3N25x-E4 [VISHAY]
Glass Passivated Single-Phase Bridge Rectifier;
| 型号： | 3N25x-E4 |
| 厂家： | 
VISHAY |
| 描述： | Glass Passivated Single-Phase Bridge Rectifier |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2KBPxxM-E4, 3N25x-E4
Vishay General Semiconductor
www.vishay.com
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
−
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
~
+
+
~
~
−
Case Style KBPM
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
PRIMARY CHARACTERISTICS
Package
KBPM
2.0 A
IF(AV)
MECHANICAL DATA
VRRM
IFSM
50 V to 1000 V
60 A
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
IR
5 μA
VF at IF = 3.14 A
TJ max.
1.1 V
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
165 °C
In-line
Diode variations
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
PARAMETER
SYMBOL
UNIT
3N253
3N254
3N255
3N256
3N257
3N258
3N259
Maximum repetitive peak reverse
voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
420
600
560
800
700
V
V
Maximum DC blocking voltage
100
1000
Maximum average forward output
rectified current at TA = 55 °C
IF(AV)
2.0
60
A
A
Peak forward surge current single half
sine-wave superimposed on rated
load
IFSM
Rating for fusing (t < 8.3 ms)
I2t
15
A2s
°C
Operating junction and storage
temperature range
TJ, TSTG
-55 to +165
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
TEST
CONDITIONS
PARAMETER
SYMBOL
UNIT
3N253
3N254
3N255
3N256
3N257
3N258
3N259
Maximum instantaneous
forward voltage drop per
diode
VF
3.14 A
1.1
V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
5.0
IR
μA
pF
TA = 125 °C
500
Typical junction
capacitance per diode
4.0 V,
1 MHz
TJ
25
Revision: 05-Aug-15
Document Number: 88532
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2KBPxxM-E4, 3N25x-E4
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
2KBP005M 2KBP01M
2KBP02M
2KBP04M
3N256
30
2KBP06M
3N257
2KBP08M
3N258
2KBP10M
3N259
PARAMETER
SYMBOL
UNIT
3N253
3N254
3N255
(1)
RJA
Typical thermal resistance
°C/W
(1)
RJL
11
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
2KBP06M-E4/51
3N257-E4/51
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Anti-static PVC tray
Anti-static PVC tray
1.895
51
51
600
600
1.895
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
2.0
100
60 Hz Resistive or
Inductive Load
1.5
10
PCB Mounted
with 0.47 x 0.47"
(12 x 12 mm)
1.0
Copper Pads
1
Capacitive Load
0.5
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
I(pk)
0.1
5.0
10
20
=
I(AV)
(Per Leg)
0
0.01
20
40
60
80
100
120
140
160170
0
0.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
60
50
40
30
20
10
0
100
TJ = 150 °C
Single Sine-Wave
TJ = 125 °C
TJ = 100 °C
10
1
0.1
TJ = 25 °C
60
1.0 Cycle
0.01
1
10
100
0
20
40
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent
Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 05-Aug-15
Document Number: 88532
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2KBPxxM-E4, 3N25x-E4
Vishay General Semiconductor
www.vishay.com
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.125 x 45°
(3.2)
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
0.50 (12.7) MIN.
MIN.
0.060
(1.52)
0.034 (0.86)
0.028 (0.76)
DIA.
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
0.200 (5.08)
0.180 (4.57)
Polarity shown on front side of case: positive lead by beveled corner
Revision: 05-Aug-15
Document Number: 88532
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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