A12FR10
更新时间：2024-09-18 19:04:08
品牌：VISHAY
描述：Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN
概述
规格参数
数据手册A12FR10 概述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN 整流二极管
A12FR10 规格参数
| 生命周期： | Active | 零件包装代码： | DO-4 |
| 包装说明： | ROHS COMPLIANT, DO-4, 1 PIN | 针数： | 1 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.58 |
| Is Samacsys： | N | 其他特性： | FREE WHEELING DIODE |
| 应用： | GENERAL PURPOSE | 外壳连接： | ANODE |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | JEDEC-95代码： | DO-203AA |
| JESD-30 代码： | O-MUPM-D1 | 最大非重复峰值正向电流： | 280 A |
| 元件数量： | 1 | 相数： | 1 |
| 端子数量： | 1 | 最高工作温度： | 150 °C |
| 最低工作温度： | -65 °C | 最大输出电流： | 12 A |
| 封装主体材料： | METAL | 封装形状： | ROUND |
| 封装形式： | POST/STUD MOUNT | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 100 V | 表面贴装： | NO |
| 技术： | AVALANCHE | 端子形式： | SOLDER LUG |
| 端子位置： | UPPER | Base Number Matches： | 1 |
A12FR10 数据手册
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PDF下载1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
FEATURES
• Short reverse recovery time
RoHS
• Low stored charge
COMPLIANT
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant
DO-203AA (DO-4)
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRODUCT SUMMARY
• Converters
6/12/16 A
IF(AV)
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
1N3879. TO
1N3883.
1N3889. TO
1N3893.
SYMBOL
CHARACTERISTICS
6FL..
12FL..
16FL..
UNITS
IF(AV)
TC = 100 °C
6 (1)
9.5
12 (1)
6
9.5
110
115
60
12
19
16
25
A
A
IF(RMS)
19
145
150 (1)
103
94
50 Hz
60 Hz
50 Hz
60 Hz
72
145
180
190
160
150
2290
IFSM
A
75 (1)
26
150
103
I2t
A2s
23
55
94
I2√t
VRRM
trr
363
856
1452
1452
50 to 1000
I2√s
V
Range
Range
50 to 400 (1)
See Recovery Characteristics table
- 65 to 150
ns
°C
TJ
Note
(1)
JEDEC registered values
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
I
RRM MAXIMUM
AT TJ = 25 °C
µA
I
RRM MAXIMUM
IRRM MAXIMUM
AT TJ = 150 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
AT TJ = 100 °C
mA
50
100
200
300
400
50
75
150
250
350
450
75
1N3879.
1N3880.
1N3881.
1N3882.
-
-
15 (1)
1.0 (1)
3.0 (1)
1N3883.
1N3889.
1N3890.
1N3891.
100
200
300
400
50
150
250
350
450
75
25 (1)
3.0 (1)
5.0 (1)
1N3892.
1N3893.
5
10
20
40
60
80
100
100
200
400
600
800
1000
150
275
500
725
950
1250
6FL..
12FL..
16FL..
50
-
6.0
Note
(1)
JEDEC registered values
FORWARD CONDUCTION
1N3889.
1N3879.
1N3883.
PARAMETER
SYMBOL
TEST CONDITIONS
6FL.. 1N3893. 16FL.. UNITS
12FL..
6 (1)
100
9.5
12 (1)
100
19
6
16
100
25
A
Maximum average forward current
at case temperature
180° conduction, half sine wave
DC
IF(AV)
100
9.5
130
135
110
115
86
°C
Maximum RMS current
IF(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
85
90
72
170
180
145
215
225
180
190
230
210
160
150
2290
1.4
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal
half wave,
initial
75 (1)
36
150 (1)
145
No voltage
reapplied
TJ = 150 °C
33
26
78
130
103
94
Maximum I2t for fusing
I2t
A2s
60
100 % VRRM
reapplied
23
55
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
TJ = 25 °C; IF = Rated IF(AV) (DC)
363
856
1.4
1.5
1452
A2√s
V
1.4 (1)
1.5 (1)
1.4 (1)
1.5 (1)
Maximum forward voltage drop
VFM
T
C = 100 °C; IFM = π x rated IF(AV)
1.5
V
Note
(1)
JEDEC registered values
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
RECOVERY CHARACTERISTICS
6FL..
12FL..
16FL..
1N3879. 1N3889.
1N3883. 1N3893.
