BAS285 [VISHAY]
Schottky Barrier Diode; 肖特基二极管
| 型号： | BAS285 |
| 厂家： | 
VISHAY |
| 描述： | Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS285
Vishay Telefunken
Schottky Barrier Diode
Features
Integrated protection ring against
static discharge
Very low forward voltage
Applications
96 12009
Applications where a very low forward voltage is
required
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
Test Conditions
Type
Symbol
Value
30
Unit
V
V
R
Peak forward surge current
Repetitive peak forward current t ≤ 1 s
Forward current
Average forward current
Junction temperature
Storage temperature range
t = 10 ms
I
I
5
300
200
200
A
p
FSM
FRM
mA
mA
mA
C
p
I
F
I
FAV
T
125
j
T
–65...+150
C
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
Value
320
Unit
K/W
R
thJA
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =0.1mA
Type
Symbol Min
Typ Max Unit
V
F
V
F
V
F
V
F
V
F
240
320
400
500
800
2.3
mV
mV
mV
mV
mV
A
F
I =1mA
F
I =10mA
F
I =30mA
F
I =100mA
F
Reverse current
V =25V, t =300 s
I
R
R
p
Diode capacitance
V =1V, f=1MHz
R
C
D
10
pF
Document Number 85501
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BAS285
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
200
180
160
140
120
100
80
1000
V
= 30 V
R
T =150°C
j
100
P –Limit
R
T =25°C
j
@100%V
R
R
=
thJA
10
1
540K/W
P –Limit
R
60
@80%V
R
40
20
0.1
0
25
50
75
100
125
150
0
0.5
1.0
1.5
15822
T – Junction Temperature ( °C )
j
15824
V – Forward Voltage ( V )
F
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
1000
10
V
= V
RRM
f=1MHz
R
9
8
7
6
5
4
3
2
1
0
100
10
1
25
50
75
100
125
150
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
15823
T – Junction Temperature ( °C )
j
15825
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85501
Rev. 3, 01-Apr-99
BAS285
Vishay Telefunken
Dimensions in mm
96 12071
Document Number 85501
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BAS285
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85501
Rev. 3, 01-Apr-99
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