8EWF10STRL [VISHAY]
Surface Mountable Fast Soft Recovery Diode, 8 A; 表面贴装快速软恢复二极管，一个8
| 型号： | 8EWF10STRL |
| 厂家： | 
VISHAY |
| 描述： | Surface Mountable Fast Soft Recovery Diode, 8 A |
| 文件： | 总8页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
FEATURES/DESCRIPTION
Base
common
cathode
+
The 8EWF..SPbF fast soft recovery rectifier
series has been optimized for combined short
reverse recovery time, low forward voltage drop
and low leakage current.
Available
RoHS*
2
COMPLIANT
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
1
3
-
-
D-PAK
Anode
Anode
This series is designed and qualified for industrial level and
lead (Pb)-free.
APPLICATIONS
PRODUCT SUMMARY
• Output rectification and freewheeling diode in inverters,
choppers and converters
VF at 8 A
< 1.3 V
80 ns
trr
VRRM
1000/1200 V
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
CHARACTERISTICS
VALUES
UNITS
Sinusoidal waveform
8
1000/1200
170
A
V
A
8 A, TJ = 25 °C
1 A, 100 A/µs
Range
1.3
V
trr
80
ns
°C
TJ
- 40 to 150
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
8EWF10SPbF
8EWF12SPbF
1000
1200
1100
1300
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
8
UNITS
Maximum average forward current
IF(AV)
TC = 94 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
170
A
Maximum peak one cycle
non-repetitive surge current
IFSM
200
144
Maximum I2t for fusing
I2t
A2s
200
Maximum I2√t for fusing
I2√t
2000
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94109
Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
8EWF..SPbF Soft Recovery Series
Surface Mountable
Fast Soft Recovery Diode, 8 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8 A, TJ = 25 °C
VALUES
1.3
UNITS
V
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
25.6
0.93
0.1
mΩ
V
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
4
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
270
4.2
1
IF at 8 Apk
trr
ta tb
Irr
Qrr
S
A
25 A/µs
TJ = 25 °C
t
di
dt
µC
Qrr
Irr
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
50
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
(1)
RthJA
Soldering temperature
Approximate weight
Marking device
TS
For 10 seconds
240
1
°C
g
0.03
oz.
Case style D-PAK (TO-252AA)
8EWF12S
Note
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
(1)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94109
Revision: 08-Jul-08
8EWF..SPbF Soft Recovery Series
Surface Mountable
Fast Soft Recovery Diode, 8 A
Vishay High Power Products
150
140
130
120
110
100
90
18
DC
8EWF.. S Series
RthJC (DC) = 2.5 °C/W
16
14
12
10
8
180°
120°
90°
60°
30°
Ø
Conduction angle
RMS limit
6
Ø
30°
3
Conduction period
80
4
120°
60°
5
8EWF..S Series
70
2
TJ = 150 °C
90°
6
180°
60
0
0
1
2
4
7
8
9
0
2
4
6
8
10
12
14
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
180
170
160
150
140
130
120
110
100
90
150
140
130
120
110
100
90
At any rated load condition and with
rated VRRM applied following surge.
8EWF..S Series
RthJC (DC) = 2.5 °C/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
60°
80
90°
8EWF..S Series
70
120°
DC
180°
10
80
60
1
10
100
0
2
4
6
8
12
14
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
12
10
8
200
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
190
180
170
160
150
140
130
120
110
100
90
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
6
Ø
4
Conduction angle
2
8EWF..S Series
TJ = 150 °C
8EWF..S Series
0
80
0.01
0
1
2
3
4
5
6
7
8
9
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94109
Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
8EWF..SPbF Soft Recovery Series
Surface Mountable
Fast Soft Recovery Diode, 8 A
Vishay High Power Products
2.0
1000
8EWF..S Series
TJ = 25 °C
IFM = 10 A
TJ = 25 °C
1.6
1.2
0.8
0.4
0
TJ = 150 °C
100
IFM = 8 A
IFM = 5 A
10
IFM = 2 A
IFM = 1 A
8EWF..S Series
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
5
8EWF..S Series
TJ = 150 °C
8EWF..S Series
TJ = 25 °C
IFM = 10 A
4
IFM = 10 A
I
FM = 8 A
IFM = 5 A
FM = 2 A
FM = 1 A
IFM = 8 A
3
2
1
0
I
I
IFM = 5 A
IFM = 2 A
IFM = 1 A
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.8
20
8EWF..S Series
TJ = 25 °C
8EWF..S Series
TJ = 150 °C
IFM = 10 A
16
12
8
IFM = 10 A
FM = 8 A
FM = 5 A
0.6
0.4
0.2
0
I
I
IFM = 8 A
IFM = 2 A
IFM = 1 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
4
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94109
Revision: 08-Jul-08
8EWF..SPbF Soft Recovery Series
Surface Mountable
Fast Soft Recovery Diode, 8 A
Vishay High Power Products
25
8EWF..S Series
TJ = 150 °C
20
15
10
5
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
8EWF..S Series
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94109
Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
8EWF..SPbF Soft Recovery Series
Surface Mountable
Fast Soft Recovery Diode, 8 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
8
E
W
F
12
S
TR PbF
1
2
3
4
5
6
7
8
1
2
-
-
Current rating (8 = 8 A)
Circuit configuration:
E = Single diode
Package:
3
4
-
-
W = D-PAK
Type of silicon:
F = Fast soft recovery rectifier
Voltage code x 100 = VRRM
S = Surface mountable
TR = Tape and reel
10 = 1000 V
12 = 1200 V
5
6
7
-
-
-
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
None = Standard production
PbF = Lead (Pb)-free
8
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95016
Part marking information
Packaging information
http://www.vishay.com/doc?95059
http://www.vishay.com/doc?95033
www.vishay.com
6
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94109
Revision: 08-Jul-08
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
(6.74)
M
C A B
b3
0.010
MIN.
c2
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
(6.23)
B
MIN.
Seating
plane
D1
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
(2) L5
Detail “C”
A
0.06
(1.524)
b
MIN.
c
b2
C A B
0.010
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
Lead tip
(7)
C
Gauge
plane
C
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
(7)
(8)
Dimension b1 and c1 applied to base metal only
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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1
相关型号：
8EWF12SPBF
Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, DPAK-3
VISHAY
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