4N25GVSERIES [VISHAY]
Optocoupler with Phototransistor Output ; 光电耦合器与光电晶体管输出\n
| 型号： | 4N25GVSERIES |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Phototransistor Output
|
| 文件： | 总9页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The 4N25(G)V/ 4N35(G)V series consists of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
14827
For appl. class I – IV at mains voltage ≤ 300 V
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
B
6
C
5
E
4
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
1
3
2
A (+) C (–) n.c.
VDE 0884
Optocoupler for electrical safety requirements
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
)
RMS
VDE 0804
Telecommunication
processing
apparatus
and
data
IEC 65
Safety for mains-operated electronic and related
household apparatus
Order Instruction
Ordering Code
CTR Ranking
Remarks
1)
4N25V/ 4N25GV
4N35V/ 4N35GV
>20%
>100%
1)
1)
G = Leadform 10.16 mm; G is not market on the body
86
Rev. A4, 11–Jan–99
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Features
Approvals:
Rated recurring peak voltage (repetitive)
V
= 600 V
IORM
RMS
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
FIMKO (SETI): EN 60950,
Certificate number 12399
Thickness through insulation ≥ 0.75 mm
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
General features:
Isolation materials according to UL94-VO
VDE 0884, Certificate number 94778
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
VDE 0884 related features:
Climatic classification 55/100/21 (IEC 68 part 1)
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
Isolation test voltage
(partial discharge test voltage) V = 1.6 kV
pd
Low temperature coefficient of CTR
Coupling System A
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
(848 V peak)
RMS
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
5
60
3
100
125
Unit
V
mA
A
mW
°C
V
R
I
F
t ≤ 10 s
I
p
FSM
T
amb
≤ 25°C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Test Conditions
Symbol
Value
32
7
Unit
V
V
mA
mA
mW
°C
V
V
CEO
CEO
I
C
50
t /T = 0.5, t ≤ 10 ms
I
100
150
125
p
p
CM
T
amb
≤ 25°C
P
V
T
j
Junction temperature
Coupler
Parameter
Test Conditions
t = 1 min
≤ 25°C
Symbol
Value
3.75
250
Unit
kV
mW
°C
°C
°C
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
V
IO
P
tot
T
amb
T
–55 to +100
–55 to +125
260
amb
T
stg
2 mm from case, t ≤ 10 s
T
sd
Rev. A4, 11–Jan–99
87
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
I = 50 mA
Symbol
Min.
Typ.
1.2
Max.
1.4
Unit
V
V
F
F
T
amb
= 100°C
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
Output (Detector)
Parameter
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector emitter cut-off
current
Test Conditions
Symbol
Min.
32
7
Typ.
Max.
Unit
V
V
V
V
C
CEO
ECO
CEO
I = 100 A
E
V
CE
= 10 V, I = 0,
I
I
50
nA
F
T
= 100°C
amb
V
CE
= 30 V, I = 0,
500
A
F
CEO
T
amb
= 100°C
Coupler
Parameter
Collector emitter
saturation voltage
Test Conditions
Symbol
V
CEsat
Min.
Typ.
Max.
0.3
Unit
V
I = 50 mA, I = 2 mA
F
C
Cut-off frequency
V
= 5 V, I = 10 mA,
f
c
110
1
kHz
pF
CE
F
R = 100
f = 1 MHz
L
Coupling capacitance
C
k
Current Transfer Ratio (CTR)
Parameter
I /I
Test Conditions
Type
Symbol
CTR
CTR
Min.
0.20
1.00
0.40
Typ.
1
1.5
Max.
Unit
V
= 10 V, I = 10 mA 4N25(G)V
C F
CE
F
4N35(G)V
V
CE
= 10 V, I = 10 mA, 4N35(G)V
CTR
F
T
amb
= 100°C
88
Rev. A4, 11–Jan–99
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Value
130
Unit
mA
I
si
Output (Detector)
Parameters
Power dissipation
Test Conditions
≤ 25°C
Symbol
Value
265
Unit
mW
T
amb
P
si
Coupler
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
Value
6
150
Unit
kV
V
IOTM
T
si
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge test voltage – 100%, t
Routine test
Test Conditions
= 1 s
Symbol
V
pd
Min.
1.6
Typ.
Max.
Unit
kV
test
Partial discharge test voltage – t = 60 s, t
= 10 s,
V
IOTM
6
1.3
kV
kV
Tr
test
Lot test (sample test)
(see figure 2)
V
pd
12
Insulation resistance
V
V
T
amb
= 500 V
= 500 V,
= 100°C
R
R
10
IO
IO
11
10
IO
IO
9
V
IO
= 500 V,
R
IO
10
T
= 150°C
amb
(construction test only)
V
IOTM
300
250
200
150
100
V
t , t = 1 to 10 s
1 2
t , t = 1 s
3 4
Phototransistor
Psi ( mW )
t
= 10 s
= 12 s
test
t
stres
V
Pd
V
V
IOWM
IORM
IR-Diode
Isi ( mA )
50
0
0
t
t
t
3 test 4
150
0
25
50
75
100
125
t
= 60 s
t
t
t
Tr
1
2
stres
13930
94 9182
T – Safety Temperature ( °C )
si
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Rev. A4, 11–Jan–99
89
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Switching Characteristics of 4N25(G)V
Parameter
Delay time
Test Conditions
V = 5 V, I = 5 mA, R = 100 (see figure 3)
Symbol
Typ.
