BA782 [VISHAY]
Bandswitching Diodes; 频段转换二极管
| 型号： | BA782 |
| 厂家： | 
VISHAY |
| 描述： | Bandswitching Diodes |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BA782, BA783
Bandswitching Diodes
FEATURES
SOD-123
Silicon Epitaxial Planar Diode Switches
♦
♦
.022 (0.55)
For electronic bandswitching in radio
and TV tuners in the frequency range
of 50 … 1000 MHz. The dynamic for-
ward resistance is constant and very small over
a wide range of frequency and forward current.
The reverse capacitance is also small and
largely independent of the reverse voltage.
Cathode Mark
Top View
.067 (1.70)
.055 (1.40)
♦
These diodes are also available in SOD-323 case
with the type designations BA782S and BA783S.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
35
Unit
V
Reverse Voltage
VR
IF
Forward Continuous Current at Tamb = 25 °C
Junction Temperature
100
mA
°C
Tj
125
Storage Temperature Range
TS
–55 to +125
°C
4/98
256
BA782, BA783
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
1
Unit
V
Forward Voltage at IF = 100 mA
Leakage Current at VR = 20 V
VF
IR
–
–
–
–
50
nA
Dynamic Forward Resistance
at f = 50 to 1000 MHz, IF = 3 mA
BA782
BA783
BA782
BA783
rf
rf
rf
rf
–
–
–
–
–
–
–
–
0.7
1.2
0.5
0.9
Ω
Ω
Ω
Ω
at f = 50 to 1000 MHz, IF = 10 mA
Capacitance
at VR = 1 V, f = 1 MHz
at VR = 3 V, f = 1 MHz
Ctot
Ctot
Ctot
–
–
–
–
–
–
1.5
1.25
1.2
pF
pF
pF
BA782
BA783
Series Inductance across Case
LS
–
2.5
–
nH
RATINGS AND CHARACTERISTIC CURVES BA782, BA783
257
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