BAT42W-V-GS08 [VISHAY]

Small Signal Schottky Diodes; 小信号肖特基二极管
BAT42W-V-GS08
型号: BAT42W-V-GS08
厂家: VISHAY    VISHAY
描述:

Small Signal Schottky Diodes
小信号肖特基二极管

信号二极管 小信号肖特基二极管 光电二极管
文件: 总5页 (文件大小:139K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT42W-V/BAT43W-V  
Vishay Semiconductors  
Small Signal Schottky Diodes  
Features  
• These diodes feature very low turn-on volt-  
age and fast switching. These devices are  
e3  
protected by a PN junction guard ring  
against excessive voltage, such as elec-  
trostatic discharges  
• These diodes are also available in the DO35 case  
with the type designations BAT42 to BAT43 and in  
MiniMELF SOD80 case with the type designations  
LL42 to LL43  
17431  
• For general purpose applications  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD123 Plastic case  
Weight: approx. 10.3 mg  
Packaging Codes/Options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
BAT42W-V  
BAT43W-V  
Ordering code  
Type Marking  
Remarks  
BAT42W-V-GS18 or BAT42W-V-GS08  
BAT43W-V-GS18 or BAT43W-V-GS08  
L2  
L3  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VRRM  
Value  
Unit  
V
Repetitive peak reverse voltage  
Forward continuous current  
Repetitive peak forward current  
Surge forward current  
30  
2001)  
5001)  
41)  
Tamb = 25 °C  
IF  
mA  
tp < 1 s, δ < 0.5, Tamb = 25 °C  
tp < 10 ms, Tamb = 25 °C  
Tamb = 65 °C  
IFRM  
IFSM  
Ptot  
mA  
A
Power dissipation1)  
2001)  
mW  
1) Valid provided that electrodes are kept at ambient temperature  
Document Number 85661  
Rev. 1.5, 27-Feb-07  
www.vishay.com  
1
BAT42W-V/BAT43W-V  
Vishay Semiconductors  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
K/W  
°C  
3001)  
125  
Thermal resistance junction to ambient air  
Junction temperature  
Tj  
Tamb  
Tstg  
Ambient operating temperature range  
Storage temperature range  
- 55 to + 125  
- 55 to + 150  
°C  
°C  
1) Valid provided that electrodes are kept at ambient temperature  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
V(BR)  
Min  
30  
Typ.  
Max  
Unit  
V
IR = 100 µA (pulsed)  
VR = 25 V  
Reverse breakdown voltage  
Leakage current1)  
IR  
IR  
0.5  
100  
1000  
400  
650  
330  
450  
µA  
µA  
mV  
mV  
mV  
mV  
mV  
pF  
VR = 25 V, Tj = 100 °C  
IF = 200 mA  
Forward voltage1)  
VF  
VF  
VF  
VF  
VF  
CD  
trr  
IF = 10 mA  
BAT42W-V  
BAT42W-V  
BAT43W-V  
BAT43W-V  
IF = 50 mA  
IF = 2 mA  
260  
80  
IF = 15 mA  
VR = 1 V, f = 1 MHz  
Diode capacitance  
7
Reverse recovery time  
IF = 10 mA, IR = 10 mA,  
5
ns  
iR = 1 mA, RL = 100 Ω  
Rectification efficieny  
RL = 15 kΩ, CL = 300 pF,  
ηv  
%
f = 45 MHz, VRF = 2 V  
1) Pulse test tp < 300 µs, tp/T < 0.02  
Typical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
1000  
250  
100  
10  
200  
150  
100  
50  
- 40 °C  
125 °C  
25 °C  
1
0.1  
0.01  
0
0
50  
100  
150  
200  
0
200  
400  
600 800 1000 1200  
18442  
18443  
T
amb  
- Ambient Temperature (°C)  
V
F
- Instantaneous Forward Voltage (mV)  
Figure 1. Admissible Power Dissipation vs. Ambient Temperature  
Figure 2. Typical Reverse Characteristics  
www.vishay.com  
2
Document Number 85661  
Rev. 1.5, 27-Feb-07  
BAT42W-V/BAT43W-V  
Vishay Semiconductors  
1000  
100  
10  
14  
12  
10  
8
125 °C  
100 °C  
75 °C  
50 °C  
6
1
4
25 °C  
0.1  
0.01  
2
0
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
40  
50  
18445  
18444  
VR - Reverse Voltage (V)  
V
R
- Reverse Voltage (V)  
Figure 3. Typical Reverse Characteristics  
Figure 4. Typical Capacitance vs. Reverse Voltage  
Package Dimensions in millimeters (inches): SOD123  
17432  
Document Number 85661  
Rev. 1.5, 27-Feb-07  
www.vishay.com  
3
BAT42W-V/BAT43W-V  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
4
Document Number 85661  
Rev. 1.5, 27-Feb-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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