概述
数据手册
替代型号BAT42W-E3-18 概述
DIODE SCHOTTKY 30V 200MA SOD123
BAT42W-E3-18 数据手册
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PDF下载BAT42W, BAT43W
Vishay Semiconductors
www.vishay.com
Small Signal Schottky Diode
FEATURES
• These diodes feature very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
• For general purpose applications
• AEC-Q101 qualified available
click logo to get started
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
DESIGN SUPPORT TOOLS
Models
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
CIRCUIT
CONFIGURATION
PART
ORDERING CODE
TYPE MARKING
REMARKS
BAT42W-E3-08 or BAT42W-E3-18
BAT42W-HE3-08 or BAT42W-HE3-18
BAT43W-E3-08 or BAT43W-E3-18
BAT43W-HE3-08 or BAT43W-HE3-18
BAT42W
Single
L2
Tape and reel
BAT43W
Single
L3
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VRRM
IF
VALUE
30
UNIT
V
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Surge forward current (1)
Power dissipation (1)
200
500
4
mA
mA
A
tp < 1 s, < 0.5
tp < 10 ms
IFRM
IFSM
Tamb = 65 °C
Ptot
200
mW
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
300
UNIT
K/W
°C
Junction temperature
125
Operating temperature range
Storage temperature range
Top
-55 to +125
-55 to +150
°C
Tstg
°C
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 23-Feb-18
Document Number: 85661
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT42W, BAT43W
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Reverse breakdown voltage
I
R = 100 μA (pulsed)
VR = 25 V
V(BR)
IR
30
0.5
100
1000
400
650
330
450
μA
Leakage current (1)
Forward voltage (1)
V
R = 25 V, Tj = 100 °C
IF = 200 mA
IF = 10 mA
IR
μA
VF
VF
VF
VF
VF
CD
mV
mV
mV
mV
mV
pF
BAT42W
BAT42W
BAT43W
BAT43W
IF = 50 mA
IF = 2 mA
260
IF = 15 mA
Diode capacitance
V
R = 1 V, f = 1 MHz
IF = 10 mA, IR = 10 mA,
R = 1 mA, RL = 100
7
Reverse recovery time
trr
5
ns
i
Note
(1)
Pulse test; tp 300 μs, tp/T < 0.02
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
1000
100
10
125 °C
100 °C
75 °C
200
150
100
50
50 °C
1
25 °C
0.1
0.01
0
0
50
100
150
200
0
10
20
30
40
50
18442
Tamb - Ambient Temperature (°C)
18444
V
R
- Reverse Voltage (V)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 - Typical Reverse Characteristics
1000
100
14
12
10
8
- 40 °C
125 °C
10
1
25 °C
6
4
0.1
0.01
2
0
0
5
10
15
20
25
30
0
200
400
600 800 1000 1200
18445
VR - Reverse Voltage (V)
18443
V
F
- Instantaneous Forward Voltage (mV)
Fig. 2 - Typical Forward Characteristics
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.9, 23-Feb-18
Document Number: 85661
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT42W, BAT43W
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
3.55 (0.140)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.9, 23-Feb-18
Document Number: 85661
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
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or for that of subsequent links.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
BAT42W-E3-18 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BAT42W-7-F | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 功能相似 |
|
BAT42W-E3-18 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BAT42W-G | VISHAY | Small Signal Schottky Diode | 获取价格 |
|
| BAT42W-G, BAT43W-G | VISHAY | Small Signal Schottky Diode | 获取价格 |
|
| BAT42W-G3-08 | VISHAY | Small Signal Schottky Diode | 获取价格 |
|
| BAT42W-G3-18 | VISHAY | Small Signal Schottky Diode | 获取价格 |
|
| BAT42W-HE3-08 | VISHAY | DIODE SCHOTTKY 30V 200MA SOD123 | 获取价格 |
|
| BAT42W-HE3-18 | VISHAY | DIODE SCHOTTKY 30V 200MA SOD123 | 获取价格 |
|
| BAT42W-Q1 | ANBON | SOD-123 | 获取价格 |
|
| BAT42W-T1 | WTE | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| BAT42W-T3 | WTE | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| BAT42W-T3 | SENSITRON | Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 | 获取价格 |
|
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