BAT54-GS08 [VISHAY]

Small Signal Schottky Diodes, Single Dual; 小信号肖特基二极管，单双


型号：	BAT54-GS08
厂家：	VISHAY
描述：	Small Signal Schottky Diodes, Single Dual 小信号肖特基二极管，单双小信号肖特基二极管
文件：	总5页 (文件大小：116K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BAT54 / 54A / 54C / 54S

Vishay Semiconductors

Small Signal Schottky Diodes, Single & Dual

Features

• These diodes feature very low turn-on voltage and

fast switching.

• These devices are protected by a PN junction

guard ring against excessive voltage, such as

electrostatic discharges.

BAT54

BAT54A

Mechanical Data

Case: SOT-23 Plastic case

Weight: approx. 8.8 mg

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Top View

BAT54S

BAT54C

18034

Parts Table

Part

Ordering code

BAT54-GS18 or BAT54-GS08

Marking

Remarks

BAT54

Tape and Reel

BAT54A

BAT54C

BAT54S

BAT54A-GS18 or BAT54A-GS08

BAT54C-GS18 or BAT54C-GS08

BAT54S-GS18 or BAT54S-GS08

L42

L43

L44

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_RRM

Value

Unit

Repetitive peak reverse voltage

200¹⁾

300¹⁾

600¹⁾

230

Forward continuous current

Repetitive peak forward current

Surge forward current current

Power dissipation

I_F

I_FRM

I_FSM

P_tot

t_p< 1 s

¹⁾Device on fiberglass substrate, see layout on next page.

Document Number 85508

Rev. 1.6, 24-Nov-04

www.vishay.com

BAT54 / 54A / 54C / 54S

Vishay Semiconductors

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

R_thJA

Value

430¹⁾

Unit

Thermal resistance junction to

ambiant air

°C/W

Junction temperature

T_j= T_stg

T_S

- 65 to + 150

°C

Storage temperature range

¹⁾Device on fiberglass substrate, see layout on next page.

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

I_R= 100 µA pulses

Symbol

V_(BR)

I_R

Min

Typ.

Max

Unit

Reverse Breakdown voltage

Leakage current

Pulse test t_p< 300 µs, δ < 2 % at

µA

V_R= 25 V

Forward voltage

I_F= 0.1 mA, t_p< 300 µs, δ < 2 %

I_F= 1 mA, t_p< 300 µs, δ < 2 %

I_F= 10 mA, t_p< 300 µs, δ < 2 %

I_F= 30 mA, t_p< 300 µs, δ < 2 %

I_F= 100 mA, t_p< 300 µs, δ < 2 %

V_F

C_tot

t_rr

240

320

400

500

1000

Diode capacitance

V_R= 1 V, f = 1 MHz

Reverse recovery time

I_F= 10 mA through I_R= 10 mA

to I_rr= 1mA, R_L= 100 Ω

Layout for R

test

thJA

Thickness:

Fiberglass 1.5 mm (0.059 in.)

Copper leads 0.3 mm (0.012 in.)

7.5 (0.3)

3 (0.12)

1 (0.4)

2 (0.8)

1 (0.4)

12 (0.47)

0.8 (0.03)

15 (0.59)

5 (0.2)

1.5 (0.06)

5.1 (0.2)

17451

www.vishay.com

Document Number 85508

Rev. 1.6, 24-Nov-04

BAT54 / 54A / 54C / 54S

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1000

100

T_J= 125°C

T_J= -40°C

= 25 C

0.1

0.01

0.2 0.4 0.6 0.8 1.0

V_Fin V

1.2 1.4

18025

Figure 1. Typical Forward Voltage Forward Current at Various

Temperatures

24 28

18026

V_Rin V

Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage V_R

1000

100

T_J= 125°ˇC

T_J= 100°ˇC

T_J= 75°ˇC

T_J= 50ˇ°C

0.1

T_J= 25°C

0.01

_Rin V

18027

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

Document Number 85508

Rev. 1.6, 24-Nov-04

www.vishay.com

BAT54 / 54A / 54C / 54S

Vishay Semiconductors

Package Dimensions in mm (Inches)

0.175 (.007)

0.098 (.005)

0.1 (.004) max.

2.6 (.102)

2.35 (.092)

0.4 (.016)

ISO Method E

3.1 (.122)

Mounting Pad Layout

2.8 (.110)

0.4 (.016)

0.52 (0.020)

0.9 (0.035)

2.0 (0.079)

0.95 (.037)

0.95 (0.037)

17418

www.vishay.com

Document Number 85508

Rev. 1.6, 24-Nov-04

BAT54 / 54A / 54C / 54S

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85508

Rev. 1.6, 24-Nov-04

www.vishay.com

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