BA783S/D3 [VISHAY]
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon;
| 型号： | BA783S/D3 |
| 厂家： | 
VISHAY |
| 描述： | Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon 局域网 光电二极管 |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BA782 and BA783
Tuner Diodes
SOD-123
.022 (0.55)
Cathode Band
Pad Layout SOD-123
Top View
)
5)
)
5)
0.055 (1.40)
0.094 (2.40)
(
140(3.
2
10(2.
.
.
.
.
Dimensions in inches
and (millimeters)
53)
.
x
.067 (1.70)
.055 (1.40)
am
51)
.
x
503(1.
.
amx.
am
6(0.
4(0.1)
.
.010 (0.25)
min.
Features
Mechanical Data
• Silicon Epitaxial Planar Diode Switches
Case: SOD-123 plastic case
Weight: approximately 0.01 grams
Cathode Band Color: Blue
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape)
D4/3K per 7” reel (8mm tape)
• For electric bandswitching in radio and TV tuners
in the frequency range of 50...1000 MHz. The
dynamic forward resistance is constant and very
small over a wide range of frequency and forward
current. The reverse capacitance is also small and
largely independent of the reverse voltage.
• These diodes are also available in SOD-323 case
with the type designations BA782S and BA783S.
Maximum Ratings and Thermal CharacteristicsRatings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
IF
35
V
Forward Continuous Current at Tamb = 25°C
Junction Temperature
100
mA
°C
Tj
125
Storage Temperature Range
TS
–55 to +125
°C
2/28/00
BA782 and BA783
Tuner Diodes
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Test Condition
IF = 100 mA
VR = 20 V
Min
Typ
—
Max
1
Unit
V
Forward Voltage
Leakage Current
VF
IR
—
—
—
50
nA
BA782
BA783
—
—
—
—
0.7
1.2
f = 50...1000 MHz, IF = 3 mA
f = 50...1000 MHz, IF = 10 mA
Dynamic Forward Resistance
rf
Ω
BA782
BA783
—
—
—
—
0.5
0.9
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
—
—
—
—
—
—
1.5
1.25
1.2
Capacitance
BA782
BA783
Ctot
LS
pF
nH
Series Inductance across Case
—
—
2.5
—
Ratings and Characteristic Curves
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