BA679S-GS18 [VISHAY]
DIODE SILICON, PIN DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, PIN Diode;
| 型号： | BA679S-GS18 |
| 厂家： | 
VISHAY |
| 描述： | DIODE SILICON, PIN DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, PIN Diode 衰减器 测试 二极管 |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BA679, BA679S
Vishay Semiconductors
www.vishay.com
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
TYPE
DIFFERENTIATION
INTERNAL
CONSTRUCTION
PART
ORDERING CODE
TYPE MARKING
REMARKS
BA679
zr > 5 k
BA679-GS18 or BA679-GS08
-
-
Single diode
Tape and reel
Tape and reel
BA679S
zr > 9 k
BA679S-GS18 or BA679S-GS08
Single diode
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
30
UNIT
V
Reverse voltage
Forward continuous current
VR
IF
50
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
on PC board
50 mm x 50 mm x 1.6 mm
Thermal resistance junction to ambient air
RthJA
500
K/W
Junction temperature
Tj
125
°C
°C
Storage temperature range
Tstg
- 55 to + 150
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
IF = 20 mA
VF
IR
CD
rf
1
Reverse current
V
R = 30 V
0.05
0.5
50
μA
pF
Diode capacitance
Differential forward resistance
f = 100 MHz, VR = 0 V
f = 100 MHz, IF = 1.5 mA
BA679
zr
zr
5
9
k
k
μs
Reverse impedance
f = 100 MHz, VR = 0 V
IF = 10 mA, IR = 10 mA
BA679S
Minority carrier lifetime
4
Rev. 1.8, 16-May-12
Document Number: 85529
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA679, BA679S
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
2.0
0
0.4
0.8
1.2
1.6
95 9735
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
f > 20 MHz
Tj = 25 °C
10
1
10
0.001
0.01
0.1
1
IF - Forward Current (mA)
95 9734
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
- Circuit with 10 dB Attenuation
V0 = 40 dBmV
Π
0
f
1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0
20
40
60
80
f2 , modulated with 200 kHz, m = 100 % (MHz)
95 9733
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.8, 16-May-12
Document Number: 85529
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA679, BA679S
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
Cathode indentification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
1.25 (0.49) min.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
5 (0.197) ref.
96 12070
Rev. 1.8, 16-May-12
Document Number: 85529
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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