BAS19-E3-08 [VISHAY]
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3;
| 型号： | BAS19-E3-08 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 光电二极管 |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19, BAS20, BAS21
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diode
3
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
PARTS TABLE
TYPE
DIFFERENTIATION
TYPE
MARKING
INTERNAL
CONSTRUCTION
PART
ORDERING CODE
REMARKS
BAS19-E3-08 or BAS19-E3-18
BAS19-HE3-08 or BAS19-HE3-18
BAS20-E3-08 or BAS20-E3-18
BAS20-HE3-08 or BAS20-HE3-18
BAS21-E3-08 or BAS21-E3-18
BAS21-HE3-08 or BAS21-HE3-18
BAS19
BAS20
BAS21
VR = 100 V
VR = 150 V
VR = 200 V
A8
Single diode
Single diode
Single diode
Tape and reel
A81
A82
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
SYMBOL
VALUE
100
UNIT
VR
V
V
V
V
V
V
Continuous recerse voltage
VR
150
VR
200
VRRM
VRRM
VRRM
120
Repetitive peak reverse voltage
200
250
Non repetitive peak forward
t = 1 μs
t = 1 s
IFSM
IFSM
IF(AV)
2.5
0.5
A
A
current
Non repetitive peak forward
surge current
Maximum average forward
(av. over any 20 ms period)
200
mA
rectified current (1)
DC forward current (2)
IF
200
625
250
mA
mA
mW
Repetitive peak forward current
Power dissipation (2)
IFRM
Ptot
Notes
(1)
Measured under pulse conditions; pulse time = tp 0.3 ms
Device on fiberglass substrate, see layout on next page
(2)
Rev. 1.8, 15-May-13
Document Number: 85540
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS19, BAS20, BAS21
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
430
UNIT
°C
(1)
Thermal resistance junction to ambient air
Junction temperature
RthJA
Tj
150
°C
Storage temperature range
Operating temperature range
Tstg
Top
- 65 to + 150
- 55 to + 150
°C
°C
Note
(1)
Device on fiberglass substrate, see layout drawing below
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.0
UNIT
IF = 100 mA
VF
VF
IR
V
Forward voltage
IF = 200 mA
1.25
100
100
100
100
V
V
V
V
R = 100 V
R = 150 V
R = 200 V
BAS19
BAS20
BAS21
nA
nA
nA
μA
IR
Leakage current
IR
V
R = VRmax., Tj = 150 °C
IR
Dynamic forward resistance
Diode capacitance
IF = 10 mA
rf
5
V
R = 0, f = 1 MHz
IF = IR = 30 mA, RL = 100 ,
R = 3 mA
CD
5
pF
Reverse recovery time
trr
50
ns
i
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.8, 15-May-13
Document Number: 85540
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS19, BAS20, BAS21
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0° to 8°
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 1.8, 15-May-13
Document Number: 85540
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
BAS19-HE3-08
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
VISHAY
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