AR3PD-M3/87A [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.8A, 200V V(RRM), Silicon, TO-277A,;型号: | AR3PD-M3/87A |
厂家: | VISHAY |
描述: | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.8A, 200V V(RRM), Silicon, TO-277A, 快速恢复二极管 局域网 光电二极管 |
文件: | 总5页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AR3PD, AR3PG, AR3PJ
Vishay General Semiconductor
www.vishay.com
Fast Switching Avalanche Surface Mount Rectifiers
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Glass passivated pellet chip junction
• Fast reverse recovery time
• Controlled avalanche characteristics
1
• Low leakage current
2
• High forward surge capability
TO-277A (SMPC)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Anode 1
Anode 2
K
• AEC-Q101 qualified available
Cathode
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in lighting, fast switching rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
IFSM
200 V, 400 V, 600 V
50 A
MECHANICAL DATA
Case: TO-277A (SMPC)
trr
140 ns
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
-
halogen-free, RoHS-compliant, and
EAS
20 mJ
VF at IF = 3.0 A
TJ max.
Package
Diode variation
1.04 V
- halogen-free, RoHS-compliant and
175 °C
TO-277A (SMPC)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AR3PD
AR3D
200
AR3PG
AR3G
400
AR3PJ
AR3J
600
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
3.0
Maximum DC forward current (fig. 1)
(2)
IF
1.8
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
50
A
IAS = 2.5 A max.
AS = 1.0 A typ.
Operating junction and storage temperature range
20
30
Non-repetitive avalanche energy at TJ = 25 °C
EAS
mJ
°C
I
TJ, TSTG
-55 to +175
Notes
(1)
Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 PCB
Free air, mounted on recommended pad area
(2)
Revision: 23-Feb-16
Document Number: 89332
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR3PD, AR3PG, AR3PJ
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
1.24
1.04
0.33
44
MAX.
1.6
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
V
IF = 3.0 A
VF
1.20
10
TA = 125 °C
TA = 25 °C
(2)
Reverse current
μA
Rated VR
IR
250
T
A = 125 °C
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
Rated VR = 4.0 V, 1 MHz
Maximum reverse recovery time
122
44
140
-
ns
trr
I
Typical junction capacitance per diode
pF
CJ
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AR3PD
AR3PG
AR3PJ
UNIT
(1)
RJA
85
5
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad are; thermal resistance RJA - junction to ambient
Units mounted on PCB with 14 mm x 14 mm copper pad areas; RJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AR3PJ-M3/86A
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
H
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
AR3PJ-M3/87A
AR3PJHM3/86A (1)
AR3PJHM3/87A (1)
AR3PJHM3_A/H (1)
AR3PJHM3_A/I (1)
I
Note
(1)
AEC-Q101 qualified
Revision: 23-Feb-16
Document Number: 89332
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR3PD, AR3PG, AR3PJ
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1000
100
10
TA = 175 °C
TM = 158 °C
TA = 125 °C
TA = 25 °C
TA = 75 °C
1
TA = 25 °C
0.1
0.01
TM Measured
at the Cathode Band Terminal
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
TM - Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
4.5
100
TJ = 25 °C
f = 1.0 MHz
sig = 50 mVp-p
D = 0.5
D = 0.8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 0.3
V
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
2.5
tp
10
0
0.5
1.0
1.5
2.0
3.0
3.5
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Average Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
100
10
1
Junction-to-Ambient
TA = 175 °C
TA = 125 °C
TA = 75 °C
TA = 25 °C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 23-Feb-16
Document Number: 89332
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR3PD, AR3PG, AR3PJ
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 23-Feb-16
Document Number: 89332
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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