B360B-M3/52T [VISHAY]
Rectifier Diode,;
| 型号： | B360B-M3/52T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B350B, B360B
Vishay General Semiconductor
www.vishay.com
Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
Package
DO-214AA (SMB)
IF(AV)
3.0 A
50 V, 60 V
60 A
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
VF at IF = 3.0 A
TJ max.
0.51 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variations
Single die
E3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B350B
B35
B360B
B36
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
50
60
V
A
Maximum average forward rectified current at TL (fig. 1)
3.0
60
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
TJ = 25 °C
0.58
0.51
-
0.66
0.59
100
10
(1)
Maximum instantaneous forward voltage
IF = 3.0 A
Rated VR
VF
V
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
μA
(2)
Maximum reverse current
IR
3
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
Revision: 17-Jan-14
Document Number: 89122
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B350B, B360B
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B350B
B360B
UNIT
(1)
RJA
70
15
Typical thermal resistance
°C/W
(1)
RJM
Note
(1)
PCB. mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas, thermal resistance RJA - junction to ambient, RJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
B360B-E3/52T
B360B-E3/5BT
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.096
0.096
52T
5BT
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
3200
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1
Resistive or Inductive Load
TA = 150 °C
TA = 125 °C
TA = 25 °C
TM Measured
at Mount of Terminal
0.1
0
25
50
75
100
125
150
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
TM - Mount Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
100
2.2
D = 0.8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.5
D = 0.3
D = 0.2
10
1
TA = 150 °C
D = 1.0
TA = 125 °C
D = 0.1
0.1
T
0.01
0.001
0.0001
TA = 25 °C
D = tp/T
2.5
tp
3.0
0
0.5
1.0
1.5
2.0
3.5
10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Revision: 17-Jan-14
Document Number: 89122
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B350B, B360B
Vishay General Semiconductor
www.vishay.com
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.008 (0.2)
0 (0)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Revision: 17-Jan-14
Document Number: 89122
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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