6N137-X007 [VISHAY]
High Speed Optocoupler, 10 Mbd; 高速光耦, 10万桶型号: | 6N137-X007 |
厂家: | VISHAY |
描述: | High Speed Optocoupler, 10 Mbd |
文件: | 总12页 (文件大小:660K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
• Choice of CMR performance of 10 kV/µs,
5 kV/µs, and 100 V/µs
• High speed: 10 Mbd typical
e3
Dual channel
Single channel
• + 5 V CMOS compatibility
• Guaranteed AC and DC performance over tem-
perature: - 40 to + 100 °C Temp. Range
1
2
3
4
8
7
6
5
A1
C1
C2
A2
V
CC
V
O1
V
O2
GND
1
2
3
4
8
V
NC
CC
7
A
V
E
6
5
V
O
GND
C
• Pure tin leads
NC
• Meets IEC60068-2-42 (SO ) and
2
6N137, VO2601, VO2611
VO2630, VO2631, VO4661
IEC60068-2-43 (H S) requirements
18921_5
2
• Low input current capability: 5 mA
• Lead (Pb)-free component
open collector Schottky clamped transistor output.
The VO2630, VO2631 and VO4661 are dual channel
10MBd optocouplers. For the single channel type, an
enable function on pin 7 allows the detector to be
strobed. The internal shield provides a guaranteed
common mode transient immunity of 5 kV/µs for the
VO2601 and VO2631 and 10 kV/µs for the VO2611
and VO4661. The use of a 0.1 µF bypass capacitor
connected between pin 5 and 8 is recommended.
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CUL - File No. E52744, equivalent to CSA bulletin
5A
• DIN EN 60747-5-2 (VDE0884)
Order Information
• Reinforced insulation rating per IEC60950
2.10.5.1
• VDE available with Option 1
Part
Remarks
6N137
100 V/µs, Single channel, DIP-8
100 V/µs, Single channel, DIP-8 400 mil
100 V/µs, Single channel, SMD-8
5 kV/µs, Single channel, DIP-8
5 kV/µs, Single channel, DIP-8 400 mil
5 kV/µs, Single channel, SMD-8
10 kV/µs, Single channel, DIP-8
10 kV/µs, Single channel, DIP-8 400 mil
10 kV/µs, Single channel, SMD-8
100 V/µs, Dual channel, DIP-8
100 V/µs, Dual channel, DIP-8 400 mil
100 V/µs, Dual channel, SMD-8
5 kV/µs, Dual channel, DIP-8
6N137-X006
6N137-X007
VO2601
Applications
Microprocessor System Interface
PLC, ATE input/output isolation
Computer peripheral interface
Digital Fieldbus Isolation: CC-Link, DeviceNet,
Profibus, SDS
High speed A/D and D/A conversion
AC Plasma Display Panel Level Shifting
Multiplexed Data Transmission
Digital control power supply
VO2601-X006
VO2601-X007
VO2611
VO2611-X006
VO2611-X007
VO2630
VO2630-X006
VO2630-X007
VO2631
Ground loop elimination
VO2631-X006
VO2631-X007
VO4661
5 kV/µs, Dual channel, DIP-8 400 mil
5 kV/µs, Dual channel, SMD-8
Description
10 kV/µs, Dual channel, DIP-8
The 6N137, VO2601 and VO2611 are single channel
10 Mbd optocouplers utilizing a high efficient input
LED coupled with an integrated optical photodiode IC
detector. The detector has an open drain NMOS-tran-
sistor output, providing less leakage compared to an
VO4661-X006
VO4661-X007
10 kV/µs, Dual channel, DIP-8 400 mil
10 kV/µs, Dual channel, SMD-8
Document Number 84732
Rev. 1.0, 07-Jun-05
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1
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Truth Table (Positive Logic)
LED
ENABLE
OUTPUT
ON
H
H
L
H
H
H
L
OFF
ON
L
OFF
ON
L
NC
NC
OFF
H
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Average forward current1)
Test condition
Symbol
IF
Value
Unit
mA
20
Average forward current2)
Reverse input voltage
IF
VR
VE
IE
15
mA
V
5
Enable input voltage1)
Enable input current1)
Surge current
VCC + 0.5 V
V
5
mA
mA
t = 100 µs
IFSM
200
1) Package: Single DIP-8
2) Package: Dual DIP-8
Output
Parameter
Test condition
1 minute max.
