxial Planar Diode  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Fast switching diodes, especially suited for  
automatic insertion  
Dimensions in inches and (millimeters)  
This diode is also available in other configurations  
including a dual common anode with type  
designation BAW56  
Top View  
Mechanical Data  
Top View  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
BAL99  
Marking: JF  
BAV99  
Marking: JE  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VR, VRM  
IF  
Value  
Unit  
V
Reverse Voltage, Peak Reverse Voltage  
Forward Current (continuous)  
70  
250  
mA  
Non-Repetitive Peak Forward Current  
at t = 1µs  
at t = 1ms  
at t = 1s  
IFSM  
IFSM  
IFSM  
2
1
A
A
A
.
0 5  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
RθJA  
Tj  
350(1)  
430(1)  
mW  
°C/W  
°C  
150  
Storage Temperature Range  
TS  
–65 to +150  
°C  
Note:  
(1) Device on Fiberglass Substrate, see layout on second page  
5/16/00  
BAL99, BAV99  
Small-Signal Diodes  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
at IF = 1mA  
0.715  
0.855  
1.0  
V
V
V
V
at IF = 10mA  
at IF = 50mA  
at IF = 150mA  
Forward Voltage  
VF  
1.25  
VR = 70V  
VR = 70V, TJ = 150°C  
VR = 25V, TJ = 150°C  
2.5  
100  
30  
µA  
µA  
µA  
Leakage Current  
Capacitance  
IR  
VF = VR = 0  
f = 1MHz  
Ciss  
trr  
1.5  
6
pF  
ns  
IF = 10mA, IR = 10mA  
Irr = 1mA, RL = 100Ω  
Reverse Recovery Time  
(1) Device on fiberglass substrate, see layout  
Layout for R  
test  
thJA  
Thickness: Fiberglass 0.059 in. (1.5 mm)  
0.30 (7.5)  
0.12 (3)  
Copper leads 0.012 in. (0.3 mm)  
.04 (1)  
.08 (2)  
.04 (1)  
.08 (2)  
0.59 (15)  
0.03 (0.8)  
0.47 (12)  
0.2 (5)  
Dimensions in inches (millimeters)  
0.06 (1.5)  
0.20 (5.1)  

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