85EPF12J [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, POWIRTAB-1;
| 型号： | 85EPF12J |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, POWIRTAB-1 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总8页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2153 rev. D 12/02
QUIETIR Series
85EPF..HV
FAST SOFT RECOVERY
RECTIFIER DIODE
IF(RMS) = 160A
VF
trr
< 1.4V @ 100A
= 95ns
VRRM 800to1200V
Description/ Features
Major Ratings and Characteristics
The 85EPF.. fast soft recovery QUIETIRrectifier series
has been optimized for combined short reverse recovery
Characteristics
85EPF.. Units
time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling
conditions.
AvailableinthenewPowIRtabTM package,thisnewseries
is suitable for a large range of applications combining
I
Rect.Conduction
50%dutyCycle
@ TC = 85°C
85
A
F(AV)
I
160
800to1200
1100
A
V
F(RMS)
excellent die to footprint ratio and sturdeness connectivity
for use in high current environments.
V
I
range(*)
RRM
A
FSM
Typical applications are both:
V
@100A,T =25°C
J
1.4
V
Output rectification and freewheeling in
inverters, choppers and converters
Input rectifications where severe
F
t
@1A,-100A/µs
range
95
ns
°C
rr
T
-40to150
J
restrictions on conducted EMI should be met.
Case Styles
85EPF..
85EPF..J
(*) for higher voltage up to 1600V contact factory
Document Number: 93159
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1
85EPF.. HV QUIETIR Series
Bulletin I2153 rev. D 12/02
Voltage Ratings
VRRM , maximum
peakreversevoltage
V
VRSM, maximum non repetitive
IRRM
150°C
mA
peakreversevoltage
V
Part Number
85EPF08
85EPF10
800
900
1000
1100
15
85EPF12
1200
1300
Absolute Maximum Ratings
Parameters
85EPF..
85
Units
A
Conditions
IF(AV) Max.AverageForwardCurrent
@TC=85°C,180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
1100
1250
5000
7000
70000
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
A
I2t
Max.I2tforfusing
A2s
I2√t Max.I2√tforfusing
A2√s
Electrical Specifications
Parameters
85EPF..
1.36
Units
V
Conditions
VFM Max. ForwardVoltageDrop
@ 85A, TJ = 25°C
rt
Forwardsloperesistance
4.03
0.87
0.1
mΩ
TJ = 150°C
VF(TO) Thresholdvoltage
V
IRM Max.ReverseLeakageCurrent
TJ = 25 °C
mA
VR = rated VRRM
15
TJ = 150 °C
Recovery Characteristics
Parameters
85EPF.. Units
Conditions
IF @ 85Apk
@ 25A/ µs
trr
Reverse Recovery Time
ReverseRecoveryCurrent
ReverseRecoveryCharge
SnapFactor
480
7.1
2.1
0.5
ns
A
Irr
Qrr
S
µC
@25°C
Document Number: 93159
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2
85EPF.. HV QUIETIR Series
Bulletin I2153 rev. D 12/02
Thermal-Mechanical Specifications
Parameters
85EPF.. Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
0.35
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W
DCoperation
RthJA Max.ThermalResistanceJunction
toAmbient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance,Caseto
Heatsink
0.2
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
PowIRtabTM
150
150
85EPF.. Se rie s
85EPF.. Se rie s
R
(DC) = 0.35 K/ W
R
(DC) = 0.35 K/ W
thJC
thJC
140
130
120
110
100
90
140
130
120
110
100
90
Co nd uc tio n Ang le
Co nd uc tio n Pe rio d
180°
120°
90°
DC
80
80
90°
180°
30°
40
30°
60°
60°
120°
70
70
0
20
60
80 100 120 140
0
10 20 30 40 50 60 70 80 90
Ave ra g e Forwa rd Curre nt (A)
Ave ra g e Forwa rd Curre nt (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
200
180
160
140
120
100
80
160
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
C o nd u c tio n Pe rio d
C o nd uc tio n Ang le
85EPF.. Se rie s
60
40
40
85EPF.. Se rie s
20
T
= 150°C
J
T
= 150°C
20
J
0
0
0
10 20 30 40 50 60 70 80 90
Ave ra g e Forwa rd Curre nt (A)
0
20
40
60
80 100 120 140
Ave ra g e Forwa rd Curre nt (A)
Fig.4-ForwardPowerLossCharacteristics
Fig.3-ForwardPowerLossCharacteristics
Document Number: 93159
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3
85EPF.. HV QUIETIR Series
Bulletin I2153 rev. D 12/02
1200
1400
1300
1200
1100
1000
900
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n.