Symbol
Value
Unit
Supply voltage
VCC
7
V
Output current
Output voltage
IO
50
7
mA
V
VO
PO
PO
Output power dissipation1)
Output power dissipation2)
1) Package: Single DIP-8
2) Package: Dual DIP-8
85
60
mW
mW
Coupler
Parameter
Test condition
Symbol
Tstg
Value
Unit
°C
Storage temperature
- 55 to + 150
Operating temperature
Tamb
- 40 to + 100
260
°C
°C
Lead solder temperature1)
Solder reflow temperature2)
Isolation test voltage
for 10 sec.
for 1 minute
t = 1.0 sec.
260
°C
VISO
5300
VRMS
1) Package: DIP-8 through hole
2) Package: DIP-8 SMD
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Document Number 84732
Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Recommended Operating Conditions
Parameter
Test condition
Symbol
Tamb
Min
- 40
Typ.
Max
100
Unit
°C
Operating temperature
Supply voltage
VCC
IFL
4.5
0
5.5
250
15
V
µA
mA
V
Input current low level
Input current high level
Logic high enable voltage
Logic low enable voltage
Output pull up resistor
Fanout
IFH
VEH
VEL
RL
5
2.0
0.0
330
VCC
0.8
4 K
5
V
Ω
RL = 1 kΩ
N
-
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 10 mA
R = 5.0 V
Symbol
Min
1.1
Typ.
1.4
Max
1.7
Unit
Input forward voltage
VF
V
Reverse current
V
IR
0.01
55
10
µA
Input capacitance
f = 1 MHz, VF = 0 V
CI
pF
Output
Parameter
Test condition
Symbol
ICCH
Min
Typ.
4.1
Max
7.0
Unit
mA
High level supply
current (single
channel)
V
V
E = 0.5 V, IF = 0 mA
E = VCC, IF = 0 mA
ICCH
ICCH
3.3
6.9
6.0
mA
mA
High level supply
current (dual
channel)
IF = 0 mA
12.0
Low level supply
current (single
channel)
V
E = 0.5 V, IF = 10 mA,
ICCL
4.0
7.0
mA
V
E = VCC, IF = 10 mA
ICCL
ICCL
3.3
6.5
6.0
mA
mA
Low level supply
current (dual
channel)
IF = 10 mA
12.0
High level output
current
V
E = 2.0 V, VO = 5.5 V, IF = 250 µA
IOH
0.002
0.2
1
µA
Low level output
voltage
VE = 2.0 V, IF = 5 mA,
VOL
0.6
V
IOL (sinking) = 13 mA
Input treshold
current
V
E = 2.0 V, VO = 5.5 V,
ITH
2.4
5.0
mA
IOL (sinking) = 13 mA
High level enable
current
VE = 2.0 V
IEH
IEL
- 0.6
- 0.8
- 1.6
- 1.6
mA
mA
V
Low level enable
current
VE = 0.5 V
High level enable
voltage
VEH
VEL
2.0
Low level enable
voltage
0.8
V
Document Number 84732
Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified.
All Typicals at Ta = 25 °C, VCC = 5 V.
Parameter
Test condition
Symbol
tPLH
Min
20
Typ.
48
Max
75*
Unit
ns
Propagation delay time to high RL = 350 Ω, CL = 15 pF
output level
tPLH
tPHL
100
75*
ns
ns
Propagation delay time to low
output level
RL = 350 Ω, CL = 15 pF
25
50
tPHL
100
35
ns
ns
ns
ns
ns
ns
Pulse width distortion
RL = 350 Ω, CL = 15 pF
RL = 350 Ω, CL = 15 pF
RL = 350 Ω, CL = 15 pF
RL = 350 Ω, CL = 15 pF
| tPHL - tPLH
|
2.9
8
Propagation delay skew
Output rise time (10 - 90 %)
Output fall time (90 - 10 %)
tPSK
tr
40
23
7
tf
Propagation delay time of
enable from VEH to VEL
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tELH
12
Propagation delay time of
enable from VEL to VEH
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tEHL
11
ns
* 75 ns applies to the 6N137 only, a JEDEC registered specification
V
CC
Single Channel
Pulse Gen.
= 50 Ω
f
V
1
2
3
4
CC 8
R
L
Z
t
o
= 7.5 mA
F
I
F
I
I
V
E
= t = 5 ns
r
= 3.75 mA
Input I
7
6
5
F
F
0.1 µF
Bypass
0 mA
Output V
Monitoring
Node
V
OUT
O
Input I
Monitoring
F
V
OH
Output V
O
1.5 V
OL
Node
R
V
C
= 15 pF
M
L
GND
t
PHL
t
PLH
The Probe and Jig Capacitances are included in C
L
18964-2
Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
Pulse Gen.
