BAV20W-V-GS08 [VISHAY]

Small Signal Switching Diodes, High Voltage; 小信号开关二极管,高压
BAV20W-V-GS08
型号: BAV20W-V-GS08
厂家: VISHAY    VISHAY
描述:

Small Signal Switching Diodes, High Voltage
小信号开关二极管,高压

小信号开关二极管 高压
文件: 总6页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV19W-V / 20W-V / 21W-V  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
Features  
• Silicon Epitaxial Planar Diodes  
• For general purpose  
e3  
• These diodes are also available in other  
case styles including: the DO-35 case  
with the type designations BAV19 to BAV21, the  
MiniMELF case with the type designations  
BAV100 to BAV103, the SOT-23 case with the  
type designations BAS19 to BAS21, and the  
SOD-323 case with type designations BAV19WS-  
V to BAV21WS-V.  
17431  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123 Plastic case  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Type differentiation  
VR = 100 V  
Ordering code  
Marking  
Remarks  
BAV19W-V  
BAV19W-V-GS18 or BAV19W-V-GS08  
A8  
A9  
AA  
Tape and Reel  
BAV20W-V  
BAV21W-V  
V
V
R = 150 V  
R = 200 V  
BAV20W-V-GS18 or BAV20W-V-GS08  
BAV21W-V-GS18 or BAV21W-V-GS08  
Tape and Reel  
Tape and Reel  
Document Number 85725  
Rev. 1.2, 22-Jul-05  
www.vishay.com  
1
BAV19W-V / 20W-V / 21W-V  
Vishay Semiconductors  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
VR  
Value  
100  
Unit  
V
Continuous reverse voltage  
BAV19W-V  
BAV20W-V  
BAV21W-V  
BAV19W-V  
BAV20W-V  
BAV21W-V  
VR  
VR  
150  
200  
120  
200  
250  
V
V
Repetitive peak voltage  
VRRM  
VRRM  
VRRM  
IF  
V
V
V
2501)  
2001)  
DC Forward current  
T
amb = 25 °C  
amb = 25 °C  
mA  
mA  
Rectified current (average) half  
wave rectification with resist.  
load  
T
IF(AV)  
6251)  
Repetitive peak forward current f 50 Hz, θ = 180 °,  
amb = 25 °C  
IFRM  
mA  
T
Surge forward current  
Power dissipation  
t < 1 s, Tj = 25 °C  
Tamb = 25 °C  
IFSM  
Ptot  
1
A
4101)  
mW  
1) Valid provided that leads are kept at ambient temperature  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
3751)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
1501)  
- 65 to + 1501)  
Junction temperature  
Tj  
°C  
°C  
Storage temperature range  
TS  
1) Valid provided that leads are kept at ambient temperature  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Forward voltage  
Test condition  
Part  
Symbol  
VF  
Min  
Typ.  
Max  
Unit  
V
IF = 100 mA  
IF = 200 mA  
1.00  
1.25  
100  
15  
VF  
IR  
V
Leakage current  
V
V
V
V
V
V
R = 100 V  
BAV19W-V  
BAV19W-V  
BAV20W-V  
BAV20W-V  
BAV21W-V  
BAV21W-V  
nA  
µA  
nA  
µA  
nA  
µA  
R = 100 V, Tj = 100 °C  
R = 150 V  
IR  
IR  
100  
15  
R = 150 V, Tj = 100 °C  
R = 200 V  
IR  
IR  
100  
15  
R = 200 V, Tj = 100 °C  
IR  
Dynamic forward resistance  
Diode capacitance  
IF = 10 mA  
R = 0, f = 1 MHz  
rf  
5
V
Ctot  
trr  
1.5  
pF  
ns  
Reverse recovery time  
IF = 30 mA, IR = 30 mA,  
50  
Irr = 3 mA, RL = 100 Ω  
www.vishay.com  
2
Document Number 85725  
Rev. 1.2, 22-Jul-05  
BAV19W-V / 20W-V / 21W-V  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1000  
100  
100  
°
T = 100  
j
C
10  
1
°
25  
C
10  
0.1  
0.01  
1
0
0.2  
0.4  
0.6  
0.8  
1
1
10  
100  
18861  
I
F
- Forward Current ( mA )  
18858  
V
F
- Forward Voltage ( V )  
Figure 1. Forward Current vs. Forward Voltage  
Figure 4. Dynamic Forward Resistance vs. Forward Current  
1000  
100  
0.3  
0.2  
DC current I  
F
10  
Current (rectif.) I  
O
Reverse Voltage  
BAV100 V = 50 V  
0.1  
0
R
BAV101 V = 100 V  
1
R
BAV102 V = 150 V  
R
BAV103 V = 200 V  
R
0.1  
0
20 40 60 80 100 120 140 160 180 200  
0
30  
60  
90  
120  
150  
18862  
T - Junction Temperature ( ° C )  
j
18859  
T
amb  
- Ambient Temperature ( °C )  
Figure 2. Admissible Forward Current vs. Ambient Temperature  
Figure 5. Leakage Current vs. Junction Temperature  
500  
400  
300  
200  
100  
2.0  
°
T = 25  
j
C
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.1  
0
0
20 40 60 80 100 120 140 160 180 200  
1
10  
100  
18860  
T
amb  
- Ambient Temperature ( °C )  
V
R
- Reverse Voltage ( V )  
18863  
Figure 3. Admissible Power Dissipation vs. Ambient Temperature  
Figure 6. Capacitance vs. Reverse Voltage  
Document Number 85725  
Rev. 1.2, 22-Jul-05  
www.vishay.com  
3
BAV19W-V / 20W-V / 21W-V  
Vishay Semiconductors  
Package Dimensions in mm (Inches)  
1.35 (0.053) max.  
0.25 (0.010) min.  
0.15 (0.006) max.  
ISO Method E  
0.1 (0.004) max.  
0.55 (0.022)  
Mounting Pad Layout  
Cathode Band  
1.40 (0.055)  
0.72 (0.028)  
1.70 (0.067)  
1.40 (0.055)  
17432  
www.vishay.com  
4
Document Number 85725  
Rev. 1.2, 22-Jul-05  
BAV19W-V / 20W-V / 21W-V  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85725  
Rev. 1.2, 22-Jul-05  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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