BAQ33GS08 [VISHAY]
0.2A, 30V, SILICON, SIGNAL DIODE, DO-213AA, GLASS, MINIMELF-2;
| 型号： | BAQ33GS08 |
| 厂家： | 
VISHAY |
| 描述： | 0.2A, 30V, SILICON, SIGNAL DIODE, DO-213AA, GLASS, MINIMELF-2 二极管 |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAQ33...BAQ35
Vishay Telefunken
Small Signal Low Leakage Diodes
Features
Silicon Planar Diodes
Very low reverse current
Applications
94 9371
Protection circuits, time delay circuits,
peak follower circuits, logarithmic amplifiers
Order Instruction
Type
Type Differentiation
Ordering Code
BAQ33–GS08
BAQ34–GS08
BAQ35–GS08
Remarks
BAQ33
BAQ34
BAQ35
V
RRM
V
RRM
= 40 V
= 70 V
= 140 V
Tape and Reel
Tape and Reel
Tape and Reel
V
RRM
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
30
60
Unit
V
V
BAQ33
BAQ34
BAQ35
V
R
V
R
V
R
Reverse voltage
125
V
Peak forward surge current
Forward current
Junction temperature
Storage temperature range
t =1 s
p
I
2
200
200
A
mA
C
FSM
I
F
T
j
T
–65...+200
C
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
500
Unit
K/W
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1 (4)
Document Number 85537
Rev. 3, 13-Feb-01
BAQ33...BAQ35
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =100mA
V
1
3
0.5
1
1
1
V
nA
A
nA
nA
nA
V
V
V
pF
F
F
E
300lx, V
I
I
I
I
I
1
R
R
E
E
E
E
300lx, V , T =125 C
300lx, V =15 V
300lx, V =30 V
300lx, V =60 V
R
j
R
R
R
R
BAQ33
BAQ34
BAQ35
BAQ33
BAQ34
BAQ35
0.5
0.5
0.5
R
R
R
40
70
140
Breakdown voltage
Diode capacitance
I =5 A, t /T=0.01, t =0.3ms
V
(BR)
R
p
p
V =0, f=1MHz
R
C
D
3
Characteristics (Tj = 25 C unless otherwise specified)
10000
1000
100
10
1000
100
10
V =V
T =25°C
j
R
RRM
Scattering Limit
Scattering Limit
1
1
0.1
200
2.0
0
40
80
120
160
0
0.4
0.8
V – Forward Voltage ( V )
F
1.2
1.6
94 9079
T – Junction Temperature ( °C )
j
94 9078
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
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2 (4)
Document Number 85537
Rev. 3, 13-Feb-01
BAQ33...BAQ35
Vishay Telefunken
Dimensions in mm
96 12070
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3 (4)
Document Number 85537
Rev. 3, 13-Feb-01
BAQ33...BAQ35
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 85537
Rev. 3, 13-Feb-01
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