BAT54C-V-GS08 [VISHAY]

Small Signal Schottky Diodes, Single & Dual; 小信号肖特基二极管,单,双
BAT54C-V-GS08
型号: BAT54C-V-GS08
厂家: VISHAY    VISHAY
描述:

Small Signal Schottky Diodes, Single & Dual
小信号肖特基二极管,单,双

信号二极管 小信号肖特基二极管 光电二极管
文件: 总6页 (文件大小:164K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT54-V/54A-V/54C-V/54S-V  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single & Dual  
Features  
• These diodes feature very low turn-on  
voltage and fast switching  
e3  
• These devices are protected by a PN  
junction guard ring against excessive volt-  
age, such as electrostatic discharges  
BAT54-V  
3
BAT54A-V  
3
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Top View  
Top View  
1
2
1
2
Mechanical Data  
Case: SOT23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/3 k per 7" reel (8 mm tape), 15 k/box  
BAT54S-V  
3
BAT54C-V  
3
1
2
1
2
18034  
Parts Table  
Part  
Ordering code  
BAT54-V-GS18 or BAT54-V-GS08  
BAT54A-V-GS18 or BAT54A-V-GS08  
BAT54C-V-GS18 or BAT54C-V-GS08  
BAT54S-V-GS18 or BAT54S-V-GS08  
Type Marking  
Remarks  
BAT54-V  
L4  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
BAT54A-V  
BAT54C-V  
BAT54S-V  
L42  
L43  
L44  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
V
VRRM  
Repetitive peak reverse voltage  
Forward continuous current  
30  
2001)  
3001)  
6001)  
IF  
mA  
IFRM  
IFSM  
Ptot  
Repetitive peak forward current  
Surge forward current current  
Power dissipation  
mA  
mA  
mW  
tp < 1 s  
230  
1) Device on fiberglass substrate, see layout on next page.  
Document Number 85508  
Rev. 1.7, 16-Oct-06  
www.vishay.com  
1
BAT54-V/54A-V/54C-V/54S-V  
Vishay Semiconductors  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
K/W  
°C  
4301)  
125  
Thermal resistance junction to ambiant air  
Junction temperature  
Tj  
Tstg  
Storage temperature range  
- 65 to + 150  
°C  
1) Device on fiberglass substrate, see layout on next page.  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse Breakdown voltage  
Leakage current  
Test condition  
Symbol  
Min  
30  
Typ.  
Max  
2
Unit  
V
IR = 100 µA (pulsed)  
V(BR)  
Pulse test tp < 300 µs, δ < 2 % at  
VR = 25 V  
IR  
µA  
Forward voltage  
IF = 0.1 mA, tp < 300 µs, δ < 2 %  
IF = 1 mA, tp < 300 µs, δ < 2 %  
IF = 10 mA, tp < 300 µs, δ < 2 %  
IF = 30 mA, tp < 300 µs, δ < 2 %  
IF = 100 mA, tp < 300 µs, δ < 2 %  
VR = 1 V, f = 1 MHz  
VF  
VF  
VF  
VF  
VF  
CD  
trr  
240  
320  
400  
500  
800  
10  
mV  
mV  
mV  
mV  
mV  
pF  
Diode capacitance  
Reverse recovery time  
IF = 10 mA to IR = 10 mA,  
5
ns  
iR = 1 mA, RL = 100 Ω  
Layout for R  
test  
thJA  
Thickness:  
Fiberglass 1.5 mm (0.059 in.)  
Copper leads 0.3 mm (0.012 in.)  
7.5 (0.3)  
3 (0.12)  
1 (0.4)  
2 (0.8)  
2 (0.8)  
1 (0.4)  
12 (0.47)  
0.8 (0.03)  
15 (0.59)  
5 (0.2)  
1.5 (0.06)  
5.1 (0.2)  
17451  
www.vishay.com  
2
Document Number 85508  
Rev. 1.7, 16-Oct-06  
BAT54-V/54A-V/54C-V/54S-V  
Vishay Semiconductors  
Typical Characteristics  
Tamb = 25 °C, unless otherwise specified  
1000  
T = 125 °C  
j
100  
10  
- 40 °C  
1
25 °C  
0.1  
0.01  
0.6  
1.2 1.4  
0
0.2 0.4  
0.8  
1
18867  
VF - Forward Current (V)  
Figure 1. Typical Forward Voltage Forward Current at Various  
Temperatures  
14  
12  
10  
8
6
4
2
0
0
4
8
12  
V - Reverse Voltage (V)  
R
16  
20  
24  
28  
18868  
Figure 2. Diode Capacitance vs. Reverse Voltage VR  
1000  
°
T = 125 C  
j
100  
10  
1
°
100 C  
°
75 C  
°
50 C  
°
25 C  
0.1  
0.01  
0
5
10  
15  
20  
25  
30  
V
R
- Reverse Voltage (V)  
18869  
Figure 3. Typical Variation of Reverse Current at Various  
Temperatures  
Document Number 85508  
Rev. 1.7, 16-Oct-06  
www.vishay.com  
3
BAT54-V/54A-V/54C-V/54S-V  
Vishay Semiconductors  
Package Dimensions in mm (Inches): SOT23  
17418  
www.vishay.com  
4
Document Number 85508  
Rev. 1.7, 16-Oct-06  
BAT54-V/54A-V/54C-V/54S-V  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85508  
Rev. 1.7, 16-Oct-06  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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