Z
t
= 50 Ω
r
o
f
V
CC
= t = 5 ns
Dual Channel
I
F
V
1
2
3
4
8
7
6
5
CC
R
L
Output V
O
Input
Monitoring
Monitoring
Node
R
Node
0.1 µF
Bypass
= 15 pF
C
M
L
GND
18963-2
Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
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Document Number 84732
Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Input V
Monitoring Node
Pulse Gen.
E
V
CC
Z
t
= 50 Ω
= t = 5 ns
r
o
f
Single Channel
V
R
1
2
3
4
CC
8
7
6
5
L
3 V
V
E
7.5 mA
Output V
Monitoring
Node
O
1.5 V
Input V
E
0.1 µF
Bypass
I
F
t
EHL
V
OUT
t
ELH
C
= 15 pF
Output V
L
O
1.5 V
GND
The Probe and Jig Capacitances are included in C
L
18975-2
Figure 3. Single Channel Test Circuit for tEHL and tELH
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
100
Typ.
Max
Unit
Common mode
transient immunity
(high)
|VCM| = 10 V, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1)
| CMH
|
V/µs
|VCM| = 50 V, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2)
| CMH
| CMH
|
|
5000
10000
100
10000
15000
V/µs
V/µs
V/µs
V/µs
V/µs
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 3)
|VCM| = 10 V, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 1)
|VCM| = 50 V, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 2)
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 3)
| CML |
| CML |
| CML |
5000
10000
10000
15000
1) For 6N137 and VO2630
2) For VO2601 and VO2631
3) For VO2611 and VO4661
V
CC
I
Single Channel
V
F
(PEAK)
V
R
CM
1
2
3
4
CC 8
L
V
CM
0 V
B
A
V
E
Output V
Monitoring
Node
O
=
Switch AT A:I
0 mA
7
6
5
F
0.1 µF
Bypass
V
OUT
CM
V
5 V
H
O
)
(min.
V
V
O
FF
=
Switch AT A:
7.5 mA
I
F
(max.)
V
O
GND
CM
V
O
V
0.5
L
V
-
CM
+
Pulse Generator
= 50 Ω
18976-2
Z
O
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
Document Number 84732
Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
I
F
Dual Channel
B
+ 5 V
V
8
7
6
5
1
2
3
4
CC
A
R
L
Output V
O
Monitoring
Node
0.1 µF
Bypass
V
FF
GND
V
CM
+
-
Pulse Generator
= 50 Ω
18977-1
Z
O
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Climatic Classification (according to
IEC 68 part 1)
55/110/21
Comparative Tracking Index
CTI
175
399
VIOTM
8000
V
V
VIORM
PSO
ISI
630
500
300
175
mW
mA
°C
TSI
Creepage
Clearance
Creepage
Clearance
standard DIP-8
standard DIP-8
400mil DIP-8
400mil DIP-8
7
7
mm
mm
mm
mm
mm
8
8
Insulation thickness, reinforced rated per IEC60950 2.10.5.1
0.2
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Document Number 84732
Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4.0
1.7
3.5
I
F
= 50 mA
1.6
1.5
1.4
1.3
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 20 mA
V
= 7 V
= 10 mA
F
CC
V
= 5 V
= 10 mA
CC
I
F
I
F
I
= 10 mA
F
I
= 1 mA
40
F
–40 –20
0
20
40
60
80 100
–40 –20
T
0
20
60
80 100
17614
T
amb
– Ambient Temperature ( C )
17610
– Ambient Temperature ( °C )
amb
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 9. Low Level Supply Current vs. Ambient Temperature
3.5
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
V
CC
= 7 V
3.4
3.3
3.2
3.1
3.0
2.9
2.8
I
F
= 0.25 mA
V
CC
= 5 V
I
F
= 0.25 mA
–40 –20
0
20
40
60
80 100
0
5
10 15 20 25 30 35 40 45 50
– Forward Current ( mA )
17615
T
amb
– Ambient Temperature ( C )
17611
I
F
Figure 7. Forward Voltage vs. Forward Current
Figure 10. High Level Supply Current vs. Ambient Temperature
7
6
5
4
3
2
1
0
2.8
2.7
2.6
R
L
= 350
2.5
2.4
2.3
2.2
2.1
R
= 4 k
L
R
= 1 k
L
–40 –20
T
0
20
40
60
80 100
–40 –20
0
20
40
60
80 100
17613-1
