AR4PMHM3_A/I [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.8A, 1000V V(RRM), Silicon, TO-277A,;
| 型号： | AR4PMHM3_A/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.8A, 1000V V(RRM), Silicon, TO-277A, 快速恢复二极管 局域网 光电二极管 |
| 文件： | 总5页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AR4PK, AR4PM
Vishay General Semiconductor
www.vishay.com
Fast Switching Avalanche Surface Mount Rectifiers
FEATURES
Available
• Very low profile - typical height of 1.1 mm
eSMP® Series
• Ideal for automated placement
• Glass passivated pellet chip junction
K
• Fast reverse recovery time
• Controlled avalanche characteristics
• Low leakage current
1
• High forward surge capability
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
TO-277A (SMPC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Anode 1
Anode 2
K
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in lighting, fast switching rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
IF(AV)
4.0 A
VRRM
IFSM
800 V, 1000 V
65 A
MECHANICAL DATA
trr
120 ns
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
EAS
20 mJ
VF at IF = 4.0 A
TJ max.
Package
Diode variation
1.27 V
Base P/N-M3
-
halogen-free, RoHS-compliant, and
commercial grade
175 °C
Base P/NHM3
- halogen-free, RoHS-compliant and
TO-277A (SMPC)
Single die
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AR4PK
AR4K
800
AR4PM
AR4M
1000
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
4.0
1.8
Maximum DC forward current (fig. 1)
(2)
IF
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
65
A
IAS = 2.5 A max.
AS = 1.0 A typ.
20
30
Non-repetitive avalanche energy at TJ = 25 °C
Operating junction and storage temperature range
EAS
mJ
°C
I
TJ, TSTG
-55 to +175
Notes
(1)
Mounted on 30 mm x 30 mm pad areas, 1 oz. FR4 PCB
Free air, mounted on recommended pad area
(2)
Revision: 23-Feb-16
Document Number: 89335
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR4PK, AR4PM
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
1.66
1.27
0.42
96.3
MAX.
1.9
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 4.0 A
Rated VR
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
1.6
10
(2)
Reverse current
IR
μA
500
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
Maximum reverse recovery time
trr
79
55
120
-
ns
I
Typical junction capacitance per diode
Rated VR = 4.0 V, 1 MHz
CJ
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AR4PK
AR4PM
UNIT
(1)
RJA
85
5
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad are; thermal resistance RJA - junction to ambient
Units mounted on PCB with 30 mm x 30 mm copper pad areas; RJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AR4PM-M3/86A
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
H
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
AR4PM-M3/87A
AR4PMHM3/86A (1)
AR4PMHM3/86A (1)
AR4PMHM3_A/H (1)
AR4PMHM3_A/I (1)
I
Note
(1)
AEC-Q101 qualified
Revision: 23-Feb-16
Document Number: 89335
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR4PK, AR4PM
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.8
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10 000
1000
100
10
TM = 148 °C
TA = 175 °C
TA = 125 °C
TA = 25 °C
TA = 75 °C
1
TA = 25 °C
0.1
TM Measured
at the Cathode Band Terminal
0.01
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
TM - Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum DC Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
7
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.5
D = 0.8
D = 0.3
6
D = 0.2
5
4
D = 0.1
D = 1.0
10
3
2
1
0
T
D = tp/T
tp
1
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8
Average Forward Current (A)
0.1
1
10
100
Reverse Voltage (V)
Fig. 2 - Average Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
100
10
1
Junction-to-Ambient
TA = 175 °C
TA = 125 °C
TA = 75 °C
TA = 25 °C
0.1
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 23-Feb-16
Document Number: 89335
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR4PK, AR4PM
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 23-Feb-16
Document Number: 89335
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
AR5000
Rating at 25â Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.
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