4N33-X007 [VISHAY]
Optocoupler with Photodarlington Output; 光电耦合器与光电复合输出
| 型号： | 4N33-X007 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Photodarlington Output |
| 文件： | 总7页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4N32/ 4N33
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
• Very high current transfer ratio, 500 % Min.
• High isolation resistance, 1011 Ω Typical
• Standard plastic DIP package
• Lead-free component
1
6
A
C
B
C
E
5
4
2
3
NC
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
i179005
e3
Pb-free
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Order Information
Part
Remarks
4N32
CTR > 500 %, DIP-6
CTR > 500 %, DIP-6
• BSI IEC60950 IEC60065
4N33
4N32-X007
4N32-X009
4N33-X007
4N33-X009
CTR > 500 %, SMD-6 (option 7)
CTR > 500 %, SMD-6 (option 9)
CTR > 500 %, SMD-6 (option 7)
CTR > 500 %, SMD-6 (option 9)
Description
The 4N32 and 4N33 are optically coupled isolators
with a gallium arsenide infrared LED and a solicon
photodarlington sensor.
For additional information on the available options refer to
Option Information.
Switching can be achieved while maintaining a high
degree of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high
speed switching and elimination of magnetic fields.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
3.0
Unit
V
Peak reverse voltage
V
R
Forward continuous current
Power dissipation
I
60
mA
mW
F
P
100
1.33
diss
Derate linearly
from 55 °C
mW/°C
Document Number 83736
Rev. 1.4, 26-Jan-05
www.vishay.com
1
4N32/ 4N33
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Value
30
Unit
V
Collector-emitter breakdown voltage
BV
BV
BV
BV
I
CEO
EBO
CBO
ECO
C
Emitter-base breakdown voltage
Collector-base breakdown voltage
Emitter-collector breakdown voltage
Collector (load) current
8.0
50
V
V
5.0
125
150
2.0
V
mA
mW
mW/°C
Power dissipation
P
diss
Derate linearly
Coupler
Parameter
Test condition
Symbol
Value
250
Unit
mW
Total dissipation
P
tot
Derate linearly
3.3
mW/°
Isolation test voltage (between
emitter and detector, Standard
Climate: 23 °C/ 50 %RH, \\nDIN
500 14)
V
5300
V
RMS
ISO
Leakage Path
Air Path
7.0
7.0
mm min.
mm min.
Ω
12
Isolation Resistance
V
V
= 500 V, T
= 500 V, T
= 25 °C
R
IO
IO
amb
amb
IO
IO
≥ 10
11
= 100 °C
R
Ω
°C
°C
s
≥ 10
Storange temperature
Operating temperature
Lead soldering time
T
- 55 to + 150
- 55 to + 100
10
amb
T
stg
at 260 °C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
= 50 mA
Symbol
Min
Typ.
1.25
Max
1.5
Unit
V
Forward voltage
I
V
I
F
F
Reverse current
Capacitance
V
V
= 3.0 V
= 0 V
0.1
25
100
µ
R
R
R
C
pF
O
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2
Document Number 83736
Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Min
30
Typ.
Max
Unit
V
Collector-emitter breakdown
I
I
I
I
= 100 µA, I = 0
BV
C
C
C
C
F
CEO
1)
voltage
Collector-base breakdown
= 100 µA, I = 0
BV
50
8.0
5.0
V
V
F
CBO
1)
voltage
Emitter-base breakdown
= 100 µA, I = 0
BV
F
EBO
1)
voltage
Emitter-collector breakdown
= 100 µA, I = 0
BV
10
V
F
ECO
1)
voltage
Collector-emitter leakage
current
V
= 10 V, I = 0
I
CEO
1.0
100
nA
CE
F
I
= 0.5 mA, V = 5.0 V
h
FE
13
C
CE
1)
Indicates JEDEC registered values
Coupler
Parameter
Test condition
Symbol
Min
Typ.
1.0
Max
Max
Unit
V
Colector emitter saturation
voltage
V
CEsat
Coupling capacitance
1.5
pF
Current Transfer Ratio
Parameter
Test condition
= 10 V, I = 10 mA,
Symbol
CTR
Min
500
Typ.
Unit
%
Current Transfer Ratio
V
CE
F
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
Max
5.0
Unit
Turn on time
Turn off time
V
= 10 V, I 50 mA
t
µs
CC
C =
on
I
= 200 mA, R = 180 Ω
t
100
µs
F
L
off
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
Normalized to:
Vce = 5 V
Normalized to:
Ta = 25°C
Vce = 5 V
Vce = 1V
IF = 10 mA
Vce = 5 V
IF = 10 mA
Ta = 25°C
Vce = 5 V
Vce =1V
.1
.01
.001
.1
1
10
100
1000
100
.1
1
10
IF - LED Current - mA
IF - LED Current - mA
i4n32-33_02
i4n32-33_03
Figure 1. Normalized Non-saturated and Saturated CTR vs.
Figure 2. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current
CE
LED Current
Document Number 83736
Rev. 1.4, 26-Jan-05
www.vishay.com
3
4N32/ 4N33
Vishay Semiconductors
10
20
15
Normalized to:
Ta = 25°C
1kΩ
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
Vcb = 3.5 V
IF = 10 mA
1
10
.1
100Ω
5
.01
0
.001
0
5
10
15
20
.1
1
10
100
IF - LED Current - mA
IF - LED Current - mA
i4n32-33_04
i4n32-33_07
Figure 3. Normalized Collector-Base Photocurrent vs. LED
Current
Figure 6. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
10000
Ta = 25°C
Vce = 5 V
8000
6000
I
F
V
CC
R
L
t
R
D
4000
V
O
t
V
O
Vce = 1 V
t
PLH
2000
I
F
V
=1.5 V
TH
0
.01
t
F
t
t
S
PHL
.1
1
10
100
Ib - Base Current - µA
i4n32-33_05
i4n32-33_08
Figure 4. Non-Saturated and Saturated HFE vs. Base Current
Figure 7. Switching Waveform and Switching Schematic
80
Ta = 25°C, Vcc = 5V
1.0 kΩ
Vth = 1.5 V
60
220 ıΩˇ
40
470 Ω
20
100 Ω
0
0
5
10
15
20
IF - LED Current - mA
i4n32-33_06
Figure 5. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
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4
Document Number 83736
Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors
Package Dimensions in Inches (mm)
For 4N32/33..... see DIL300-6 Package dimension in the Package Section.
For products with an option designator (e.g. 4N32-X007 or 4N33-X009)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
14770
DIP-6 Package Dimensions
pin one ID
2
5
1
6
3
4
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
Document Number 83736
Rev. 1.4, 26-Jan-05
www.vishay.com
5
4N32/ 4N33
Vishay Semiconductors
Option 7
Option 9
.300 (7.62)
TYP.
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.331 (8.4)
MIN.
15° max.
18494
.315 (8.00)
min.
.406 (10.3)
MAX.
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6
Document Number 83736
Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83736
Rev. 1.4, 26-Jan-05
www.vishay.com
7
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