– Ambient Temperature ( C )
17616
T
amb
– Ambient Temperature ( C )
amb
Figure 8. Reverse Current vs. Ambient Temperature
Figure 11. Input Threshold ON Current vs. Ambient Temperature
Document Number 84732
Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
2.6
50
45
40
35
30
25
20
15
10
5
2.5
2.4
2.3
2.2
2.1
2.0
R
L
= 350
R
= 4 k
L
R
L
= 1 k
0
–40 –20
0
20
40
60
80 100
–40 –20
0
20
40
60
80 100
17617
T
amb
– Ambient Temperature ( C )
17620
T
amb
– Ambient Temperature ( C )
Figure 12. Input Threshold OFF Current vs. Ambient Temperature
Figure 15. High Level Output Current vs. Ambient Temperature
0.30
V
CC
= 5.5 V
I
= 16 mA
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
L
I
= 5 mA
F
I
= 13 mA
0.25
0.20
0.15
0.10
0.05
0.00
L
I
= 10 mA
= 6 mA
L
I
L
R
3
= 350 W
L
1.5
1.0
0.5
0.0
R
L
= 1 kW
R
L
= 4 kW
–40 –20
T
0
20
40
60
80 100
17618
– Ambient Temperature ( C )
0
1
2
4
5
amb
17621
I
F
– Forward Input Current ( mA )
Figure 13. Low Level Output Voltage vs. Ambient Temperature
Figure 16. Output Voltage vs. Forward Input Current
60
120
t
4 kΩ
PLH,
I
= 5 mA
= 10 mA
F
50
40
30
20
10
0
I
F
100
80
60
40
20
0
t
1 kΩ
PLH,
t
350 Ω
350 Ω
PLH,
t
PHL,
t
1 kΩ
PHL,
t
4 kΩ
PHL,
–40 –20
0
20
40
60
80 100
–40 –20
T
0
20
40
60
80 100
17619
T
amb
– Ambient Temperature ( _C )
17622
– Ambient Temperature ( °C )
amb
Figure 14. Low Level Output Current vs. Ambient Temperature
Figure 17. Propagation Delay vs. Ambient Temperature
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Document Number 84732
Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
120
100
80
60
40
20
0
300
t
4 kΩ
PLH,
t , R = 4 kΩ
r
L
250
200
150
100
50
t
1 kΩ
PLH,
t
350 Ω
PLH,
t , R = 350 Ω
f
L
t , R = 1 kΩ
f
L
t , R = 4 kΩ
t
350 Ω
f
L
PHL,
t , R = 1 kΩ
r
L
t
1 kΩ
PHL,
t
4 kΩ
PHL,
t , R = 350 Ω
r
L
0
5
7
9
11
13
15
–40 –20
T
0
20
40
60
80 100
17623
I
– Forward Current ( mA )
17626
– Ambient Temperature ( °C )
amb
F
Figure 18. Propagation Delay vs. Forward Current
Figure 21. Rise and Fall Time vs. Ambient Temperature
50
300
t , R = 4 kΩ
r
L
R
= 4 kΩ
L
40
30
20
10
0
250
200
150
100
50
t , R = 350 Ω
f
L
R
L
= 1 kΩ
t , R = 1 kΩ
f
L
t , R = 4 kΩ
f
L
t , R = 1 kΩ
r
L
R
L
= 350 Ω
t , R = 350 Ω
r
L
0
–40 –20
0
20
40
60
80 100
5
7
9
11
13
15
17624
T
amb
– Ambient Temperature ( °C )
17627
I – Forward Current ( mA )
F
Figure 19. Pulse Width Distortion vs. Ambient Temperature
Figure 22. Rise and Fall Time vs. Forward Current
60
50
60
50
R
R
= 4 kΩ
= 1 kΩ
L
t
= 4 kΩ
eLH
40
30
20
10
0
40
30
20
10
0
t
= 350 Ω
eLH
t
= 350 Ω
L
eHL
t
= 1 kΩ
eLH
R
L
= 350 Ω
t
= 1 kΩ
eHL
t
= 4 kΩ
eHL
5
7
9
11
13
15
–40 –20
T
0
20
40
60
80 100
17625
I – Forward Current ( mA )
F
17628
– Ambient Temperature ( °C )
amb
Figure 20. Pulse Width Distortion vs. Forward Current
Figure 23. Enable Propagation Delay vs. Ambient Temperature
Document Number 84732
Rev. 1.0, 07-Jun-05
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6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
5
3
1
2
7
.255 (6.48)
.268 (6.81)
6
8
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Option 7
Option 6
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.331 (8.4)
MIN.
.400 (10.16)
.430 (10.92)
.406 (10.3)
MAX.
18450-1
www.vishay.com
10
Document Number 84732
Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84732
Rev. 1.0, 07-Jun-05
www.vishay.com
11
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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