BAV303 [VISHAY]
Silicon Epitaxial Planar Diodes; 硅外延平面二极管
| 型号： | BAV303 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Epitaxial Planar Diodes |
| 文件： | 总5页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV300...BAV303
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
96 12315
Applications
General purposes
Absolute Maximum Ratings
T = 25 C
j
Parameter
Peak reverse voltage
Test Conditions
Type
Symbol
Value
60
120
200
250
50
100
150
200
Unit
V
V
V
V
V
V
V
V
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
V
RRM
V
RRM
V
RRM
V
RRM
Reverse voltage
V
R
V
R
V
R
V
R
Forward current
I
250
1
625
175
mA
A
mA
C
F
Peak forward surge current
Forward peak current
Junction temperature
Storage temperature range
t =1s, T =25 C
f=50Hz
I
FSM
p
j
I
FM
T
T
stg
j
–65...+175
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1
Symbol
R
thJA
Value
500
Unit
K/W
2
35 m copper clad, 0.9 mm copper area per
electrode
Document Number 85545
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BAV300...BAV303
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Reverse current
Test Conditions
I =100mA
Type
Symbol Min
Typ Max Unit
V
F
1
V
nA
nA
nA
nA
A
F
V =50V
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
I
I
I
I
I
I
I
I
100
100
100
100
15
R
R
V =100V
R
R
R
R
R
R
R
R
V =150V
R
V =200V
R
T =100 C, V = 50V
j
R
T =100 C, V = 100V
15
A
j
R
T =100 C, V = 150V
15
A
j
R
T =100 C, V = 200V
15
A
j
R
Breakdown voltage
Diode capacitance
I =100 A, t /T=0.01,
V
(BR)
V
(BR)
V
(BR)
V
(BR)
60
V
V
V
V
R
p
t =0.3ms
p
120
200
250
V =0, f=1MHz
R
C
D
1.5
5
pF
Differential forward resistance I =10mA
r
F
f
Reverse recovery time
I =I =30mA, i =3mA,
t
rr
50
ns
F
R
R
R =100
L
Characteristics (Tj = 25 C unless otherwise specified)
1000
100
10
1000
100
10
T =25°C
j
Scattering Limit
Scattering Limit
1
1
V =V
R
RRM
0.1
0.01
0.1
200
2.0
0
40
80
120
160
0
0.4
0.8
1.2
1.6
94 9084
T – Junction Temperature ( °C )
j
94 9085
V – Forward Voltage ( V )
F
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85545
Rev. 3, 01-Apr-99
BAV300...BAV303
Vishay Telefunken
1000
100
10
T =25°C
j
1
100
0.1
1
10
94 9089
I – Forward Current ( mA )
F
Figure 3. Differential Forward Resistance vs.
Forward Current
0.71
1.3
Reflow Soldering
1.27
1.2
0.152
9.9
0.6
1.2
2.4
0.6
0.355
25
Figure 5. Recommended foot pads (in mm)
10
Wave Soldering
2.5
1.4
24
95 10329
0.7
1.4
2.8
0.7
Figure 4. Board for R
definition (in mm)
Figure 6. Recommended foot pads (in mm)
thJA
Document Number 85545
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BAV300...BAV303
Vishay Telefunken
Dimensions in mm
96 12072
www.vishay.de • FaxBack +1-408-970-5600
4 (5)
Document Number 85545
Rev. 3, 01-Apr-99
BAV300...BAV303
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85545
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
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