BAV21WS-E3-08 [VISHAY]
DIODE GEN PURP 200V 250MA SOD323;
| 型号： | BAV21WS-E3-08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE GEN PURP 200V 250MA SOD323 |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
DESIGN SUPPORT TOOLS click logo to get started
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
TYPE
CIRCUIT
PART
ORDERING CODE
TYPE MARKING
REMARKS
Tape and reel
Tape and reel
Tape and reel
DIFFERENTIATION
CONFIGURATION
BAV19WS-E3-08 or BAV19WS-E3-18
BAV19WS-HE3-08 or BAV19WS-HE3-18
BAV19WS
BAV20WS
BAV21WS
VR = 100 V
A8
A9
AA
Single
BAV20WS-E3-08 or BAV20WS-E3-18
BAV20WS-HE3-08 or BAV20WS-HE3-18
V
V
R = 150 V
R = 200 V
Single
Single
BAV21WS-E3-08 or BAV21WS-E3-18
BAV21WS-HE3-08 or BAV21WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
100
UNIT
BAV19WS
BAV20WS
BAV21WS
BAV19WS
BAV20WS
BAV21WS
VR
V
V
Continuous reverse voltage
VR
150
VR
200
V
VRRM
VRRM
VRRM
IF
120
V
Repetitive peak reverse voltage
Forward continuous current (1)
200
V
250
V
250
mA
Rectified current (average) half wave
IF(AV)
200
mA
rectification with resistive load (1)
Repetitive peak forward current (1)
Surge forward current
f ≥ 50 Hz, θ = 180°
t < 1 s, TJ = 25 °C
IFRM
IFSM
Ptot
625
1
mA
A
Power dissipation
200
mW
Note
(1)
Valid provided that leads are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
RthJL
Tj
VALUE
625
UNIT
K/W
K/W
°C
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Junction temperature
450
150
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +150
°C
Top
°C
Rev. 2.2, 12-Jul-17
Document Number: 85726
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1
UNIT
V
IF = 100 mA
VF
VF
IR
Forward voltage
IF = 200 mA
1.25
100
15
V
V
R = 100 V
R = 100 V, TJ = 100 °C
R = 150 V
R = 150 V, TJ = 100 °C
R = 200 V
BAV19WS
BAV19WS
BAV20WS
BAV20WS
BAV21WS
BAV21WS
nA
μA
nA
μA
nA
μA
Ω
V
V
V
IR
V
IR
100
15
Reverse leakage current
IR
V
IR
100
15
R = 200 V, TJ = 100 °C
IF = 10 mA
IR
Dynamic forward resistance
Diode capacitance
rf
5
V
R = 0, f = 1 MHz
IF = 30 mA, IR = 30 mA,
R = 3 mA, RL = 100 Ω
CD
1.5
50
pF
Reverse recovery time
trr
ns
i
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
250
T = 100 °C
j
100
200
150
100
50
10
1
25 °C
0.1
0.01
0
0
0.2
0.4
0.6
0.8
1
0
20 40 60 80 100 120 140 160 180 200
- Ambient Temperature (°C)
T
amb
18858
V
F
- Forward Voltage (V)
18864
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3
100
0.2
DC current I
F
10
Current (rectif.) I
O
0.1
0
1
1
10
100
0
30
60
90
120
150
18861
I
F
- Forward Current (mA)
18859
T
amb
- Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.2, 12-Jul-17
Document Number: 85726
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
1000
100
10
2.0
°
T = 25 C
j
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Reverse Voltage
BAV19WS R = 100 V
BAV20WS VR = 150 V
BAV21WS VR = 200 V
V
1
0.2
0
0.1
0.1
1
10
100
0
40
80
120
160
200
18862_3
Tj - Junction Temperature (°C)
V
R
- Reverse Voltage (V)
18863
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
1.60 [0.063]
Cathode bar
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
0.8 [0.031]
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 2.2, 12-Jul-17
Document Number: 85726
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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