4.0
Unit
s
t
d
S
C
L
Rise time
t
r
7.0
s
Fall time
t
f
6.7
s
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
t
0.3
11.0
7.0
25.0
42.5
s
s
s
s
s
t
on
off
on
off
t
t
t
V = 5 V, I = 10 mA, R = 1 k (see figure 4)
S
F
L
s
Switching Characteristics of 4N35(G)V
Parameter
Delay time
Test Conditions
V = 5 V, I = 2 mA, R = 100 (see figure 3)
Symbol
Typ.
2.5
Unit
s
t
d
S
C
L
Rise time
t
r
3.0
s
Fall time
t
f
4.2
s
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
t
0.3
s
s
s
s
s
t
<10.0
<10.0
9.0
on
off
on
off
t
t
t
V = 5 V, I = 10 mA, R = 1 k (see figure 4)
S
F
L
25.0
s
I
F
I
F
+ 5 V
0
I
C
= 5 mA/ 2 mA;
96 11698
Adjusted through
input amplitude
R
G
= 50
I
F
tp
0.01
T
0
t = 50
p
s
t
t
p
Channel I
Oscilloscope
I
C
Channel II
R
C
≥ 1 M
≤ 20 pF
L
L
100%
90%
50
100
14950
Figure 3. Test circuit, non-saturated operation
+ 5 V
I
F
I = 10 mA
F
10%
0
0
I
C
t
t
r
R
= 50
G
tp
t
d
t
s
t
f
0.01
T
t = 50
p
s
t
on
t
off
Channel I
Channel II
t
pulse dura-
t
t
t
storage time
fall time
turn-off time
Oscilloscope
p
s
tion
f
t
t
t
delay time
rise time
turn-on time
(= t + t )
d
off
s
f
R ≥ 1 M
L
50
1 k
r
C ≤ 20 pF
L
(= t + t )
on
d
r
95 10844
Figure 4. Test circuit, saturated operation
Figure 5. Switching times
90
Rev. A4, 11–Jan–99
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
300
250
200
150
100
50
10000
1000
100
10
Coupled device
V
I =0
F
=10V
CE
Phototransistor
IR-diode
0
1
0
40
80
120
0
10 20 30 40 50 60 70 80 90 100
96 11700
T
amb
– Ambient Temperature (
96 11875
T
amb
– Ambient Temperature ( °C
°
Figure 6. Total Power Dissipation vs.
Ambient Temperature
Figure 9. Collector Dark Current vs.
Ambient Temperature
1000.0
1.000
0.100
0.010
0.001
V
CB
=10V
100.0
10.0
1.0
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
I – Forward Current ( mA )
100
96 11862
V – Forward Voltage ( V )
F
96 11876
F
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Collector Base Current vs. Forward Current
1.5
100.00
V
=10V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
CE
V
CE
=10V
I =10mA
F
10.00
1.00
0.10
0.01
–30 –20 –10 0 10 20 30 40 50 60 70 80
0.1
1.0
10.0
100.0
96 11874
T
amb
– Ambient Temperature ( °C
96 11904
I – Forward Current ( mA )
F
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 11. Collector Current vs. Forward Current
Rev. A4, 11–Jan–99
91
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
1000
100
10
100.0
I =50mA
F
20mA
V
CE
=20V
10.0
1.0
10mA
5mA
2mA
1mA
0.1
1
100
0.1
1.0
10.0
100.0
0.1
1
10
96 11905
V
– Collector Emitter Voltage ( V
95 10976
I – Forward Current ( mA )
CE
F
Figure 12. Collector Current vs. Collector Emitter Voltage
Figure 15. Current Transfer Ratio vs. Forward Current
1.0
50
Saturated Operation
V =5V
R =1k
L
0.8
40
30
S
20%
0.6
CTR=50%
t
t
off
0.4
20
10
0
0.2
10%
on
0
100
20
1
10
0
5
10
15
95 10972
I
– Collector Current ( mA )
95 10974
I – Forward Current ( mA )
F
C
Figure 13. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 16. Turn on / off Time vs. Forward Current
1000
800
20
Non Saturated
Operation
V =10V
S
15
R =100
L
V
CE
=10V
600
t
off
5V
10
5
t
on
400
200
0
0
100
10
0.01
0.1
1
10
0
2
4
6
8
95 10973
I
– Collector Current ( mA )
95 10975
I – Collector Current ( mA )
C
C
Figure 14. DC Current Gain vs. Collector Current
Figure 17. Turn on / off Time vs. Collector Current
92
Rev. A4, 11–Jan–99
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Type
XXXXXX
Date
Code
(YM)
Production
Location
918 A TK 63
V
0884
D
E
Safety
Logo
15090
Coupling
System
Company
Logo
Indicator
Figure 18. Marking example
Dimensions of 4N25G/ 4N35G in mm
weight: ca. 0.50 g
creepage distance:
air path: 8 mm
8 mm
after mounting on PC board
14771
Rev. A4, 11–Jan–99
93
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Dimensions of 4N25/ 4N35 in mm
weight: 0.50 g
creepage distance:
air path: 6 mm
6 mm
after mounting on PC board
14770
94
Rev. A4, 11–Jan–99
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