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BAV19WS-GS08 [VISHAY]

Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, PLASTIC PACKAGE-2;
BAV19WS-GS08
型号： BAV19WS-GS08
厂家： VISHAY    VISHAY
描述：

Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, PLASTIC PACKAGE-2
文件： 总5页 (文件大小：86K)
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BAV19WS / 20WS / 21WS  
VISHAY  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
Features  
• Silicon Epitaxial Planar Diodes  
• For general purpose  
• These diodes are also available in other case  
styles including: the DO-35 case with the type des-  
ignation BAV19 - BAV21, the MiniMELF case with  
the type designation BAV100 - BAV103, the  
SOT-23 case with the type designation BAS19 -  
BAS21 and the SOD-123 case with the type des-  
ignation BAV19W - BAV21W  
17431  
Mechanical Data  
Case: SOD-323 Plastic case  
Weight: approx. 5.0 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Type differentiation  
Ordering code  
Marking  
Remarks  
BAV19WS  
V
V
V
= 100 V  
= 150 V  
= 200 V  
BAV19WS-GS18 or BAV19WS-GS08  
A8  
A9  
AA  
Tape and Reel  
R
R
R
BAV20WS  
BAV21WS  
BAV20WS-GS18 or BAV20WS-GS08  
BAV21WS-GS18 or BAV21WS-GS08  
Tape and Reel  
Tape and Reel  
Document Number 85726  
Rev. 1.3, 08-Jul-04  
www.vishay.com  
1
BAV19WS / 20WS / 21WS  
Vishay Semiconductors  
VISHAY  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
Value  
100  
Unit  
V
Continuous reverse voltage  
Repetitive peak reverse voltage  
DC Forward current  
BAV19WS  
V
V
V
R
R
R
BAV20WS  
BAV21WS  
BAV19WS  
BAV20WS  
BAV21WS  
150  
200  
120  
200  
250  
V
V
V
V
V
V
RRM  
RRM  
RRM  
V
V
1)  
T
= 25 °C  
I
mA  
A
amb  
F
250  
1)  
Rectified current (average) half  
wave rectification with resist.  
load  
T
= 25 °C  
I
F(AV)  
amb  
200  
1)  
Repetitive peak forward current f ≥ 50 Hz, θ = 180 °,  
= 25 °C  
I
mA  
FRM  
625  
T
amb  
Surge forward current  
Power dissipation  
t < 1 s, T = 25 °C  
I
1
A
j
FSM  
1)  
T
= 25 °C  
P
mW  
amb  
tot  
200  
1) Valid provided that leads are kept at ambient temperature  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
650  
1)  
Junction temperature  
T
°C  
°C  
j
150  
1)  
Storage temperature range  
T
S
- 65 to + 175  
1) Valid provided that leads are kept at ambient temperature  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 100 mA  
Part  
Symbol  
Min  
Typ.  
Max  
Unit  
V
Forward voltage  
Leakage current  
I
I
V
V
1.00  
1.25  
100  
15  
F
F
F
F
= 200 mA  
= 100 V  
V
V
V
V
V
V
V
BAV19WS  
BAV19WS  
BAV20WS  
BAV20WS  
BAV21WS  
BAV21WS  
I
I
I
I
I
I
nA  
µA  
nA  
µA  
nA  
µA  
Ω
R
R
R
R
R
R
R
= 100 V, T = 100 °C  
j
R
R
R
R
R
= 150 V  
100  
15  
= 150 V, T = 100 °C  
j
= 200 V  
100  
15  
= 200 V, T = 100 °C  
j
Dynamic forward resistance  
Diode capacitance  
I
= 10 mA  
r
5
F
f
V
= 0, f = 1 MHz  
C
1.5  
50  
pF  
ns  
R
tot  
rr  
Reverse recovery time  
I
I
= 30 mA, I = 30 mA,  
t
F
R
= 3 mA, R = 100 Ω  
rr  
L
www.vishay.com  
2
Document Number 85726  
Rev. 1.3, 08-Jul-04  
BAV19WS / 20WS / 21WS  
VISHAY  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1000  
100  
100  
°
T = 100  
j
C
10  
1
°
C
25  
10  
0.1  
0.01  
1
0
0.2  
0.4  
0.6  
0.8  
1
1
10  
100  
18861  
I
F
- Forward Current ( mA )  
18858  
V - Forward Voltage ( V )  
F
Figure 1. Forward Current vs. Forward Voltage  
Figure 4. Dynamic Forward Resistance vs. Forward Current  
1000  
100  
0.3  
0.2  
DC current I  
F
10  
Current (rectif.)I  
O
Reverse Voltage  
BAV100 V = 50 V  
R
0.1  
0
BAV101 V = 100 V  
1
R
BAV102 V = 150 V  
R
BAV103 V = 200 V  
R
0.1  
0
20 40 60 80 100 120 140 160 180 200  
0
30  
60  
90  
120  
150  
18862  
T - Junction Temperature ( ° C )  
j
18859  
T
amb  
- Ambient Temperature ( °C )  
Figure 2. Admissible Forward Current vs. Ambient Temperature  
Figure 5. Leakage Current vs. Junction Temperature  
250  
200  
150  
100  
50  
2.0  
°
T = 25  
j
C
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
0
20 40 60 80 100 120 140 160 180 200  
- Ambient Temperature ( °C )  
0.1  
1
10  
100  
18864  
T
amb  
V
R
- Reverse Voltage ( V )  
18863  
Figure 3. Admissible Power Dissipation vs. Ambient Temperature  
Figure 6. Capacitance vs. Reverse Voltage  
Document Number 85726  
Rev. 1.3, 08-Jul-04  
www.vishay.com  
3
BAV19WS / 20WS / 21WS  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm (Inches)  
1.25 (0.049) max.  
0.15 (0.006) max.  
0.25 (0.010) min.  
0.1 (0.004) max.  
0.3 (0.012)  
Mounting Pad Layout  
Cathode Band  
ISO Method E  
1.60 (0.062)  
0.39 (0.015)  
1.5 (0.059)  
1.1 (0.043)  
17443  
www.vishay.com  
4
Document Number 85726  
Rev. 1.3, 08-Jul-04  
BAV19WS / 20WS / 21WS  
VISHAY  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85726  
Rev. 1.3, 08-Jul-04  
www.vishay.com  
5

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