BAT17-GS08 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 4V V(RRM),;![BAT17-GS08](http://pdffile.icpdf.com/pdf2/p00229/img/icpdf/BAT17DS-GS18_1344181_icpdf.jpg)
型号: | BAT17-GS08 |
厂家: | ![]() |
描述: | Rectifier Diode, Schottky, 1 Element, 4V V(RRM), |
文件: | 总4页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BAT17
Vishay Semiconductors
VISHAY
Small Signal Schottky Diodes, Single & Dual
Features
• Low turn-on voltage, Low capacitance
• Ultrafast switching
• Ideal for single or double, UHF balanced mixer,
modulators and phase detectors.
• These diodes are also available in case styles
BAT17
BAT17DS
3
3
SOD-123 with type designation BAT17W, and
SOD-323 with type designation BAT17WS
Top View
1
2
1
2
Mechanical Data
18440
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
BAT17-GS18 or BAT17-GS08
BAT17DS-GS18 or BAT17DS-GS08
Marking
Remarks
BAT17
L7
Tape and Reel
Tape and Reel
BAT17DS
L72
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Symbol
Value
Unit
Continuous reverse voltage
Forward current
V
4
V
R
I
30
mA
mW
F
1)
Power dissipation
T
= 25 °C
P
C
tot
150
1)
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to
ambient air
R
°C/W
thJA
500
Maximum junction temperature
Storage temperature range
T
125
°C
°C
j
T
- 65 to + 150
S
1)
Valid provided that electrodes are kept at ambient temperature
Document Number 85656
Rev. 1.3, 09-Jul-04
www.vishay.com
1
BAT17
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
= 10 µA
Symbol
Min
4
Typ.
Max
Unit
V
Minimum reverse breakdown
I
V
R
(BR)R
voltage
Maximum leakage current
V
V
= 3 V
I
0.25
1.25
600
1.0
µA
µA
mV
pF
R
R
R
= 3 V, T
= 60 °C
I
amb
R
Maximum forward voltage
Diode capacitance
I
= 10 mA
V
C
F
F
V
= 0 V, f = 1 MHz
R
D
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
www.vishay.com
2
Document Number 85656
Rev. 1.3, 09-Jul-04
BAT17
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85656
Rev. 1.3, 09-Jul-04
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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