At Any Ra te d Lo a d Condition And With
Ra te d V
Ap plie d Following Surge .
Initia l T = 150°C
1100
1000
900
800
700
600
500
400
300
RRM
Initia l T = 150°C
J
No Volta g e Re a pp lie d
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Ra te d V
Re a p p lie d
RRM
800
700
600
500
85EPF.. Se rie s
85EPF.. Se rie s
400
300
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Num b e r O f Eq ua l Am p litud e Ha lf C yc le C urre nt Pulse s (N)
Fig.5-MaximumNon-RepetitiveSurgeCurrent
Fig.6-MaximumNon-RepetitiveSurgeCurrent
1000
100
10
T
= 25°C
J
T
= 150°C
J
85EPF.. Se rie s
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Insta nta ne ous Forwa rd Volta g e (V)
Fig.7-ForwardVoltageDropCharacteristics
0.22
0.2
0.6
85EPF.. Se rie s
= 150°C
I
= 125 A
FM
T
J
0.5
80 A
0.18
0.16
0.14
0.12
0.1
I
= 80 A
FM
40 A
0.4
40 A
20 A
0.3
20 A
10 A
10 A
0.2
0.08
0.06
0.04
1 A
0.1
1 A
85EPF.. Se rie s
T
= 25°C
J
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te Of Fa ll Of Forwa rd Curre nt - d i/ d t (A/µs)
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Fig.8-RecoveryTimeCharacteristics,TJ=25°C
Fig.9-RecoveryTimeCharacteristics,TJ=150°C
Document Number: 93159
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4
85EPF.. HV QUIETIR Series
Bulletin I2153 rev. D 12/02
4
3.5
3
14
85EPF.. Se rie s
= 25°C
I
= 125 A
85EPF.. Se rie s
= 150°C
I
= 80 A
FM
FM
T
T
J
12
10
8
J
80 A
40 A
20 A
2.5
2
40 A
6
20 A
10 A
1.5
1
10 A
1 A
4
2
0.5
0
1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Fig.10-RecoveryChargeCharacteristics,TJ=25°C
Fig.11-RecoveryChargeCharacteristics,TJ=150°C
45
22
I
= 125 A
I
= 80 A
FM
FM
85EPF.. Se rie s
= 25°C
85EPF.. Se rie s
= 150°C
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
T
T
J
J
80 A
40 A
40 A
20 A
20 A
10 A
10 A
6
1 A
4
1 A
2
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Ra te Of Fa ll Of Forwa rd Curre nt - d i/d t (A/µs)
Fig.12-RecoveryCurrentCharacteristics,TJ=25°C
Fig.13-RecoveryCurrentCharacteristics,TJ=150°C
1
Ste a d y Sta te Va lue
(DC Ope ra tion)
D = 0.50
D = 0.33
0.1
D = 0.25
D = 0.17
D = 0.08
Single Pulse
85EPF.. Se rie s
0.01
0.0001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig.14-ThermalImpedanceZthJCCharacteristics
Document Number: 93159
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5
85EPF.. HV QUIETIR Series
Bulletin I2153 rev. D 12/02
Outline Table
Case Style PowIRtabTM
Dimensions in millimeters and (inches)
CaseStyle PowIRtabTM"J"version
Dimensions in millimeters and (inches)
Document Number: 93159
www.vishay.com
6
85EPF.. HV QUIETIR Series
Bulletin I2153 rev. D 12/02
Ordering Information Table
Device Code
BaseCathode
85
E
P
F
12
J
2
1
2
3
4
5
6
1
2
-
-
CurrentRating
CircuitConfiguration:
E = Single Diode
Package:
Anode
1
3
Anode
3
4
-
-
P = TO-247AC
Type of Silicon:
F = Fast Recovery
08 = 800V
5
-
-
Voltage code: Code x 100 = V
none=PowIRtabTMstandard
(*)
10 = 1000V
12 = 1200V
RRM
6
65
J
= ShortLeadVersion6
(*) for higher voltage up to 1600V contact factory
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
12/02
Document Number: 93159
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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