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
S02
S05
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/µs
150
300 (1)
4 (1)
150
300 (1)
5 (1)
-
-
IFM
Maximum reverse
recovery time
trr
IRM(REC)
Qrr
ns
-
trr
TJ = 25 °C, dIF/dt = 25 A/µs,
200
500
I
FM = π x rated IF(AV)
t
dir
dt
Qrr
Maximum peak
recovery current
IFM = π x rated IF(AV)
-
IRM(REC)
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/µs
400
350
-
-
-
-
Maximum reverse
recovery charge
nC
TJ = 25 °C, dIF/dt = 25 A/µs,
400
400
I
FM = π x rated IF(AV)
Note
(1)
JEDEC registered values
THERMAL AND MECHANICAL SPECIFICATIONS
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
PARAMETER
SYMBOL
TEST CONDITIONS
16FL..
UNITS
Maximum junction operating
temperature range
TJ
- 65 to 150
- 65 to 175
2.0
°C
Maximum storage temperature range
TStg
RthJC
Maximum thermal resistance,
junction to case
DC operation
2.5
1.6
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth,
flat and greased
RthCS
0.5
1.5 + 0 - 10 %
(13)
Not lubricated threads
Lubricated threads
N · m
(lbf · in)
Allowable mounting torque
1.2 + 0 - 10 %
(10)
7
g
Approximate weight
Case style
0.25
oz.
JEDEC
DO-203AA (DO-4)
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
ΔRthJC CONDUCTION
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
16FL..
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
120°
60°
0.58
0.60
1.28
2.20
0.46
0.48
1.02
1.76
0.37
0.39
0.82
1.41
0.33
0.58
1.28
2.20
0.26
0.46
1.02
1.76
0.21
0.37
0.82
1.41
TJ = 150 °C
K/W
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3879 and 6FL Series
Fig. 3 - Average Forward Current vs.
Maximum Allowable Case Temperature, 16FL Series
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3889 and 12FL Series
Fig. 4 - Reverse Recovery Time Test Waveform
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3879 and 6FL Series
Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 1N3879 and 6FL Series
Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3889 and 12FL Series
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 1N3889 and 12FL Series
Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series
Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
6
Document Number: 93138
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Fig. 11 - Maximum Forward Voltage vs. Forward Current,
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current,
1N3879 and 6FL Series
1N3889 and 12FL Series
Fig. 12 - Maximum High Level Forward Power Loss vs.
Average Forward Current,
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
16FL Series
1N3879 and 6FL Series
Fig. 13 - Maximum Forward Voltage vs. Forward Current,
1N3889 and 12FL Series
Fig. 16 - Maximum High Level Forward Power Loss vs.
Average Forward Current,
16FL Series
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Fig. 17a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series ...S02
Fig. 18b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series ...S05
Fig. 17b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series ...S02
Fig. 19a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series ...S10
Fig. 18a - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, All Series ...S05
Fig. 19b - Typical Recovered Charge vs.
Rate of Fall of Forward Current, All Series ...S10
www.vishay.com
8
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Fig. 20 - Maximum Non-Repetitive Surge Current vs.
Fig. 22 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N3889 and 12FL Series
Number of Current Pulses, 1N3879 Series
Fig. 21 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 6FL Series
Fig. 23 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 16FL Series
Fig. 24 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration, All Series
Document Number: 93138
Revision: 26-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
16
F
L
R
60
M
S02
1
2
3
4
5
6
7
1
2
3
-
-
-
Current code I(AVG) = Exact current rating
F = Diode
Omit = Standard recovery diode
L = Only for fast diode
4
-
Omit = Stud forward polarity
R = Stud reverse polarity
5
6
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
Outlines:
Omit = Stud base UNF thread
M = Stud base metric thread
7
-
trr code only for fast diode (see Recovery Characteristics table)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95311
www.vishay.com
10
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
Revision: 26-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
A12FR10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| A12FR100 | INFINEON | STANDARD RECOVERY DIODES | 获取价格 |
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| A12FR100 | VISHAY | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN | 获取价格 |
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| A12FR100M | INFINEON | STANDARD RECOVERY DIODES | 获取价格 |
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| A12FR100M | VISHAY | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN | 获取价格 |
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| A12FR10M | INFINEON | STANDARD RECOVERY DIODES | 获取价格 |
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| A12FR10M | VISHAY | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN | 获取价格 |
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| A12FR120 | INFINEON | STANDARD RECOVERY DIODES | 获取价格 |
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| A12FR120M | INFINEON | STANDARD RECOVERY DIODES | 获取价格 |
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| A12FR20 | INFINEON | STANDARD RECOVERY DIODES | 获取价格 |
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| A12FR20 | VISHAY | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN | 获取价格 |
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